公开(公告)号：EP1360143B1

公开(公告)日：2005-11-16

申请号：EP02708202.3

申请日：2002-02-04

Applicant: ROBERT BOSCH GMBH

Inventor： FISCHER, Frank ,  FREY, Wilhelm ,  METZGER, Lars

IPC: B81B3/00

CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81C1/00619 ,  B81C2201/0112 ,  G01P15/0802 ,  G01P2015/0814

Abstract: The invention relates to a method for producing surface micromechanical structures having a high aspect ratio. At least one sacrificial layer (20) is provided between a substrate (30) and a functional layer (10). Trenches (60, 61) are provided in said functional layer (10) by means of a plasma etching process, said trenches uncovering at least some surface areas (21, 22) of the sacrificial layer (20). According to the invention, a further layer (70) is deposited at least partially on the lateral walls of the trenches, but not on the uncovered surface areas (21, 22) of the sacrificial layer (20), in order to increase the aspect ratio of said trenches. The invention also relates to a sensor, especially an acceleration or rotational rate sensor.

公开(公告)号：EP1464078A1

公开(公告)日：2004-10-06

申请号：EP02806334.5

申请日：2002-12-31

Applicant: ALCATEL

Inventor： PUECH, Michel ,  VAN DER DRIFT, Emile;DELFT Institute of M&S(DIMES) ,  ZILSTRA, Tony; DELFT Institute of M&S (DIMES) ,  BLAUW, Michiel; DELFT Institute of M&S (DIMES)

IPC: H01L21/3065 ,  H01L21/308 ,  B81B1/00 ,  B81C1/00

CPC classification number: B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085

Abstract: The invention concerns a method which consists in: plasma etching treatment of a substrate (2) contained in a chamber (1) whereof the atmosphere (5) is maintained at low pressure by a vacuum-generating device (6, 7). Plasma-generating means (8) generate a plasma (9) which acts on the surface (2a) of the substrate (2). The etching method consists in subjecting the substrate (2) to an alternating succession of steps comprising: a plasma etching step with etching gas derived from an etching gas source (19), a second plasma passivation step with passivating gas derived from a passivating gas source (20), followed by a selective plasma pulsed depassivation step by the action of a cleaning plasma gas derived from a cleaning plasma gas source (21) which removes the polymer in the base zone of the cavities (2b) more efficiently than the etching gas, thereby enabling formation of cavities (2b) having an aspect ratio higher than 30, with increased speed, and good selectivity with respect to the mask protecting the substrate (2).

公开(公告)号：EP0625285B1

公开(公告)日：2000-03-22

申请号：EP94900729.8

申请日：1993-11-27

Applicant: ROBERT BOSCH GMBH

Inventor： LAERMER, Franz ,  SCHILP, Andrea

IPC: H01L21/306 ,  H01L21/308

CPC classification number: H01L21/3085 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/30655 ,  Y10T428/24521

Abstract: The invention concerns a method for the anisotropic etching of features defined by an etching mask, preferably recesses with precisely defined sides in silicon, produced using a plasma etching technique. The invention calls for the etched features to have an extremely high degree of anisotropy while ensuring high mask selectivity. This is achieved by carrying out the anisotropic etching procedure in separate polymerization and etching steps which alternate with each other.

公开(公告)号：EP0983610A1

公开(公告)日：2000-03-08

申请号：EP99909091.3

申请日：1999-03-16

Applicant: Surface Technology Systems Limited

Inventor： MCQUARRIE, Andrew, Duncan

IPC: H01L21/3065

CPC classification number: B01J19/088 ,  B01J7/00 ,  B01J12/00 ,  B01J12/002 ,  B01J12/007 ,  B01J19/24 ,  B01J19/2445 ,  B01J19/245 ,  B01J2219/00038 ,  B01J2219/0004 ,  B01J2219/00058 ,  B01J2219/00162 ,  B01J2219/0807 ,  B01J2219/0809 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0883 ,  B01J2219/0894 ,  B81C1/00515 ,  B81C2201/0112 ,  B81C2201/0132 ,  C01B7/24 ,  C07C17/00 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081

Abstract: There is disclosed a method of manufacturing a micromechanical device. The method comprises the steps of: (a) etching a substrate (1), having a mask (2) thereon, through an opening in the mask to a desired depth to form a trench (6) having a side wall (4) and a base (5) in the substrate (1); (b) depositing a layer of a protecting substance (7) on the exposed surfaces of the substrate and mask; (c) selectively removing the protecting substance (7) from the base (5); and (d) etching the base (5) using a fluorine-containing etchant. Also disclosed is a micromechanical device formed by the method and an apparatus for manufacturing the micromechanical device.

公开(公告)号：KR101360876B1

公开(公告)日：2014-02-11

申请号：KR1020127000165

申请日：2010-05-24

Applicant: 어플라이드 머티어리얼스, 인코포레이티드

Inventor： 체셔,알란

IPC: C23F4/04 ,  H01L21/3065

CPC classification number: B81C1/00531 ,  B81C2201/0112 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/30655

Abstract: 본 발명의 실시예들은 기판 식각 방법 및 장치에 관한 것이다. 일 실시예에서, 플라즈마 식각 반응기 내에서 기판을 식각하는 방법이 제공되는 바, 이 방법은, a) 식각 반응기 내에서 기판 상에 폴리머를 증착하는 단계; b) 식각 반응기 내에서 불소-함유 가스(fluorine-containing gas) 및 산소를 포함하는 가스 혼합물을 이용하여 기판을 식각하는 단계; c) 식각 반응기 내에서 산소를 혼합하지 않으면서 불소-함유 가스를 이용하여 기판 상에 배치된 실리콘-함유층을 식각하는 단계; 및 d) 실리콘-함유층 내로 식각되는 피쳐(feature)의 종료점(endpoint)에 이를 때 까지, a), b) 및 c) 단계를 반복하는 단계를 포함한다.

公开(公告)号：KR100857629B1

公开(公告)日：2008-09-08

申请号：KR1020077007838

申请日：2005-10-04

Applicant: 실버브룩 리서치 피티와이 리미티드

Inventor： 맥레이놀드대럴라루 ,  실버브룩키아

IPC: H01L21/3065 ,  H01L27/00

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: 실리콘 웨이퍼 내의 에칭된 트렌치의 측벽으로부터 폴리머 코팅을 제거하는 방법이 제공된다. 상기 방법은 바이어스 플라즈마 에칭 챔버에서 O
2 플라즈마를 사용하여 웨이퍼를 에칭하는 것을 포함한다. 상기 챔버 온도는 90~180℃ 범위이다.

公开(公告)号：JP5443937B2

公开(公告)日：2014-03-19

申请号：JP2009238802

申请日：2009-10-16

Applicant: Sppテクノロジーズ株式会社

Inventor： 彰一 村上 ,  晶保 畑下

IPC: H01L21/3065 ,  B81C1/00

CPC classification number: H01L21/30655 ,  B81C1/00063 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/3083

公开(公告)号：JPWO2011093258A1

公开(公告)日：2013-06-06

申请号：JP2011551844

申请日：2011-01-25

Applicant: 株式会社アルバック

Inventor： 学 吉居 ,  学 吉居 ,  一弘 渡邉 ,  一弘 渡邉

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  B81C1/00087 ,  B81C2201/0112 ,  H01L21/3065

Abstract: ドライエッチング方法は、第1の工程と第2の工程とを含む。第1の工程は、酸化ガスとフッ素含有ガスとを含む混合ガスから第1のプラズマを生成し、シリコン層(Ls)に第1のプラズマによる異方性エッチングを施してシリコン層(Ls)に凹部を形成することを含む。第2の工程は、第2のプラズマにより凹部の内表面に有機膜を堆積する有機膜形成処理と、有機膜に覆われた凹部に第1のプラズマによる異方性エッチングを施すエッチング処理とを交互に繰り返すことを含む。第1の工程で形成される凹部の底面の一部にエッチングストッパ層(Lo)が露出されたとき、第1の工程から第2の工程への切り替えが行われる。

公开(公告)号：JP4638499B2

公开(公告)日：2011-02-23

申请号：JP2007534963

申请日：2005-10-04

Applicant: シルバーブルック リサーチ ピーティワイ リミテッド

Inventor： カイア シルバーブルック， ,  ダレル， ラルー マックレイノルズ，

IPC: B41J2/16

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

公开(公告)号：JP4576122B2

公开(公告)日：2010-11-04

申请号：JP2003560972

申请日：2002-12-31

Applicant: アルカテル−ルーセント

Inventor： ジルストラ，トニー ,  ピユーシユ，ミシエル ,  フアン・デル・ドリフト，エミール ,  ブラウ，ミヘル

IPC: H01L21/3065 ,  B81C99/00 ,  H01L21/308

CPC classification number: B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085