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    BRIGHT AND DURABLE FIELD EMISSION SOURCE DERIVED FROM REFRACTORY TAYLOR CONES
    42.
    发明公开
    BRIGHT AND DURABLE FIELD EMISSION SOURCE DERIVED FROM REFRACTORY TAYLOR CONES 审中-公开
    HELLE UND DAUERHAFTE FELDEMISSIONSQUELLE AUS FEUERFESTEN TAYLOR-KEGELN

    公开(公告)号：EP3066680A1

    公开(公告)日：2016-09-14

    申请号：EP14860789.8

    申请日：2014-11-07

    Applicant: HIRSCH, Gregory

    Inventor： HIRSCH, Gregory

    IPC: H01J49/04

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2237/06341 ,  H01J2237/0805

    Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    Abstract translation: 一种具有改善的亮度和耐久性的场致发射体的方法，其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部，同时在材料上施加高的正电位。 随后通过停止激光功率使得到的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却有利于快速淬火，导致具有与原始液体泰勒锥体的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

    DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME
    45.
    发明公开
    DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    DIAMANTELEKTRONENQUELLE UND DEREN HERSTELLUNGSVERFAHREN

    公开(公告)号：EP2065915A1

    公开(公告)日：2009-06-03

    申请号：EP07807459.8

    申请日：2007-09-18

    Applicant: Sumitomo Electric Industries, Ltd.

    Inventor： UEDA, Akihiko ,  YAMAMOTO, Yoshiyuki ,  NISHIBAYASHI, Yoshiki ,  IMAI, Takahiro

    IPC: H01J9/02 ,  H01J1/304

    CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

    Abstract: A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source.
    One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.

    Abstract translation: 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 研磨柱状金刚石单晶10的一端，形成平坦的平坦面11，在平滑平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

    전자 소스
    46.
    发明公开
    전자 소스 审中-公开
    电子来源

    公开(公告)号：KR20180031061A

    公开(公告)日：2018-03-27

    申请号：KR20187007328

    申请日：2016-08-12

    Applicant: KLA TENCOR CORP

    Inventor： CHUANG YUNG HO ALEX ,  XIAOLI YINYING ,  LIU XUEFENG ,  FIELDEN JOHN

    IPC: H01J1/304 ,  H01J9/02

    CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

    Abstract: 전자소스가대향하는제 1 및제 2 표면을갖는실리콘기판상에형성된다. 전자방출을향상시키기위해적어도하나의전계이미터가실리콘기판의제 2 표면상에준비된다. 실리콘의산화를방지하기위해, 얇고연속적인붕소층이산화및 결함을최소화하는공정을사용하여전계이미터의출력표면상에직접적으로배치된다. 전계이미터는피라미드및 둥근위스커와같은다양한형상을취할수 있다. 방출전류의빠르고정확한제어및 높은방출전류를달성하기위해하나또는여러개의선택적게이트층들이전계이미터팁의높이에또는그보다약간낮게배치될수 있다. 전계이미터는 p 형도핑될수 있고역 바이어스모드에서작동하도록구성될수 있거나, 전계이미터는 n 형도핑될수 있다.

    Abstract translation: 它被形成具有第一表面到第二mitje电子源计数器在硅衬底上。 至少一个仪表jeongyeyi在硅衬底的第二表面上而制备，以增强电子发射。 为了防止硅的氧化，使用最小化它直接布置在jeongyeyi米的输出表面上的薄的连续层氧化钛和硼的缺陷的方法。 字段具有已经chwihalsu多种形状，如金字塔形发射器和卷曲晶须。 为了实现一个或几个选择性的栅极层，发射电流的快速而精确的控制和高的发射电流可以略低于的尖端jeongyeyi微米或更小的高度被设置。 Jeongyeyi计来掺杂p型和任一被配置在反向偏置模式下操作，jeongyeyi计可以是掺杂的n型。

    전계방출표시소자의 제조방법
    47.
    发明公开
    전계방출표시소자의 제조방법 无效
    现场排放显示器制造方法

    公开(公告)号：KR1020000002650A

    公开(公告)日：2000-01-15

    申请号：KR1019980023500

    申请日：1998-06-22

    Applicant: 오리온전기 주식회사

    Inventor： 정복현

    IPC: H05B33/00

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30411 ,  H01J2201/30449

    Abstract: PURPOSE: A method of field emission display manufacture is provided to extend the area of the display and to drive the display using low voltage. CONSTITUTION: A method of field emission display manufacture comprises the steps of: forming a pile up structure of a first and a second insulating films having a gate hole onto the substrate(11) with a cathode metal(13); decreasing the size of the gate hole by depositing a gate metal using a vertical depositing method; and forming a metal tip(25) inside the gate hole.

    Abstract translation: 目的：提供一种场致发射显示器制造方法，以扩展显示器的面积，并以低电压驱动显示器。 构成：场发射显示器制造方法包括以下步骤：用阴极金属（13）将具有栅极孔的第一和第二绝缘膜的堆积结构形成在衬底（11）上; 通过使用垂直沉积方法沉积栅极金属来减小栅极孔的尺寸; 以及在门孔内部形成金属尖端（25）。

    전도성 나노구조물 및 이의 성형 방법 및 이를 이용하는 전계 방출 에미터의 제조 방법
    48.
    发明公开
    전도성 나노구조물 및 이의 성형 방법 및 이를 이용하는 전계 방출 에미터의 제조 방법 有权
    导电性纳米结构及其形成方法和使用其制造场致发射体的方法

    公开(公告)号：KR1020110137571A

    公开(公告)日：2011-12-23

    申请号：KR1020100057576

    申请日：2010-06-17

    Applicant: 서울대학교산학협력단

    Inventor： 김용협 ,  김왈준

    IPC: H01B1/04 ,  H01B1/02 ,  H01J1/30

    CPC classification number: H01J9/025 ,  B23H9/00 ,  H01B1/04 ,  H01B1/08 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2201/30434 ,  H01J2201/30449 ,  H01J2201/30469

    Abstract: PURPOSE: A conductive nano-structure, a method for molding the same, and a method for manufacturing an electric field emitting emitter using the same are provided to precisely control the size and the shape of the conductive nano-structure based on an electric-discharge processing method under an atmospheric environment. CONSTITUTION: A conductive nano-structure aligned on a conductive substrate is formed(110). The conductive nano-structure is discharge-processed under an atmospheric environment(120). A method for manufacturing an electric field emitting emitter includes the following: The conductive nano-structure including carbon nano-tubes is formed and is arranged on a conductive tip. The conductive nano-structure is discharge-cut under the atmospheric environment. Contact resistance between the conductive tip and the conductive nano-structure is reduced.

    Abstract translation: 目的：提供导电性纳米结构体及其成型方法以及使用该导电性纳米结构体的电场发射发射体的制造方法，以基于放电来精确地控制导电性纳米结构体的尺寸和形状 大气环境下的加工方法。 构成：形成在导电基板上排列的导电纳米结构（110）。 导电纳米结构在大气环境下进行放电处理（120）。 一种制造电场发射发射器的方法包括：形成包括碳纳米管的导电纳米结构并布置在导电尖端上。 导电纳米结构在大气环境下进行放电切割。 导电尖端和导电纳米结构之间的接触电阻降低。

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