Abstract:
The present invention relates to an electronic device, the electronic device comprising at least one LED, a driving unit for applying a driving algorithm for driving the LED during normal operation, and a measurement unit for determining a forward voltage of the LED by imposing a test current to the LED, the measurement unit being programmed for determining test current characteristics taking into account said driving algorithm.
Abstract:
A semiconductor device for measuring IR radiation is disclosed. It comprises a substrate and a cap enclosing a cavity, a sensor pixel in the cavity, comprising a first absorber for receiving said IR radiation, a first heater, first temperature measurement means for measuring a first temperature; a reference pixel in the same cavity, comprising a second absorber shielded from said IR radiation, a second heater, and second temperature measurement means for measuring a second temperature; a control circuit for applying a first/second power to the first/second heater such that the first temperature equals the second temperature; and an output circuit for generating an output signal indicative of the IR radiation based on a difference between the first and second power.
Abstract:
An electronic device comprising a first substrate having a device area, a first sealing element comprising an anelastic material and a second sealing element being a metal. The first sealing means and the second sealing means are arranged such that the inner side or the outer side of the sealing is completely formed by the second sealing element providing hermiticity and the other side is substantially formed by the first sealing element providing a flexible sealing.
Abstract:
A method for assisting in operating a PWM driven motor comprising for at least one phase of the PWM driven motor: generating a pulse width modulated phase voltage scheme according to a desired phase profile with a base scaling factor, by time multiplexing a first pulse and at least a further pulse within a pulse width modulation period of the phase the first pulse having a pulse width according to a first profile, for that rotor position, multiplied with a first scaling factor, the first profile being in phase with the desired phase profile, and the at least a further pulse having a pulse width corresponds with a further profile, for that rotor position, multiplied with a further scaling factor, the further profile being not in phase with the desired phase profile, whereby the first pulse and the at least one further pulse are positioned within the pulse width modulation period of the phase in at least partially non-overlapping way.
Abstract:
A semiconductor chip for measuring a magnetic field based on the Hall effect. The semiconductor chip comprises an electrically conductive well having a first conductivity type, in a substrate having a second conductivity type. The semiconductor chip comprises at least four well contacts arranged at the surface of the well, and having the first conductivity type. The semiconductor chip comprises a plurality of buffer regions interleaved with the well contacts and having the first conductivity type. The buffer regions are highly conductive and the buffer region dimensions are such that at least part of the current from a well contact transits through one of its neighboring buffer regions.
Abstract:
A magnetic field sensor structure having a number of inner, outer and intermediate electrodes, arranged in a particular manner, such that groups of four electrodes can be used to form horizontal Hall elements, whereby neighboring Hall elements “share” one of the two readout electrodes. Multiple Hall elements may be biased and readout simultaneously. A modulated or unmodulated readout-technique may be used. Integrated magnetic concentrator may be added to the structure. The number of Hall elements may be odd or even. The structure can be used e.g. to measure the magnetic field of a 2-pole, 4-pole or 6-pole ring or disk magnet.
Abstract:
An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.
Abstract:
A circuit for controlling a multiphase SRM motor, comprising for each winding a low-side and a high-side transistor, and a low-side and a high-side diode for, and at least one current sensor, e.g. a single current sensor, arranged in low-side or high-side implementation for measuring a current through a first and second winding, and a controller adapted for configuring the transistors such that: during a first time slot only the first winding is energized while the second winding is freewheeling via a selected freewheeling path, during a second time slot only the second winding is energized while the first winding is freewheeling via a selected freewheeling path, and measuring the first and second current in said time slots. A method of driving said transistors.
Abstract:
A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprises: a membrane; a first resistor connected between a first bias node and a first output node; a second resistor connected between said first bias node and a second output node; a first and second current source connected to the first resp. second output node for generating a differential voltage signal indicative of the external pressure to be measured. The resistors comprise piezo-resistive strips arranged in particular crystallographic directions. The circuit may have a third and four resistor pair for compensating package stress. The Piezo-resistive strips may be formed as p-doped regions within an n-well, the biasing node being electrically connected to the n-well.
Abstract:
A method for determining the position of a moving rotor in a switched reluctance motor includes the steps of applying a voltage to a phase winding of the reluctance motor, sampling a signal representative of the current magnitude in this phase winding, detecting a feature of the second temporal derivative of the signal, and determining the position of the moving rotor taking into account the occurrence of this feature. Apparatus for carrying out the method is described.