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公开(公告)号：KR101689663B1
公开(公告)日：2017-01-09
申请号：KR1020100091104
申请日：2010-09-16
Applicant: 삼성전자주식회사
Abstract: 양자점발광소자및 그제조방법이개시된다. 양자점발광소자는전자수송층; 상기전자수송층위에형성된것으로, 다수의나노홀을구비하는형태로패터닝된그래핀층과, 상기다수의나노홀내에형성된양자점을포함하는양자점발광층; 상기양자점발광층위에형성된정공수송층;을포함한다. 또한, 양자점발광소자제조방법은전자수송층, 정공수송층및 상기전자수송층과정공수송층사이에마련된양자점발광층을포함하는양자점발광소자제조방법에있어서, 그래핀(graphene)층을형성하는단계; 상기그래핀층에다수의나노홀을형성하는단계; 상기다수의나노홀에양자점을형성하여양자점발광층을형성하는단계;를포함한다.
Abstract translation: 目的：提供一种使用石墨烯结构的量子点发光器件，以通过使用图案化的石墨烯层选择性地形成量子点来防止诸如位错等的缺陷来提高量子效率。 构成：电子传输层（130）布置在衬底（110）上。 量子点发光层（150）布置在电子传输层上。 量子点发光层包括在石墨烯层（152）内形成的量子点（154）和多个纳米孔。 石墨烯层包括一个或多个石墨烯片。 在量子点发光层上配置空穴传输层（170）。
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公开(公告)号：KR1020160027431A
公开(公告)日：2016-03-10
申请号：KR1020140114199
申请日：2014-08-29
Applicant: 삼성전자주식회사
IPC: H01L33/20
CPC classification number: H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/38 , H01L2224/48091 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2933/0016 , H01L2933/0025 , H01L2924/00014 , H01L2924/00012
Abstract: 본발명은제1 영역과제2 영역을가지며제1 도전형반도체층으로이루어진베이스층; 상기베이스층의상면에배치되며, 제1 도전형반도체로이루어진복수의나노코어, 상기복수의나노코어상에순차적으로배치된활성층및 제2 도전형반도체층을갖는복수의나노발광구조물; 상기제2 도전형반도체층에전기적으로접속되도록상기복수의나노발광구조물의표면에배치된콘택전극; 상기베이스층과전기적으로접속된제1 전극; 및상기제2 영역에배치된복수의나노발광구조물중 적어도일부의나노발광구조물의표면에배치된상기콘택전극을덮도록배치되는제2 전극을포함하며, 상기복수의나노발광구조물중 상기제2 영역에배치된나노발광구조물은상기제1 영역에배치된나노발광구조물과상이한형상을가진나노구조반도체발광소자를제공한다.
Abstract translation: 本发明提供了一种纳米结构半导体发光器件，其包括：具有第一区域和第二区域并由第一导电型半导体层形成的基极层; 多个纳米发光结构，其设置在基底层的上表面上，并且具有由第一导电型半导体形成的多个纳米芯，依次设置在纳米芯上的有源层，以及第二导电型半导体层 ; 接触电极，其设置在与第二导电型半导体层电连接的纳米发光结构的表面上; 电连接到所述基底层的第一电极; 以及第二电极，其设置成覆盖设置在设置在第二区域中的纳米发光结构的至少一部分的表面上的接触电极，其中设置在纳米发光结构中的第二区域中的纳米发光结构具有 形状与设置在第一区域中的纳米发光结构的形状不同。
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公开(公告)号：KR1020160011286A
公开(公告)日：2016-02-01
申请号：KR1020140091930
申请日：2014-07-21
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/24 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/16245 , H01L2224/48227 , H01L2224/48237 , H01L2224/73265
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체로이루어진베이스층, 베이스층상에서로이격되어배치되며, 각각제1 도전형반도체코어, 활성층및 제2 도전형반도체층을포함하는복수의나노발광구조물들, 베이스층상에배치되어베이스층과전기적으로연결되는제1 전극, 및제2 도전형반도체층과전기적으로연결되는제2 전극을포함하고, 제1 및제2 전극중 적어도하나는하면에복수의나노발광구조물들과동일한배열을가지는제1 패턴부를갖는다.
Abstract translation: 根据本发明的实施例，半导体发光器件包括：由第一导电半导体制成的基极层; 多个发光纳米结构，其在所述基底层上彼此隔开布置，其中所述多个发光纳米结构中的每一个包括第一导电半导体芯，有源层和第二导电半导体层; 第一电极，其布置在所述基底层上并电连接到所述基底层; 以及电连接到第二导电半导体层的第二电极，其中第一和第二电极之间的至少一个具有与底表面上的多个发光纳米结构具有相同序列的第一图案部分。
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公开(公告)号：KR1020140077616A
公开(公告)日：2014-06-24
申请号：KR1020120146620
申请日：2012-12-14
Applicant: 삼성전자주식회사
CPC classification number: H01L33/08 , H01L27/156 , H01L33/24 , H01L33/387
Abstract: Disclosed is a nanostructured light emitting device. The disclosed light emitting device includes a first-type semiconductor layer; multiple nanostructures which are formed on the first-type semiconductor layer and have a nanocore, an active layer which surrounds the surface of the nanocore, and a second-type semiconductor layer; an electrode layer which surrounds the nanostructures; and multiple resistance layers which are formed on the electrode layer and include the nanostructures respectively.
Abstract translation: 公开了一种纳米结构发光器件。 所公开的发光器件包括第一型半导体层; 形成在第一型半导体层上并具有纳米孔的多个纳米结构，围绕纳米孔表面的活性层和第二类型半导体层; 围绕纳米结构的电极层; 以及形成在电极层上并分别包括纳米结构的多个电阻层。
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公开(公告)号：KR1020140058012A
公开(公告)日：2014-05-14
申请号：KR1020120124462
申请日：2012-11-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0075 , B82Y20/00 , H01L33/002 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/44 , H01L33/46 , H01L2933/0025
Abstract: A nano-structured light-emitting device is disclosed. The disclosed nano-structured light-emitting device includes a first semiconductor layer; a nano-structure which is mounted on the first semiconductor layer, includes a nano-core, an active layer on the surface of the nano-core, and a second semiconductor layer, and has a flat upper portion; a conductive layer which covers the side surface of the nano-structure; a first electrode which is electrically connected to the first semiconductor layer; and a second electrode which is electrically connected to the conductive layer.
Abstract translation: 公开了一种纳米结构的发光器件。 所公开的纳米结构发光器件包括第一半导体层; 安装在第一半导体层上的纳米结构包括纳米芯，纳米芯表面上的活性层和第二半导体层，并具有平坦的上部; 覆盖纳米结构的侧表面的导电层; 电连接到第一半导体层的第一电极; 以及电连接到导电层的第二电极。
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Patent Agency Ranking
公开(公告)号：KR101356701B1
公开(公告)日：2014-02-04
申请号：KR1020120029406
申请日：2012-03-22
Applicant: 삼성전자주식회사
Abstract: 발광소자 및 그 제조방법에 관해 개시되어 있다. 개시된 발광소자는 복수의 수직형 발광구조체와 상기 발광구조체 각각의 적어도 일부를 감싸는 보호층 및 상기 발광구조체들 사이의 공간을 메우는 절연층을 포함할 수 있다. 상기 보호층은 플라즈마의 침투를 방지(억제)하는 물질을 포함할 수 있다. 일례로, 상기 보호층은 알루미늄 산화물을 포함할 수 있다. 상기 절연층(즉, 충전 절연층)은 건식 공정으로 증착된 층일 수 있다. 상기 발광소자의 제조방법은 복수의 수직형 발광구조체를 형성하는 단계, 상기 복수의 수직형 발광구조체를 감싸는 것으로 플라즈마의 침투를 방지하는 보호층을 형성하는 단계, 상기 보호층 상에 상기 발광구조체들 사이의 공간을 메우는 절연층을 형성하는 단계, 상기 절연층의 상층부를 플라즈마를 이용하는 건식 식각 방법으로 제거하여 상기 보호층의 일부를 노출시키는 단계 및 상기 노출된 보호층 부분을 제거하는 단계를 포함할 수 있다.
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公开(公告)号：KR1020140000818A
公开(公告)日：2014-01-06
申请号：KR1020120068171
申请日：2012-06-25
Applicant: 삼성전자주식회사
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: Disclosed is a light emitting device including a dielectric reflector. The disclosed light emitting device includes a first conductive semiconductor layer which is formed on a substrate, a mask layer which includes a plurality of holes and is formed on the first conductive semiconductor layer, a plurality of vertical light emitting structures which are vertically grown on the first conductive semiconductor layer through the holes, a current diffusion layer which surrounds the vertical light emitting structures on the first conductive semiconductor layer, and the dielectric reflector which is formed on the current diffusion layer and fills a space between the current diffusion layers. The dielectric reflector includes pairs of dielectric layers with different refractive indexes.
Abstract translation: 公开了一种包括电介质反射器的发光器件。 所公开的发光器件包括形成在衬底上的第一导电半导体层，包括多个孔并形成在第一导电半导体层上的掩模层，多个垂直发光结构， 穿过所述孔的第一导电半导体层，围绕所述第一导电半导体层上的垂直发光结构的电流扩散层和形成在所述电流扩散层上并填充所述电流扩散层之间的空间的介质反射器。 电介质反射器包括具有不同折射率的介电层对。
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公开(公告)号：KR1020130130543A
公开(公告)日：2013-12-02
申请号：KR1020120054444
申请日：2012-05-22
Applicant: 삼성전자주식회사
Abstract: According to an embodiment of the present invention, the present invention provides a light emitting device which minimizes the number of times that light emitted sideward from a vertical light emitting device passes through a light absorption member and improves light emitting efficiency by comprising; a lower layer; multiple vertical light emitting structures placed on the lower layer; a conductive member surrounding at least a part of the multiple vertical light emitting structures; and multiple reflection members which are arranged between the multiple vertical light emitting structures and reflect the light emitted sideward from the multiple vertical light emitting structures.
Abstract translation: 根据本发明的实施例，本发明提供了一种发光装置，其使从垂直发光装置向侧方发出的光通过光吸收构件的次数最小化，并且通过包括提高发光效率， 下层 放置在下层上的多个垂直发光结构; 围绕所述多个垂直发光结构的至少一部分的导电构件; 以及多个反射构件，其布置在多个垂直发光结构之间并且反射从多个垂直发光结构向侧面发射的光。
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公开(公告)号：KR1020130107537A
公开(公告)日：2013-10-02
申请号：KR1020120029406
申请日：2012-03-22
Applicant: 삼성전자주식회사
CPC classification number: H01L33/145 , H01L33/08 , H01L33/20 , H01L33/42 , H01L2924/12041 , H01L2933/0058
Abstract: PURPOSE: A light emitting device and a method for manufacturing the same are provided to effectively prevent a leakage current by forming a protection layer made of an insulating material such as aluminum oxide. CONSTITUTION: A vertical type light emitting structure (N10) is formed on a lower layer. A protection layer (600) surrounds the lower end of the light emitting structure. The protection layer includes a material for preventing the penetration of plasma. The protection layer includes aluminum oxide. An insulating layer (650) is in contact with the protection layer and filled between the light emitting structures. [Reference numerals] (AA) Dry etching
Abstract translation: 目的：提供一种发光器件及其制造方法，以通过形成由氧化铝等绝缘材料形成的保护层来有效地防止漏电流。 构成：在下层形成有垂直型发光结构（N10）。 保护层（600）围绕发光结构的下端。 保护层包括用于防止等离子体穿透的材料。 保护层包括氧化铝。 绝缘层（650）与保护层接触并填充在发光结构之间。 （附图标记）（AA）干蚀刻
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公开(公告)号：KR1020130051240A
公开(公告)日：2013-05-20
申请号：KR1020110116471
申请日：2011-11-09
Applicant: 삼성전자주식회사
CPC classification number: H01L33/24 , B82Y20/00 , B82Y40/00 , H01L33/08 , H01L33/18 , H01L33/387 , Y10S977/932
Abstract: PURPOSE: A nanorod light emitting device and a manufacturing method thereof are provided to reduce power consumption by decreasing a leakage current using an electrode of a grid pattern. CONSTITUTION: A nanorod cluster(30) covers light emitting nanorods(26) with conductors. A filling layer(33) is laminated on the nanorod clusters. An electrode(40) is formed on the filling layer and includes a grid pattern. A connection part connects the conductors to a first electrode.
Abstract translation: 目的：提供纳米棒发光器件及其制造方法，以通过使用栅格图案的电极减少漏电流来降低功耗。 构成：纳米棒簇（30）覆盖具有导体的发光纳米棒（26）。 填充层（33）层叠在纳米棒簇上。 电极（40）形成在填充层上并且包括网格图案。 连接部将导体连接到第一电极。
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