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公开(公告)号：KR100612914B1
公开(公告)日：2006-08-16
申请号：KR1020050003859
申请日：2005-01-14
Applicant: 한국과학기술연구원
IPC: C01B31/02
Abstract: 본 발명은 수소를 거의 함유하지 않고 sp
3 분율이 높으며, 잔류응력이 감소되고 전기 저항이 증가된 것을 특징으로 하는 경질 탄소 박막을 제공한다. 이 박막은 아크 방전에 의하여 고체 탄소원의 아크젯 플라즈마를 발생시키고, 상기 반응 챔버에 아르곤을 일정한 유량으로 공급하여 상기 기판 상에 형성된다.
경질 탄소 박막, 진공여과아크법, 아르곤 가스, 잔류응력Abstract translation: 本发明涉及一种生产藻类的方法
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公开(公告)号：KR100514347B1
公开(公告)日：2005-09-13
申请号：KR1020030038361
申请日：2003-06-13
Applicant: 한국과학기술연구원
Abstract: 본 발명은 우선 기판 표면에 Ni, Cu, Pd, Au, Ag, Fe, Co, Mn, Cr, V, Mo, Nb, Ru, 및 Rh 등과 같은 금속을 포함하는 군 중에서 선택된 반응성 물질의 나노 도트(nano-dots)를 형성시킨 후, 탄소를 증착하여, 다이아몬드상 비정질 탄소 박막 내에 나노규모의 흑연상 물질을 포함하는 경질 탄소 나노복합체 박막을 제조하는 방법 및 다이아몬드상 비정질 탄소 박막 내에 나노규모의 흑연상 물질을 포함하는 경질 탄소 나노복합체 박막에 관한 것이다. 또한, 본 발명은 금속 도트의 크기를 조절함으로써, 흑연화된 부분의 크기를 제어할 수 있는 방법에 관한 것이다.
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公开(公告)号：KR1020030035444A
公开(公告)日：2003-05-09
申请号：KR1020010067540
申请日：2001-10-31
Applicant: 한국과학기술연구원
IPC: C23C14/34
CPC classification number: C23C14/0611 , C23C14/185 , C23C14/325 , C23C14/345 , C23C14/35
Abstract: PURPOSE: A preparation method for reducing residual stress as maintaining superior mechanical properties by adding silicon as a third element to silicon incorporated tetrahedral amorphous carbon thin film is provided. CONSTITUTION: The preparation method of silicon incorporated tetrahedral amorphous carbon thin film is characterized in that the silicon incorporated tetrahedral amorphous carbon thin film contains silicon by sputtering silicon using magnetron sputtering method at the same time when depositing the silicon incorporated tetrahedral amorphous carbon thin film using filtered vacuum arc deposition method, wherein the preparation method comprises the step of generating carbon plasma using the filtered vacuum arc deposition method by mounting a solid carbon source on the filter vacuum arc equipment and impressing a filtered vacuum arc power source to the filter vacuum arc equipment using a filtered vacuum arc equipment comprising arc ion source part (11), magnetic filtering part (12) and raster unit (12), a magnetron sputtering part comprising magnetron sputter gun (15) and sputter power supply system, and a synthesizing equipment comprising reaction chamber, and simultaneously depositing carbon and silicon on a substrate (14) mounted in the reaction chamber by mounting silicon on the sputter gun of the magnetron sputtering part and impressing a magnetron sputtering power source to the sputter gun, thereby sputtering the silicon at the same time.
Abstract translation: 目的：提供一种通过将硅作为第三元素加入到四面体非晶碳薄膜中而将残余应力降低以维持优异的机械性能的制备方法。 构成：掺入硅的四面体非晶碳薄膜的制备方法的特征在于，通过使用磁控溅射法通过溅射硅来包含硅的四面体非晶碳薄膜，同时使用过滤的硅嵌入的四面体非晶碳薄膜 真空电弧沉积方法，其中制备方法包括使用过滤的真空电弧沉积法，通过在过滤器真空电弧设备上安装固体碳源并将过滤后的真空电弧电源施加到过滤器真空电弧设备上来产生碳等离子体 包括电弧离子源部分（11），磁性过滤部分（12）和光栅单元（12）的过滤真空电弧设备，包括磁控溅射枪（15）和溅射电源系统的磁控溅射部分，以及包括反应 室，同时存放车 通过将硅安装在磁控管溅射部分的溅射枪上并将磁控溅射功率源施加到溅射枪上而安装在反应室中的衬底（14）上，从而同时溅射硅。
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公开(公告)号：KR1020020013981A
公开(公告)日：2002-02-25
申请号：KR1020000046263
申请日：2000-08-10
Applicant: 한국과학기술연구원
IPC: C23C16/34
CPC classification number: C23C16/0281 , C23C16/0272 , C23C16/26 , C23C16/509 , Y10S427/106
Abstract: PURPOSE: Apparatus and method for coating a diamond-like carbon film are provided which increase an adhesive force of the diamond-like carbon film by inserting a tungsten layer and a mixture layer of tungsten and carbon between a substrate and the diamond-like carbon film as adhesive force increasing layers. CONSTITUTION: In an apparatus for coating a diamond-like carbon film on a substrate(1), the apparatus comprises a vacuum chamber(20) in which the substrate is arranged; a vacuum means maintaining the inside of the vacuum chamber as the vacuum state suitable for coating; a means(50) laying up a first adhesive force increasing layer consisting of certain elements on the substrate; and a means(50) laying up the diamond-like carbon film on the first adhesive force increasing layer, wherein the apparatus further comprises a means for laying up a second adhesive force increasing layer consisting of a mixture of the elements composing the first adhesive force increasing layer and hydrocarbon on the first adhesive force increasing layer, wherein the certain elements are one or more elements selected from the group consisting of W, Mo, Pd and Ta included in Group IV to Group VI in the periodic table, the hydrocarbon is methane (CH4), the means laying up a first adhesive force increasing layer lays up the first adhesive force increasing layer by sputtering using an argon gas a sputtering gas, the means for laying up a second adhesive force increasing layer lays up the second adhesive force increasing layer by sputtering using a mixed gas of argon and hydrocarbon as a sputtering gas, and wherein the hydrocarbon gas has a content of 10 to 60%.
Abstract translation: 目的：提供用于涂覆类金刚石碳膜的装置和方法，其通过在基底和类金刚石碳膜之间插入钨层和钨和碳的混合层来增加类金刚石碳膜的粘附力 作为粘合力增加层。 构成：在用于在基板（1）上涂覆类金刚石碳膜的装置中，该装置包括其中布置基板的真空室（20）; 真空装置将真空室内部保持为适于涂覆的真空状态; 在所述基板上铺设由某些元素组成的第一粘合力增加层的装置（50） 以及在所述第一增粘层上铺设所述类金刚石碳膜的装置（50），其中所述装置还包括用于铺设由构成所述第一粘合力的所述元素的混合物构成的第二粘合力增加层的装置 在第一粘合力增加层上增加层和烃，其中某些元素是选自元素周期表IV至VI族中的W，Mo，Pd和Ta的一种或多种元素，烃是甲烷 （CH4），设置第一粘合力增加层的装置通过使用氩气的溅射气体溅射来放置第一粘合力增加层，用于铺设第二粘合力增加层的装置铺设第二粘合力增加 使用氩和烃的混合气体作为溅射气体进行溅射，其中烃气体的含量为10〜60％。
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Patent Agency Ranking
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公开(公告)号：KR101909491B1
公开(公告)日：2018-10-18
申请号：KR1020160119113
申请日：2016-09-19
Applicant: 한국과학기술연구원
IPC: G06F19/00
Abstract: 본발명은고체상물질에서불순물구조및 결함구조의특성산출방법및 이를지원하는전자장치가개시된다. 본발명의전자장치는고체상물질에서호스트(host) 물질및 불순물의물질정보를포함하는사용자입력을수신하는입력부및 사용자입력에따라적어도일부의불순물구조및 결함구조를생성하고, 생성된불순물구조및 결함구조의에너지를산출하며, 산출된에너지를기초로불순물구조및 결함구조의열역학적에너지를산출하고, 산출된열역학적에너지를기초로특정불순물구조및 특정결함구조의종류및 농도를결정하며, 결정된특정불순물구조및 특정결함구조의특성을분석하는제어부를포함한다.
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