Abstract:
The present invention relates to a Se or S based thin film solar cell capable of improving the crystallinity and the electrical property of an upper transparent electrode layer by controlling the structure of a lower transparent layer in a Se or S based light absorption based thin film solar cell, and a method for fabricating the same. In a Se or S based thin film solar cell according to the present invention which is a Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer. The lower transparent electrode layer comprises an oxide based thin film (impurity-doped Zn-Mg based oxide thin film) where the mixed oxide of Zn oxide and Mg oxide is mixed with an impurity element.
Abstract:
PURPOSE: A Se or S system thin film solar cell and a manufacturing method thereof are provided to improve photoelectric transformation efficiency of a solar battery by controlling preferred orientation of a light absorption layer through the bulk porosity adjustment of a preferred orientation control layer. CONSTITUTION: A back contact electrode(120) is formed on a substrate(110). The back contact electrode is composed of a double layer of a first back contact electrode(121) and a second back contact electrode(122). A preferred orientation control layer(130) is formed on the back contact electrode. A light absorption layer(140) is formed on the preferred orientation control layer. A window layer(150) is formed on the light absorption layer. A transparent electrode layer(160) is formed on the window layer.
Abstract:
PURPOSE: A method for growing a ZnO thin film, a thin film solar cell using the same, and a method for manufacturing the thin film solar cell are provided to prevent a void and a crack in a silicon thin film deposition process by making the surface of the ZnO thin film with a U-shape. CONSTITUTION: Textures in a (0002) direction and a (1120) direction are simultaneously grown by controlling a deposition temperature, a deposition pressure, or the injection ratio of precursors. The deposition temperature is controlled between 90 and 150 degrees centigrade. The deposition pressure is controlled between 0.1 and 10 torr. The precursor is made of oxygen materials and zinc materials.
Abstract:
본 발명은 바이오 센서 소자 및 제조 방법에 관한 것이다. 즉, 본 발명은 FET 바이오센서 소자의 게이트를 생체 적합성이 탁월한 다이아몬드 박막을 사용하여 제조함으로써 센서의 수명, 반복성 및 안정성을 크게 개선시킴과 동시에, 채널 영역에 다이아몬드를 도입했던 기존의 다이아몬드 기반의 바이오 센서(Bio-sensor)와 달리 다이아몬드를 채널 영역에서 배제한 FET(Field Effect Transistor)구조를 구현하여 센서의 민감도 개선과 더불어, 실리콘(Si) 전자회로와 동시 집적이 가능하도록 한다. 바이오, 센서, 다이아몬드, 분자, DNA, 바이러스
Abstract:
본 발명은 다이아몬드와 금속의 밀착력 향상에 관한 것으로 보다 구체적으로는 고온, 산화 분위기에서 버퍼층의 소재 및 구조를 디자인하여 다이아몬드와 금속의 접합력을 유지하는 방법에 관한 것이다. 구체적으로 본 발명은 다이아몬드층, 금속 전극층, 및 다이아몬드층과 금속 전극층 사이에 위치하는 버퍼층을 포함하는 소자에 있어서, 상기 버퍼층이 (i) 금속 질화물층(Me-N) 및 (ii) 실리콘 질화물층(Si-N), 금속-실리콘-질화물층(Me-Si-N), 보론 질화물층(BN) 및 금속-보론 질화물층(Me-BN)으로 이루어진 군으로부터 선택되는 층을 나노두께로 반복적층한 층을 포함하는 것을 특징으로 하는 소자를 제공한다. 나노 다층막, 확산 방지 막, 다이아몬드, 금속 전극, 밀착력, metallization
Abstract:
PURPOSE: A phase change memory device and a programming method thereof are provided to increase durability by applying a reverse recovery pulse. CONSTITUTION: A phase change memory array(24) comprises a plurality of phase change memory devices. A pulse generator(22) comprises a write current pulse, an erase current pulse, and a reverse recovery current pulse for the phase change memory device of a phase change memory array. The direction of the reverse recovery pulse is opposite to the direction of the write current pulse and the erase current pulse of the phase memory device. The pulse generator includes a bidirectional pulse generator which flows a current in both directions of the phase change memory device.
Abstract:
A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.
Abstract:
A method for depositing for coating on the surface and the apparatus is provided to deposit on the surface of the substrate introducing the reaction gas and is mounted on anode and serves both the bipolar role for being thus used are provided. A discharge in the space supplying the direct current voltage between the cathode(1) and the anode(2) which is installed in order to be faced with each other within the reaction chamber(5) and goes with electrode are disclosed, material is deposited on the surface of the substrate introducing the reaction gas and is mounted on anode and serves both the bipolar role. A method for depositing material at the state excluding a positive column(4) conducted as follows: a cathode glow(8) and anode glow(9) exist as the coating layer form coating the respective cathode and substrate surface; and the material is deposited in the small state as much as the positive column does not exist or it can ignore.