소스 잔류물 배출형 셔터를 구비한 진공 증발원 및 이를 포함하는 증착 장비
    51.
    发明公开
    소스 잔류물 배출형 셔터를 구비한 진공 증발원 및 이를 포함하는 증착 장비 有权
    具有切换器排放源的消耗电池和包含其的蒸发设备

    公开(公告)号:KR1020140038200A

    公开(公告)日:2014-03-28

    申请号:KR1020120104629

    申请日:2012-09-20

    CPC classification number: C23C14/243 C23C14/564 C30B23/066

    Abstract: Disclosed are a vacuum evaporation source with a source residue discharge type shutter and an evaporation device including the same. The vacuum evaporation source with the source residue discharge type shutter comprises a vacuum evaporation source body including an outer container which provides a cylindrical inner space, a crucible which is mounted inside the outer container, and a heater which is arranged between the outer container and the crucible and heats the crucible; and a shutter which is disposed at the output side of the vacuum evaporation source body to open and close the output of the crucible and has multiple flow guides extended from an area corresponding to the output of the crucible to the outer area of the outer container to discharge a source residue condensed at the inner surface facing the output of the crucible to the outside of the outer container. The evaporation device according to the present invention has the above-described configuration and comprises multiple vacuum evaporation sources disposed to be inclined to the center of a substrate in a vacuum chamber.

    Abstract translation: 公开了一种具有源极残渣放电型快门的真空蒸发源和包括其的蒸发装置。 具有源残渣排放型活门的真空蒸发源包括:真空蒸发源体,其包括提供圆柱形内部空间的外部容器;安装在外部容器内部的坩埚;以及加热器,其设置在外部容器和 坩埚加热坩埚; 以及快门,其设置在真空蒸发源体的输出侧,以打开和关闭坩埚的输出,并且具有从与坩埚的输出对应的区域延伸到外部容器的外部区域的多个流动引导件, 将在面向坩埚输出的内表面处冷凝的源残渣排出到外容器的外部。 根据本发明的蒸发装置具有上述结构,并且包括多个真空蒸发源,其设置成在真空室中倾斜于基板的中心。

    급속열처리 공정을 사용한 CIS계 화합물 박막의 제조방법 및 상기 CIS계 화합물 박막을 이용한 박막 태양전지의 제조방법
    55.
    发明公开
    급속열처리 공정을 사용한 CIS계 화합물 박막의 제조방법 및 상기 CIS계 화합물 박막을 이용한 박막 태양전지의 제조방법 有权
    通过使用快速热处理制备基于CIS的复合薄膜的制备方法和使用基于CIS的化合物薄膜制造的薄膜SOLARCELL的制备方法

    公开(公告)号:KR1020120009668A

    公开(公告)日:2012-02-02

    申请号:KR1020100069933

    申请日:2010-07-20

    CPC classification number: Y02E10/50 H01L31/0445

    Abstract: PURPOSE: A method for manufacturing a CIS based compound thin film using a rapid thermal process and a method for manufacturing a thin film solar cell using the CIS based compound thin film are provided to improve the efficiency of a light absorbing layer by increasing the crystallization of the CIS based compound thin film. CONSTITUTION: A CIS based compound thin film is formed on a substrate. A thermal selenization process of the CIS based compound thin film is performed by using a rapid thermal process. The CIS based compound thin film includes a CIS compound thin film, a CIGS compound thin film, or CZTS compound thin film. Se vapor is produced by heating Se metal. Se is vacuously deposited on the CIS based compound thin film.

    Abstract translation: 目的:提供一种使用快速热处理制造CIS基复合薄膜的方法和使用该CIS基复合薄膜制造薄膜太阳能电池的方法,以通过增加光吸收层的结晶度来提高光吸收层的效率 CIS基复合薄膜。 构成:在基板上形成基于CIS的复合薄膜。 通过使用快速热处理进行CIS基复合薄膜的热硒化过程。 基于CIS的复合薄膜包括CIS复合薄膜,CIGS复合薄膜或CZTS复合薄膜。 Se蒸汽是通过加热Se金属来生产的。 Se被空泡沉积在基于CIS的复合薄膜上。

    태양전지용 Cu-In-Zn-Sn-(Se,S)계 박막 및 이의 제조방법
    56.
    发明公开
    태양전지용 Cu-In-Zn-Sn-(Se,S)계 박막 및 이의 제조방법 有权
    用于太阳能电池的CU-IN-ZN-SN-(SE,S)薄膜及其制备方法

    公开(公告)号:KR1020110068157A

    公开(公告)日:2011-06-22

    申请号:KR1020090125004

    申请日:2009-12-15

    Abstract: PURPOSE: A Cu-In-Zn-Sn-(Se,S) thin film for solar cell and a preparation method thereof are provided to cut down manufacturing costs by reducing the amount of usage of In. CONSTITUTION: In a Cu-In-Zn-Sn-(Se,S) thin film for solar cell and a preparation method thereof, the Cu-In-Zn-Sn-(Se,S) thin film for solar cell is used as a light absorption layer in a solar cell. The Cu-In-Zn-Sn-(Se,S) thin film for solar cell is a CuInZnSnS4 thin film, a CuInZnSnSe2 thin film, or a CuInZnSnS4Se2 thin film. In the Cu-In-Zn-Sn-(Se,S) thin film,(Zn+Sn) /(In+Zn+Sn) is between 0 and 0.5.

    Abstract translation: 目的:提供一种用于太阳能电池的Cu-In-Zn-Sn-(Se,S)薄膜及其制备方法,通过减少In的使用量来降低制造成本。 构成:在用于太阳能电池的Cu-In-Zn-Sn-(Se,S)薄膜及其制备方法中,将用于太阳能电池的Cu-In-Zn-Sn-(Se,S)薄膜用作 太阳能电池中的光吸收层。 用于太阳能电池的Cu-In-Zn-Sn-(Se,S)薄膜是CuInZnSnS4薄膜,CuInZnSnSe2薄膜或CuInZnSnS4Se2薄膜。 在Cu-In-Zn-Sn-(Se,S)薄膜中,(Zn + Sn)/(In + Zn + Sn)为0〜0.5。

    Ⅰ-Ⅲ-Ⅵ2 화합물 반도체 박막의 제조장치 및 이를 이용한 제조방법
    57.
    发明公开
    Ⅰ-Ⅲ-Ⅵ2 화합물 반도체 박막의 제조장치 및 이를 이용한 제조방법 有权
    I-III-VI2化合物半导体薄膜的制造装置及其制造方法

    公开(公告)号:KR1020110026652A

    公开(公告)日:2011-03-16

    申请号:KR1020090084397

    申请日:2009-09-08

    CPC classification number: Y02E10/50 Y02P70/521 H01L31/18 H01L31/0445

    Abstract: PURPOSE: An apparatus and a method for manufacturing an I-III-VI2 compound semiconductor thin film are provided to improve reactivity by using a cracker cell which controls the amount of selenium gas or sulfur gas. CONSTITUTION: A substrate holder(112) is formed in a chamber(110). A transparent window is formed on the bottom of the chamber. An upper lamp unit(120) including a heating lamp(122) is hinge-combined with the opened upper side of the chamber. A lower heating lamp including a heating lamp(132) is combined with the lower side of the chamber. A cracker cell(140) supplies selenium gas or sulfur gas to the chamber.

    Abstract translation: 目的:提供一种用于制造I-III-VI2化合物半导体薄膜的装置和方法,以通过使用控制硒气体或硫气的量的裂解池来提高反应性。 构成:衬底保持架(112)形成在腔室(110)中。 在室的底部形成透明窗。 包括加热灯(122)的上灯单元(120)与室的敞开的上侧铰接。 包括加热灯(132)的下部加热灯与腔室的下侧组合。 裂解池(140)向室提供硒气体或硫气。

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