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公开(公告)号：KR1020100023187A
公开(公告)日：2010-03-04
申请号：KR1020080081818
申请日：2008-08-21
Applicant: 한국전자통신연구원
IPC: C04B35/10 , C04B35/453
CPC classification number: C23C14/3407 , C04B35/453 , C04B35/62615 , C04B35/62655 , C04B35/632 , C04B35/64 , C04B2235/3217 , C04B2235/3286 , C04B2235/3293 , C23C14/086
Abstract: PURPOSE: A composition for a sputtering target of an oxide semiconductor thin film, a method for manufacturing the sputtering target, and the sputtering target are provided to obtain a transparent oxide semiconductor film showing high mobility through a low-temperature process less than 300°C. CONSTITUTION: A method for manufacturing a sputtering target comprises the following steps: blending(S11) and crashing raw material powder consisting of aluminum oxide, zinc oxide, and tin oxide; molding(S12) the powder in a desired form; fist calcinating a molding product at 500 - 1000°C; pulverizing and mixing the molding product which is fist calcinated; and molding the mixed powder; sintering(S13) the molding product. Indium oxide is more included in the raw material powder.
Abstract translation: 目的：提供一种用于氧化物半导体薄膜的溅射靶的组合物，溅射靶的制造方法和溅射靶，以获得通过低于300℃的低温工艺显示高迁移率的透明氧化物半导体膜 。 构成：溅射靶的制造方法包括以下步骤：混合（S11）和粉碎由氧化铝，氧化锌和氧化锡组成的原料粉末; （S12）所需形式的粉末; 在500-1000℃煅烧成型产品; 粉碎和混合被锻烧的成型产品; 并成型混合粉末; 烧结（S13）成型品。 氧化铟更多地包含在原料粉末中。
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公开(公告)号：KR1020090065182A
公开(公告)日：2009-06-22
申请号：KR1020070132649
申请日：2007-12-17
Applicant: 한국전자통신연구원
CPC classification number: H01L27/323
Abstract: An organic light-emitting diode touch screen device and a manufacturing method thereof are provided to ensure a thin organic light-emitting diode touch screen device and to simplify a manufacturing process by using an infrared sensor. An organic light-emitting diode touch screen device comprises a display light-emitting unit and a touch sensing unit. The display light-emitting unit(200) includes a thin film transistor and an organic light-emitting diode controlled by the thin film transistor. The touch sensing unit(210) includes an infrared sensor and an infrared filter filtering and transmitting only infrared signals generated in the infrared sensor. The display light-emitting unit is arranged on the planar surface of the organic light-emitting diode touch screen device. The touch sensing unit is arranged between the display light-emitting units evenly.
Abstract translation: 提供一种有机发光二极管触摸屏装置及其制造方法，以确保薄的有机发光二极管触摸屏装置，并且通过使用红外传感器简化制造工艺。 有机发光二极管触摸屏装置包括显示发光单元和触摸感测单元。 显示发光单元（200）包括薄膜晶体管和由薄膜晶体管控制的有机发光二极管。 触摸感测单元（210）包括红外传感器和红外滤光器，其仅对红外传感器中产生的红外信号进行滤波和透射。 显示发光单元设置在有机发光二极管触摸屏装置的平面上。 触摸感测单元均匀地布置在显示发光单元之间。
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公开(公告)号：KR100859708B1
公开(公告)日：2008-09-23
申请号：KR1020060120079
申请日：2006-11-30
Applicant: 한국전자통신연구원
IPC: H01L31/0272 , H01L29/786 , H01L31/14 , H01L31/103
Abstract: 본 발명은 n-형 CIS와 p-형 CuSe를 이용한 이종접합 다이오드를 제공한다. 본 발명의 이종접합 다이오드는 기판; 상기 기판 상에 형성된 n-형의 CIS층; 상기 n-형의 CIS층 상에 형성된 p-형의 CuSe층; 상기 n-형의 CIS 층과 전기적으로 연결된 제1 전극층; 및 상기 p-형의 CuSe 층과 전기적으로 연결된 제2 전극;을 포함한다. 이와 같은 n-형 CIS와 p-형 CuSe를 이용한 이종접합 다이오드는 정류특성을 가질 뿐만 아니라 빛을 조사할 경우 빛을 조사하지 않은 경우에 비하여 전류의 크기가 더 세지는 광특성을 보인다.
n-형 CIS, p-형 CuSe, 이종접합 다이오드, 광특성-
公开(公告)号：KR1020080032590A
公开(公告)日：2008-04-15
申请号：KR1020070037955
申请日：2007-04-18
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L29/78681 , H01L29/26
Abstract: A thin film transistor having a chalcogenide layer and a fabrication method thereof are provided to utilize the chalcogenide layer as an optical conductive layer, and to compose an optical or electrical thin film transistor by applying the rectification function of a diode. An amorphous chalcogenide layer(205a) forms a channel layer. A crystalline chalcogenide layer(205b) is formed on both sides of the amorphous layer to form a source region and a drain region. A source and drain electrodes(210,215) are formed on both sides of the amorphous chalcogenide layer and connected to the source and drain regions of the crystalline chalcogenide layer, respectively. A gate electrode is formed on or under the channel layer with a gate insulation layer being interposed between the channel layer and the gate electrode.
Abstract translation: 提供具有硫族化物层的薄膜晶体管及其制造方法，以利用硫族化物层作为光导体层，并通过施加二极管的整流功能来构成光电薄膜晶体管或电薄膜晶体管。 无定形硫族化物层（205a）形成通道层。 在非晶层的两侧形成结晶硫族化物层（205b），形成源极区域和漏极区域。 源极和漏极（210,215）分别形成在非晶态硫族化物层的两侧，并分别连接到结晶硫族化物层的源极和漏极区。 栅极电极形成在沟道层上或下面，栅极绝缘层介于沟道层和栅电极之间。
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公开(公告)号：KR100819121B1
公开(公告)日：2008-04-03
申请号：KR1020070036583
申请日：2007-04-13
Applicant: 한국전자통신연구원
IPC: H01L31/0749 , H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0749 , H01L31/0445 , H01L31/18
Abstract: A method for forming a cadmium sulfide thin film and a cadmium sulfide diode by using chemical bath deposition is provided to form a Cd(Cu)S thin film and a CdS thin film in thick and uniform by additionally using ammonium chloride and triethylamine. A substrate(11) is immersed in a solution containing at least one Cd salt, at least one Cu salt, at least one sulphur source, ammonia, ammonium chloride and triethylamine to form a Cd(Cu)S thin film. The Cd salt comprises cadmium chloride(CdCl2), cadmium sulfide(CdSO4) or cadmium acetate(Cd(CH3COO)2). The Cu salt comprises copper sulfate(CuSO4). The solution is stored in a reactor, and the reactor is heated by a temperature of 45 to 65 °C during 20 to 60 minutes.
Abstract translation: 通过使用化学浴沉积法形成硫化镉薄膜和硫化镉二极管的方法，通过另外使用氯化铵和三乙胺形成Cd（Cu）S薄膜和厚度均匀的CdS薄膜。 将基材（11）浸入含有至少一种Cd盐，至少一种Cu盐，至少一种硫源，氨，氯化铵和三乙胺的溶液中以形成Cd（Cu）S薄膜。 镉盐包括氯化镉（CdCl2），硫化镉（CdSO4）或乙酸镉（镉（CH3COO）2）。 Cu盐包括硫酸铜（CuSO4）。 将溶液储存在反应器中，并将反应器在45至65℃的温度下加热20至60分钟。
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Patent Agency Ranking
公开(公告)号：KR1020060027718A
公开(公告)日：2006-03-28
申请号：KR1020040076633
申请日：2004-09-23
Applicant: 한국전자통신연구원
Abstract: 본 발명은 대물렌즈의 광축 방향으로 액츄에이터를 움직이게 하는 포커싱 코일을 구비하는 포커싱 자기회로부와 디스크의 래디얼 방향으로 액츄에이터를 움직이게 하는 트래킹 코일을 구비하는 트래킹 자기회로부와 상기 포커싱 자기회로, 트래킹 자기회로 및 대물렌즈 홀더를 구비하는 보빈과 상기 보빈의 일부를 베이스에 지지하기 위한 적어도 하나의 서스펜션을 구비하되, 포커싱 자기회로부와 상기 트래킹 자기회로부는 상기 보빈을 중심으로 좌우로 독립하여 분리된 구조를 갖는 광픽업 액츄에이터를 제공한다. 광픽업 액츄에이터는 휴대용 초소형 광 디스크 드라이브의 핵심 부품으로 응용될 수 있다. 휴대용 전자기기에 광 디스크 드라이브가 사용되기 위해서는 적절한 기록 용량을 가지면서 크기가 작고 두께가 얇아야 한다.
광픽업 액츄에이터, 광 디스크, 대물렌즈, 트래킹, 포커싱-
公开(公告)号：KR1020050063636A
公开(公告)日：2005-06-28
申请号：KR1020040011021
申请日：2004-02-19
Applicant: 한국전자통신연구원
IPC: G11B5/31
Abstract: 본 발명은 박막 자기 헤드의 제조방법에 관한 것으로, 특히 초미세 자기재생 소자를 제작함에 있어 포토 레지스트의 플로우 공정을 적용하여 하드 마그네트층과 금속다층박막 사이를 분리시킴과 아울러 포토 레지스트를 이용하여 상부전극과 하부전극 사이를 절연시킴으로써, 제조공정을 단순화, 최적화할 수 있을 뿐만 아니라 제조공정의 시간을 효과적으로 단축시킬 수 있는 박막 자기 헤드의 제조방법을 제공한다.
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公开(公告)号：KR1020040026291A
公开(公告)日：2004-03-31
申请号：KR1020020057685
申请日：2002-09-24
Applicant: 한국전자통신연구원
IPC: G02B6/00
CPC classification number: H01S3/094003 , H01S3/161
Abstract: PURPOSE: An optical amplifier is provided to improve the pumping efficiency by using phosphors of 1.6 micrometer emitted from ions of holmium added to an optical fiber or an optical waveguide. CONSTITUTION: An optical amplifier includes an optical member, a pumping unit, an input unit, a WDM coupler, and an output unit. The optical member includes a core including holmium and a clad. The pumping unit is optically connected to the pumping unit in order to irradiate the pumping light to the optical member. The pumping unit includes the first light source for emitting light of a wavelength band of 11,200 to 11,500 cm¬-1 and the second light source for emitting light of a wavelength band of 6,000 to 6,500 cm¬-1. The input unit inputs an optical signal to the optical member. The WDM coupler is used for coupling incident signal light of the input unit and the pumping light of the pumping unit. The output unit receives an amplified signal of the optical member.
Abstract translation: 目的：提供一种光放大器，通过使用从加入到光纤或光波导中的钬的离子发射的1.6微米的荧光体来提高泵浦效率。 构成：光放大器包括光学部件，泵送单元，输入单元，WDM耦合器和输出单元。 光学构件包括包括钬和包层的芯。 泵送单元光学地连接到泵送单元以便将泵浦光照射到光学构件。 泵送单元包括用于发射波长带11,200至11,500cm -1的光的第一光源和用于发射6,000至6,500cm -1的波段的光的第二光源。 输入单元将光信号输入到光学构件。 WDM耦合器用于耦合输入单元的入射信号光和泵送单元的泵浦光。 输出单元接收光学构件的放大信号。
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59.发明公开
公开(公告)号：KR1020020080620A
公开(公告)日：2002-10-26
申请号：KR1020010020281
申请日：2001-04-16
Applicant: 한국전자통신연구원
IPC: G02B6/293
CPC classification number: G02B6/12004 , G02B6/12007 , G02B6/12021 , G02B6/356 , H04J14/02 , H04J14/0221 , H04Q11/0005 , H04Q2011/0011 , H04Q2011/0016 , H04Q2011/0024
Abstract: PURPOSE: A high wavelength selector, and multi-channel selector for space and wavelength in high speed optical integrated circuit using the high wavelength selector is provided to solve problems of process complication, high costs and low-rate production by using an optical waveguide switch made of electro-optical polymer and glass materials. CONSTITUTION: An apparatus for selecting a high speed quantum integrated space and a wavelength multiplexing channel by using the high speed wavelength selector includes a spatial multiplexing channel selector(A), N channel high speed wavelength selector(B), an optical amplifier(106) and a wavelength convertor(105). The spatial multiplexing channel selector(A) is provided with an optical waveguide switch(104) made of a planar waveguide integration type and 1 x M channel couplers(107) and formed on an input terminal of the optical waveguide for selecting the spatial multiplexing optical signal channel in high speed to output. The optical amplifier(106) is installed on an optical waveguide(101) between a spatial multiplexing channel selection switch(A) made of a planar waveguide integration type and N channel high speed wavelength selector(B) and amplifies an optical signal passing therethrough to output the amplified optical signal to the N channel high speed wavelength selector(B). The N channel high speed wavelength selector(B) installed on the optical waveguide(101) in the output terminal of the optical amplifier(106) selectively outputs the amplified optical signal as a channel wavelength.
Abstract translation: 目的：使用高波长选择器的高速光学集成电路中的高波长选择器和多通道选择器用于高速光学集成电路，以通过使用光波导开关来解决工艺复杂性，高成本和低速率生产的问题 的电光聚合物和玻璃材料。 一种用于通过使用高速波长选择器来选择高速量子积分空间和波长多路复用通道的装置，包括空间复用通道选择器（A），N通道高速波长选择器（B），光放大器（106） 和波长转换器（105）。 空间复用通道选择器（A）设置有由平面波导集成型和1×M通道耦合器（107）制成的光波导开关（104），并形成在光波导的输入端上，用于选择空间复用光 信号通道以高速输出。 光放大器（106）安装在由平面波导积分型空间多路复用通道选择开关（A）和N通道高速波长选择器（B）之间的光波导（101）上，并放大通过其的光信号 将放大的光信号输出到N通道高速波长选择器（B）。 安装在光放大器（106）的输出端子上的光波导（101）上的N通道高速波长选择器（B）选择性地输出放大的光信号作为通道波长。
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公开(公告)号：KR100312433B1
公开(公告)日：2001-11-05
申请号：KR1019990056201
申请日：1999-12-09
Applicant: 한국전자통신연구원
IPC: G02B6/00
CPC classification number: H01S3/06716 , H01S3/1606 , H01S3/1616 , H01S2301/02
Abstract: 본발명은 1450 ㎚대역에서이득을나타내는툴륨이온을첨가한광섬유증폭기가 800 ㎚대역에서발생하는증폭된자발방출때문에이득이포화되는현상을방지하여결과적으로 1450 ㎚대역에서의이득특성을향상시킬수 있는툴륨첨가광섬유증폭기의증폭효율향상을위한복합희토류이온첨가광섬유에관한것으로, 그내부에툴륨이온첨가층을포함하는코어, 코어를둘러싸는클래드및 상기툴륨이온첨가층으로부터발생하는 800 ㎚파장대역의형광을흡수하기위하여상기툴륨이온첨가층으로부터이격되어형성된에너지흡수이온첨가층을포함하는광섬유를제공한다. 상기에너지흡수이온첨가층은디스프로슘또는네오디뮴이온중 적어도어느하나가첨가되고, 코어내부에위치하거나또는클래드내부에위치하며, 툴륨이온첨가층과상기에너지흡수이온이온층과의거리는최소 20 ㎚이다. 또한, 본발명은전술한광섬유구조를포함하는광증폭기및 레이저를제공한다.
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