-
公开(公告)号：KR1020130098970A
公开(公告)日：2013-09-05
申请号：KR1020130097649
申请日：2013-08-19
Applicant: 씨제이제일제당 (주) , 한국과학기술연구원
Abstract: PURPOSE: A food container manufacturing method of is provided to prevent stain generated as food is adhered on a surface of a food container and to reduce food residue remaining on the food container. CONSTITUTION: Multiple nanostructures (20) is formed on a surface of a food container (300) in contact with food (60). A first hydrophobic film (30) is coated on an upper side of the surface where the nanostructure is formed. A gas barrier (40) is formed between the surface of the food container and the first hydrophobic film. A contact angle of the first hydrophobic film is 90 degrees or greater, and a contact angle hysteresis thereof is less than 30 degrees. The sum of thicknesses of the first hydrophobic film and the gas barrier is equal to or less than a half of a height of the nanostructure. A second hydrophobic film (50) is formed between the surface of the food container and the gas barrier. The nanostructure is formed of at least one form selected from a nanofiber, a nanorod, a nanodot, and a nanowire. The nanostructure has a width of 1 to 100 nm and a height of 1 to 1000 nm.
Abstract translation: 目的：提供一种食品容器的制造方法，用于防止食品附着在食品容器的表面上产生的污渍，并减少残留在食品容器上的食物残留物。 构成：在与食物（60）接触的食物容器（300）的表面上形成多个纳米结构（20）。 第一疏水膜（30）涂覆在形成纳米结构的表面的上侧。 在食品容器的表面和第一疏水膜之间形成气体阻隔物（40）。 第一疏水膜的接触角为90度以上，其接触角滞后小于30度。 第一疏水膜和气体屏障的厚度之和等于或小于纳米结构高度的一半。 在食物容器的表面和气体屏障之间形成第二疏水膜（50）。 纳米结构由选自纳米纤维，纳米棒，纳米点和纳米线中的至少一种形式形成。 纳米结构的宽度为1〜100nm，高度为1〜1000nm。
-
公开(公告)号：KR1020120036213A
公开(公告)日：2012-04-17
申请号：KR1020100097960
申请日：2010-10-07
Applicant: 한국과학기술연구원
CPC classification number: C23F1/02 , B81C2201/013 , C23F4/04
Abstract: PURPOSE: A superhydrophobic surface and steel thereof and the fabrication method thereof are provided to diminish wettability of surface and to minimize contact angle hysteresis by coating a material of low surface energy. CONSTITUTION: A superhydrophobic surface includes a hydrophobic film and a steel surface. The nano/micro pattern is formed in the steel surface. The hydrophobic thin film is formed on the steel surface. The contact angle of the superhydrophobic surface is over 150. The contact angle hysteresis is less than 5.
Abstract translation: 目的：提供超疏水表面及其制造方法及其制造方法，以减少表面的润湿性，并通过涂覆低表面能的材料来最小化接触角滞后。 构成：超疏水表面包括疏水膜和钢表面。 纳米/微图案形成在钢表面。 疏水性薄膜形成在钢表面。 超疏水表面的接触角超过150.接触角滞后小于5。
-
公开(公告)号：KR1020110062115A
公开(公告)日：2011-06-10
申请号：KR1020090118704
申请日：2009-12-02
Applicant: 한국과학기술연구원
CPC classification number: B82B1/008 , B82B3/008 , B82Y30/00 , C23C14/0605 , C23C14/221 , C23C14/34 , C23C16/26 , C23C16/513 , D06M11/74 , D06M11/78 , D06M11/83
Abstract: PURPOSE: A producing method of a hydrophilic surface material, and an increasing method of the surface hydrophilic property are provided to prevent the scattering of a dehumidifying solution during a circulation process by including a nano-structured carbon coating layer. CONSTITUTION: A producing method of a hydrophilic surface material containing a nano-structured carbon coating layer with Si, and a micro-pore contains the following steps: preparing a raw material with the micro-pore; and coating the raw material with carbon containing Si to form the nano-structured carbon coating layer. The equilibrium contact angle of the nano-structured carbon coating layer is less than 90degrees. The carbon contains 0.1~10mass% of Si.
Abstract translation: 目的：提供一种亲水性表面材料的制造方法和表面亲水性的增加方法，以通过包括纳米结构的碳涂层来防止循环过程中的除湿溶液的散射。 构成：含有具有Si的纳米结构碳涂层的亲水性表面材料的制造方法和微孔包含以下步骤：用微孔制备原料; 并用含Si的Si涂覆原料以形成纳米结构的碳涂层。 纳米结构碳涂层的平衡接触角小于90度。 碳含有0.1〜10质量％的Si。
-
公开(公告)号：KR1020100101883A
公开(公告)日：2010-09-20
申请号：KR1020090020304
申请日：2009-03-10
Applicant: 한국과학기술연구원
IPC: H01L31/0445 , H01L31/0236 , B82Y40/00
CPC classification number: Y02E10/50 , H01L31/0445 , B82Y40/00 , H01L31/0236
Abstract: PURPOSE: A thin film solar cell, a method for manufacturing the same, and a method for manufacturing the optical absorption layer of the same of the same are provided to improve the conversion efficiency of the solar cell by modifying the surface of the optical absorption layer. CONSTITUTION: A rear electrode is formed on a substrate. An optical absorption layer, based on a copper indium gallium selenide material, is formed on the rear electrode. The surface of the optical absorption layer is treated, and a nano-pattern is formed on the surface of the optical absorption layer in order to improve an optical absorption rate. A buffer layer and a transparent electrode are successively formed on the surface-treated optical absorption layer.
Abstract translation: 目的：提供薄膜太阳能电池及其制造方法及其制造方法，以通过改变光吸收层的表面来提高太阳能电池的转换效率 。 构成：背面电极形成在基板上。 基于铜铟镓硒材料的光吸收层形成在后电极上。 处理光吸收层的表面，并且在光吸收层的表面上形成纳米图案以提高光吸收率。 在表面处理的光吸收层上依次形成缓冲层和透明电极。
-
公开(公告)号：KR1020100042436A
公开(公告)日：2010-04-26
申请号：KR1020080101580
申请日：2008-10-16
Applicant: 한국과학기술연구원
CPC classification number: C08J7/123 , Y10T428/269 , Y10T428/31504
Abstract: PURPOSE: A method for manufacturing a polymer in which a tilted micro pillar array is formed is provided to control the tilted angle of micro pillar by controlling at least one of incedence angle, irradiation time, and the size of acceleration voltage. CONSTITUTION: A tilted micro pillar array formed polymer comprises a polymer material in which micro pillar array is formed; and a pillar array manufactured using any one of incedence angle control of ion beam treatment to whole upside region of the micro pillar array, thin film coating, and sputtering of metal/nonmetal materials.
Abstract translation: 目的：提供一种制造其中形成倾斜微柱阵列的聚合物的方法，通过控制倾角，照射时间和加速电压的大小中的至少一个来控制微柱的倾斜角。 构成：倾斜的微柱阵列形成的聚合物包括形成微柱阵列的聚合物材料; 以及使用离子束处理的倾斜角度控制对微柱阵列的整个上侧区域，薄膜涂覆和金属/非金属材料的溅射制造的柱阵列。
-
Patent Agency Ranking
公开(公告)号：KR100649091B1
公开(公告)日：2006-11-27
申请号：KR1020050050557
申请日：2005-06-13
Applicant: 한국과학기술연구원
Abstract: A tungsten contained diamond-like carbon film that increases the service life of the target by maintaining the coating reliably in a target coated with a diamond-like carbon film with excellent mechanical properties, a method for manufacturing the tungsten contained diamond-like carbon film, and a dental tool manufactured by the method are provided. A tungsten contained diamond-like carbon film comprises: a thin film type amorphous carbon matrix; and tungsten in the atomic state added to the carbon matrix, wherein the tungsten is added to the carbon matrix up to a range in which a secondary phase of the carbon matrix is not generated. A tungsten contained diamond-like carbon film comprises: a thin film type amorphous carbon matrix; and tungsten in the atomic state added to the carbon matrix, wherein the tungsten is added to the carbon matrix in a range of 2.3 to 3.3 at.%. A method for manufacturing a tungsten contained diamond-like carbon film comprises the steps of: (a) holding a target to a holder within a vacuum chamber of a composite coating equipment; and (b) controlling a content of tungsten sputtered to the target to a range of 2.3 to 3.3 at.% by controlling an Ar fraction while injecting an ion beam toward the target.
Abstract translation: 一种含钨类金刚石碳膜，通过将涂层可靠地保持在涂覆有具有优异机械性能的类金刚石碳膜的靶中而延长了靶的使用寿命，一种制造含钨类金刚石碳膜的方法， 以及通过该方法制造的牙科工具。 含钨类金刚石碳膜包括：薄膜型无定形碳基质; 以及添加到碳基体中的处于原子状态的钨，其中将钨添加到碳基体中直到其中不产生碳基体的次生相的范围。 含钨类金刚石碳膜包括：薄膜型无定形碳基质; 以及添加到碳基体中的处于原子状态的钨，其中钨以2.3-3.3原子％的范围添加到碳基体中。 一种制造含钨类金刚石碳膜的方法，包括以下步骤：（a）将靶固定在复合涂层设备的真空室内的夹具上; （b）通过控制Ar分数，同时将离子束注入靶材，将溅射到靶材上的钨含量控制在2.3-3.3原子％的范围内。
-
公开(公告)号：KR100612914B1
公开(公告)日：2006-08-16
申请号：KR1020050003859
申请日：2005-01-14
Applicant: 한국과학기술연구원
IPC: C01B31/02
Abstract: 본 발명은 수소를 거의 함유하지 않고 sp
3 분율이 높으며, 잔류응력이 감소되고 전기 저항이 증가된 것을 특징으로 하는 경질 탄소 박막을 제공한다. 이 박막은 아크 방전에 의하여 고체 탄소원의 아크젯 플라즈마를 발생시키고, 상기 반응 챔버에 아르곤을 일정한 유량으로 공급하여 상기 기판 상에 형성된다.
경질 탄소 박막, 진공여과아크법, 아르곤 가스, 잔류응력Abstract translation: 本发明涉及一种生产藻类的方法
-
公开(公告)号：KR100514347B1
公开(公告)日：2005-09-13
申请号：KR1020030038361
申请日：2003-06-13
Applicant: 한국과학기술연구원
Abstract: 본 발명은 우선 기판 표면에 Ni, Cu, Pd, Au, Ag, Fe, Co, Mn, Cr, V, Mo, Nb, Ru, 및 Rh 등과 같은 금속을 포함하는 군 중에서 선택된 반응성 물질의 나노 도트(nano-dots)를 형성시킨 후, 탄소를 증착하여, 다이아몬드상 비정질 탄소 박막 내에 나노규모의 흑연상 물질을 포함하는 경질 탄소 나노복합체 박막을 제조하는 방법 및 다이아몬드상 비정질 탄소 박막 내에 나노규모의 흑연상 물질을 포함하는 경질 탄소 나노복합체 박막에 관한 것이다. 또한, 본 발명은 금속 도트의 크기를 조절함으로써, 흑연화된 부분의 크기를 제어할 수 있는 방법에 관한 것이다.
-
公开(公告)号：KR1020030035444A
公开(公告)日：2003-05-09
申请号：KR1020010067540
申请日：2001-10-31
Applicant: 한국과학기술연구원
IPC: C23C14/34
CPC classification number: C23C14/0611 , C23C14/185 , C23C14/325 , C23C14/345 , C23C14/35
Abstract: PURPOSE: A preparation method for reducing residual stress as maintaining superior mechanical properties by adding silicon as a third element to silicon incorporated tetrahedral amorphous carbon thin film is provided. CONSTITUTION: The preparation method of silicon incorporated tetrahedral amorphous carbon thin film is characterized in that the silicon incorporated tetrahedral amorphous carbon thin film contains silicon by sputtering silicon using magnetron sputtering method at the same time when depositing the silicon incorporated tetrahedral amorphous carbon thin film using filtered vacuum arc deposition method, wherein the preparation method comprises the step of generating carbon plasma using the filtered vacuum arc deposition method by mounting a solid carbon source on the filter vacuum arc equipment and impressing a filtered vacuum arc power source to the filter vacuum arc equipment using a filtered vacuum arc equipment comprising arc ion source part (11), magnetic filtering part (12) and raster unit (12), a magnetron sputtering part comprising magnetron sputter gun (15) and sputter power supply system, and a synthesizing equipment comprising reaction chamber, and simultaneously depositing carbon and silicon on a substrate (14) mounted in the reaction chamber by mounting silicon on the sputter gun of the magnetron sputtering part and impressing a magnetron sputtering power source to the sputter gun, thereby sputtering the silicon at the same time.
Abstract translation: 目的：提供一种通过将硅作为第三元素加入到四面体非晶碳薄膜中而将残余应力降低以维持优异的机械性能的制备方法。 构成：掺入硅的四面体非晶碳薄膜的制备方法的特征在于，通过使用磁控溅射法通过溅射硅来包含硅的四面体非晶碳薄膜，同时使用过滤的硅嵌入的四面体非晶碳薄膜 真空电弧沉积方法，其中制备方法包括使用过滤的真空电弧沉积法，通过在过滤器真空电弧设备上安装固体碳源并将过滤后的真空电弧电源施加到过滤器真空电弧设备上来产生碳等离子体 包括电弧离子源部分（11），磁性过滤部分（12）和光栅单元（12）的过滤真空电弧设备，包括磁控溅射枪（15）和溅射电源系统的磁控溅射部分，以及包括反应 室，同时存放车 通过将硅安装在磁控管溅射部分的溅射枪上并将磁控溅射功率源施加到溅射枪上而安装在反应室中的衬底（14）上，从而同时溅射硅。
-
-
-
-
-
-
-
-
Search Results
109
records
(took 0.033 seconds)
