公开(公告)号：JPS63200530A

公开(公告)日：1988-08-18

申请号：JP3386687

申请日：1987-02-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO ,  TODOKORO YOSHIHIRO

IPC: G03F1/00 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To equip an X-ray absorber layer with a pattern having vertical side walls without destroying an X-ray transmission layer by laminating a non-etching thin film and the X-ray absorber layer on the X-ray transmission layer. CONSTITUTION:An Si3N4 film 2 (tensile stress of its film is around 5X10 dyne) is prepared on a silicon wafer 1 with a plasma CVD technique and an SiO2 film 3 (tensile stress of its film is 0), a W-film 4 (tensile stress of its film is 0), and a dry-etching resistance electron beam resist 5 are laminated with a high frequency spatter technique and then a mask 5 is produced by performing electron beam lithography and development of the above films after carrying out pre-bake. An RIE is performed by using SF6/CCl4. When a slight etching is continued after exposing the SiO2 film 3, a W-pattern 4 having vertical walls is obtained and the Si3N4 film 2 does not change at all. As a result, Si 1 is etched from the rear of the wafer 1 and a patterned mask is completed after leaving a frame part.

公开(公告)号：JPS63181428A

公开(公告)日：1988-07-26

申请号：JP1470287

申请日：1987-01-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent a resist from being charged with electricity by incident electrons by a method wherein one layer of film out of multilayered resist films formed on a substrate is composed of a conductive high-polymer thin film and these multilayered resist films are exposed to an electron beam. CONSTITUTION:A conductive high-polymer thin film 2, e.g., a thin film of polyvinyl alcohol doped with minute particles of carbon, is applied to the surface of a silicon substrate 1. Then, after this assembly has been heat-treated, it is coated with a silicone-related resist 3, e.g. chloromethylated polyphenylsiloxane. After this assembly has been heat-treated furthermore, a two-layer resist is formed. After that, after this assembly has been exposed by an electron beam and then developed, a silicone-related resist pattern is formed. Lastly, after the conductive high-polymer film 2 has been etched by a reactive ion etching method using a gas of O2, a pattern 5 of the conductive high-polymer thin film is formed. By this method, the exposure using the electron beam can be executed by excluding the situation that the assembly is charged with electricity by incident electrons. As a result, the electron beam is not bent, and it is possible to prevent the distortion of a pattern and the displacement of the pattern.

公开(公告)号：JPS63102322A

公开(公告)日：1988-05-07

申请号：JP24873986

申请日：1986-10-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To perform the transfer of a pattern on the lowest layer of an organic thin film at high speed in a highly precise manner by a method wherein a thin film, consisting of the fluoric atom containing material having the specific speed of etching by plasma, is provided on an organic thin film, and dry etching is performed using said thin film as a mask. CONSTITUTION:On an Si substrate 1,1-borax photoresist 2 is applied as an organic thin film, and a heat treatment is performed at 250 deg.C. A coating Al2O3 film 3 is applied thereon, and a heat treatment is performed at 200 deg.C. An electron beam resist such as PMMA (polymethyl methacrylate) 6 is applied, and a prebaking is performed at 170 deg.C. Under the condition of practical pressure of plasma etching, the etching speed of the Al2O3 film 3 is 10 nm/min. or below. Plasma etching is performed using the mixed gas of CF4 of 10% and O2 and a reactive ion etching equipment and also using a coating Al2O3 film 3 pattern as a mask, and a pattern is formed. As a result, the lowest layer of an organic thin film can be etched at high speed in a highly precise manner.

公开(公告)号：JPS6216534B2

公开(公告)日：1987-04-13

申请号：JP1371179

申请日：1979-02-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  TAKEDA SETSUKO ,  KAWAMOTO YOSHIHISA

IPC: H01L29/812 ,  H01L21/027 ,  H01L21/28 ,  H01L21/30 ,  H01L21/306 ,  H01L21/338

公开(公告)号：JPS6276724A

公开(公告)日：1987-04-08

申请号：JP21706685

申请日：1985-09-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO ,  YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To extend the dissolving range of an organic thin film by forming the film sensitively depending upon temperature by absorbing light on a substrate, and heat treating from low to high temperature in a plurality of stages. CONSTITUTION:A substrate 1 is coated with polyimide or polyimide silane resin thin film 2, treated at 140 deg.C for 20min, at 170 deg.C for 20min, coated with PMMA 3, and baked at 170 deg.C for 20min. A resist pattern 4 is formed by exposing and developing, the film 2 of the hole is treated with developer to form a pattern. Thus, the temperature dependency of the dissolving rate of polyimide or polyimide silane resin is alleviated by the heat treatments of several stages to be readily controlled, the available dissolving rate is extended, and a fine pattern is formed by a resist required to be prebaked at relatively high temperature like PMMA.

公开(公告)号：JPS6229134A

公开(公告)日：1987-02-07

申请号：JP16794385

申请日：1985-07-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable fine patterns and large patterns to be drawn with high precision while cutting down the image drawing time by a method wherein patterns exceeding 1mum thick are exposed at specified exposure dosage and after they are developed, fine patterns are exposed at exposure dosage exceeding two times of specified dosage to be developed by a developer at resist resolving speed less than a specified value. CONSTITUTION:A silicon Si substrate 1 is coated with positive type electron beam resist PMMA2 0.5mum thick to be prebaked at 170 deg.C for 20min and then patterns 3 exceeding 1mum thick are exposed. Later the patterns exceeding 1mum thick are formed by developing methylisobutylketone (MIBK) at room temperature. Next the fine patterns are exposed by exposure dosage of 6.4X10muc/cm and then developed at room temperature for two minutes to form fine patterns with linear width of 0.1mum and vertical sectional profile. Through these procedures, patterns exceeding 1mum thick and fine patterns around 0.1mum thick can be formed with high precision within a short image drawing time.

公开(公告)号：JPS61209442A

公开(公告)日：1986-09-17

申请号：JP5004185

申请日：1985-03-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： IMORIYA TADASHI ,  TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: G03C5/08 ,  G03C1/00 ,  G03F7/039 ,  G03F7/20 ,  G03F7/36 ,  H01L21/027

Abstract: PURPOSE:To facilitate a pattern control by applying a linear high molecular resin thin film to a substrate, heating and developing the prescribed part after it is exposed with far ultraviolet rays. CONSTITUTION:A positive resist PMMA 2 is coated to the Si substrate 1, and prebaking is executed for 20min at 170 deg.C. Next far ultraviolet rays 3 are irradiat ed to the prescribed part for 200min. In such a case a far ultraviolet ray light source is a 500WXe-Hg ark lamp, and light intensity on the substrate is 17mW/cm . Finally the substrate is heated for 20min on a hot plate 4 where a sample after exposure is held at 120 deg.C, whereby the PMMA having been exposed is removed to form a pattern. At this time the film reduction of the non-exposed part is less than 100Angstrom . After heating continues more than 20min, the residual film of the PMMA comes to zero.

公开(公告)号：JPS61137324A

公开(公告)日：1986-06-25

申请号：JP25953784

申请日：1984-12-07

Applicant: Matsushita Electronics Corp

Inventor： TODOKORO YOSHIHIRO ,  TAKASU YASUHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F7/70875 ,  H01L21/30

Abstract: PURPOSE:To obtain a thin film pattern of organic resin with a single process, by irradiating a substrate surface with far ultraviolet rays in the form of the specified pattern and also irradiating an organic resin material with far ultraviolet rays. CONSTITUTION:A far ultraviolet ray pattern 5 is formed by an Xe-Hg lamp and a quartz photomask, the light of Xe-Hg lamp is condensed with a CaF2 lens. A high output beam 6 obtained is used for irradiation of a PMMA vaporization source. When heated up to 300 deg.C or less, the PMMA is easily vaporized, the PMMA film 4' is selectively deposited to the area not irradiated with the far ultraviolet rays on the Si substrate, forming a pattern which is reversed from the pattern 5. Thereby, PMMA is decomposed and eliminated at the irradiated area and any growth is not carried out. The PMMA resist pattern is formed in the same way as the substrate coated with PMMA previously. The process can be simplified by this method.

Abstract translation: 目的：为了通过单一工艺获得有机树脂的薄膜图案，通过用特定图案形式的远紫外线照射基板表面并且还以远紫外线照射有机树脂材料。 构成：Xe-Hg灯和石英光掩模形成远紫外线图案5，Xe-Hg灯的光与CaF2透镜凝结。 获得的高输出光束6用于PMMA蒸发源的照射。 当加热至300℃以下时，PMMA容易蒸发，将PMMA膜4'选择性地沉积在Si衬底上未被远紫外线照射的区域上，形成与图案5相反的图案 由此，PMMA在照射区域被分解除去，不进行任何生长。 PMMA抗蚀剂图案的形成方式与先前用PMMA涂布的基板相同。 该方法可以简化过程。

公开(公告)号：JPS6170723A

公开(公告)日：1986-04-11

申请号：JP19287284

申请日：1984-09-14

Applicant: Matsushita Electronics Corp

Inventor： TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01L21/30

Abstract: PURPOSE:To form an accurate inverted resist pattern by coating the first resist pattern formed on a substrate with the second resist, emitting far ultraviolet ray, heat treating it, then removing the second resist on the first resist pattern, and then removing the first resist pattern. CONSTITUTION:A polymethylmethacrylate (PMMA)2 of positive type electron beam resist is coated on a silicon wafer 1, prebaked, and the pattern is exposed by an electron beam to form a pattern 3. Then, a polystyrene negative resist 4 is coated, prebaked, and the resist on the PMMA resist pattern is then removed by oxygen ashing. After far ultraviolet light is then emitted, it is baked, dipped in developer methylisobutylketone of the PMMA resist for 2min to remove the PMMA resist. Thus, higher resolution than the normal negative resist pattern can be obtained.

Abstract translation: 目的：通过用第二抗蚀剂涂布形成在基板上的第一抗蚀剂图案，发射远紫外线，进行热处理，然后除去第一抗蚀剂图案上的第二抗蚀剂，然后除去第一抗蚀剂，形成精确的反相抗蚀剂图案 模式。 构成：将正型电子束抗蚀剂的聚甲基丙烯酸甲酯（PMMA）2涂覆在硅晶片1上，预烘烤，并通过电子束曝光图案以形成图案3.然后，涂布聚苯乙烯负性抗蚀剂4，预烘烤 ，然后通过氧化灰化除去PMMA抗蚀剂图案上的抗蚀剂。 然后放出远紫外光后，将其烘烤，浸在PMMA抗蚀剂的显影剂甲基异丁基酮中2分钟以除去PMMA抗蚀剂。 因此，可以获得比正常的抗蚀剂图案更高的分辨率。

公开(公告)号：JPS619391B2

公开(公告)日：1986-03-22

申请号：JP528981

申请日：1981-01-16

Applicant: Matsushita Electronics Corp

Inventor： TODOKORO YOSHIHIRO

IPC: C23F4/00 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/3435