公开(公告)号：WO2011072161A3

公开(公告)日：2011-11-10

申请号：PCT/US2010059759

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触背结太阳能电池和制造方法。 该背接触背结太阳能电池包括具有光捕获前表面的衬底，该光捕获前表面具有钝化层，掺杂的基极区域以及具有与掺杂的基极区域相反的极性的掺杂的背侧发射极区域。 发射体上的背面钝化层和图案化反射层形成光捕获背面镜。 叉指金属化图案位于太阳能电池的背面，并且永久增强为电池提供支撑。

公开(公告)号：EP2909866A4

公开(公告)日：2016-06-29

申请号：EP13847902

申请日：2013-10-16

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/042 ,  H01L31/0443 ,  H01L31/068

CPC classification number: H01L31/0443 ,  H01L27/1421 ,  H01L31/02008 ,  H01L31/0201 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  Y02B10/12 ,  Y02E10/50 ,  Y02E10/547

公开(公告)号：EP2856512A4

公开(公告)日：2015-12-16

申请号：EP13798110

申请日：2013-05-29

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER DAWN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2513960A4

公开(公告)日：2014-10-08

申请号：EP10842566

申请日：2010-12-15

Applicant: SOLEXEL INC

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L21/677 ,  H01L21/687

CPC classification number: H01L21/677 ,  H01L21/6838 ,  H01L21/6875

公开(公告)号：EP2499674A4

公开(公告)日：2014-07-23

申请号：EP10830677

申请日：2010-11-10

Applicant: SOLEXEL INC

Inventor： KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：WO2014071417A3

公开(公告)日：2014-11-06

申请号：PCT/US2013068599

申请日：2013-11-05

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/02245 ,  H01L31/0443 ,  H01L31/0445 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A trench isolation pattern partitions the semiconductor layer into electrically isolated isles on the electrically insulating backplane. A first metal layer having base and emitter electrodes is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.

Abstract translation: 根据所公开的主题的一个方面，提供了一种单片式太阳能电池。 该太阳能电池包括具有光接收正面的半导体层和与正面相对并且附接到电绝缘背板的背面。 沟槽隔离图案将半导体层分隔成电绝缘背板上的电隔离岛。 具有基极和发射极电极的第一金属层位于半导体层背面上。 提供电池互连且通过通孔插塞连接到第一金属层的图案化的第二金属层位于背板上。

公开(公告)号：WO2013126927A3

公开(公告)日：2013-11-21

申请号：PCT/US2013027826

申请日：2013-02-26

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN

IPC: H01L21/301 ,  B23K26/00 ,  H01L21/268

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：WO2012135395A3

公开(公告)日：2013-02-07

申请号：PCT/US2012031043

申请日：2012-03-28

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。

公开(公告)号：WO2011150397A3

公开(公告)日：2012-04-05

申请号：PCT/US2011038444

申请日：2011-05-27

Applicant: SOLEXEL INC ,  RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

Inventor： RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/042

CPC classification number: H01L31/0682 ,  B23K26/0624 ,  B23K26/08 ,  B23K26/389 ,  B23K26/40 ,  B23K2201/36 ,  B23K2203/172 ,  B23K2203/40 ,  B23K2203/50 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适合于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：WO2011133965A3

公开(公告)日：2012-02-02

申请号：PCT/US2011033706

申请日：2011-04-23

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

Inventor： DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate- based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

Abstract translation: 所公开的主题提供了一种用于通过利用也可用作有效ARC的双层钝化方案从基于晶体硅衬底的太阳能电池中的高效表面钝化获得超低表面复合速度的方法和结构。 双层钝化由湿化学氧化物的第一薄层或薄氢化非晶硅层构成。 第二层无定形氢化氮化硅膜沉积在湿化学氧化物或非晶硅膜的顶部。 然后进行该沉积，然后进行退火以进一步增强表面钝化。