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公开(公告)号:US20240002218A1
公开(公告)日:2024-01-04
申请号:US18130837
申请日:2023-04-04
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: B81C1/00 , H01L23/051 , H10N30/30 , B81B7/00
CPC classification number: B81C1/00277 , B81C1/00301 , H01L23/051 , H10N30/306 , B81B7/007 , B81B7/0058 , B81C1/00269 , B81B7/0035 , H01L2924/0002 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , B81B2201/0271
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US20190055121A1
公开(公告)日:2019-02-21
申请号:US16106649
申请日:2018-08-21
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: B81C1/00 , B81B7/00 , H01L41/113 , H01L23/051
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US20180282154A1
公开(公告)日:2018-10-04
申请号:US15685957
申请日:2017-08-24
Applicant: Kionix, Inc.
Inventor: Martin Heller , Jonah deWall , Andrew Hocking , Kristin Lynch , Sangtae Park
IPC: B81C1/00
CPC classification number: B81C1/00269 , B81C2201/013 , B81C2201/0171 , B81C2201/0197 , B81C2201/05 , B81C2203/0118
Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.
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公开(公告)号:US10053360B1
公开(公告)日:2018-08-21
申请号:US15685879
申请日:2017-08-24
Applicant: Kionix, Inc.
Inventor: Martin Heller
CPC classification number: B81C1/00047 , B81C1/00095 , B81C2201/0109 , B81C2201/0115 , B81C2201/0132 , B81C2201/0171 , B81C2201/0178
Abstract: A method of processing a semiconductor substrate having a first conductivity type includes, in part, forming a first implant region of a second conductivity type in the semiconductor substrate where the first implant region is characterized by a first depth, forming a second implant region of the first conductivity type in the semiconductor substrate where the second implant region is characterized by a second depth smaller than the first depth, forming a porous layer within the semiconductor substrate where the porous layer is adjacent the first implant region, and growing an epitaxial layer on the semiconductor substrate thereby causing the porous layer to collapse and form a cavity.
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公开(公告)号:US09908770B2
公开(公告)日:2018-03-06
申请号:US15317646
申请日:2015-05-29
Applicant: Robert Bosch GmbH
Inventor: David Bendes
CPC classification number: B81B7/0016 , B81B2203/0118 , B81B2203/053 , B81B2207/015 , B81C1/00682 , B81C2201/0171
Abstract: A micromechanical structure is described, including: at least one elastically deformable first area, which includes a defined piezoelectrically doped second area, at least in sections; at least one fourth area, into which the electrical charges generated in the second area may be conducted; and at least one third area connected electrically to the second and fourth area, in which an electrical current flowing through is convertible into thermal energy.
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公开(公告)号:US20180044176A1
公开(公告)日:2018-02-15
申请号:US15686480
申请日:2017-08-25
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US20170101310A1
公开(公告)日:2017-04-13
申请号:US15242437
申请日:2016-08-19
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.
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公开(公告)号:US09440845B2
公开(公告)日:2016-09-13
申请号:US14961760
申请日:2015-12-07
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L23/488 , H01L23/051 , B81B7/00 , B81C1/00 , H01L41/113
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
Abstract translation: 具有开口的半导体层和形成在开口中的MEMS谐振器设置在第一和第二基板之间以封装MEMS谐振器。 至少部分地在半导体层内并且至少部分地在第一衬底内形成从MEMS器件的开口延伸到外部的电接触。
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公开(公告)号:US20100295018A1
公开(公告)日:2010-11-25
申请号:US12864205
申请日:2008-01-30
Applicant: Shih-Yuan Wang , Michael Renne Ty Tan
Inventor: Shih-Yuan Wang , Michael Renne Ty Tan
CPC classification number: B81C1/00142 , B81C2201/0171 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L31/035281 , H01L31/105 , H01L2924/0002 , Y02E10/50 , H01L2924/00
Abstract: A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer.
Abstract translation: 纳米结构包括高导电微晶层,双极纳米线和另一层(18,30)。 高导电性微晶层包括微晶材料和金属。 双极纳米线的一端连接到高导电微晶层,另一端连接到另一层。
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公开(公告)号:US20070170532A1
公开(公告)日:2007-07-26
申请号:US11593429
申请日:2006-11-06
Applicant: Aaron Partridge , Markus Lutz , Pavan Gupta
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L29/84
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.
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