公开(公告)号：EP0829093A1

公开(公告)日：1998-03-18

申请号：EP96916907.0

申请日：1996-05-31

Applicant: Advanced Vision Technologies, Inc. ,  Potter, Michael D.

Inventor： POTTER, Michael D.

IPC: H01J9 ,  H01J3 ,  H01J29 ,  H01J31

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A lateral field-emission device (10) has a lateral emitter (100) substantially parallel to a substrate (20) and has a simplified anode structure (70). The anode's top surface is precisely spaced apart from the plane of the lateral emitter and receives electrons emitted by field emission from the edge of the lateral emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode.

公开(公告)号：EP0747920A2

公开(公告)日：1996-12-11

申请号：EP96109158.4

申请日：1996-06-07

Applicant: MOTOROLA, INC.

Inventor： Moyer, Curtis D. ,  Whalin, Jeffrey A. ,  Morrow, Wayne ,  Voight, Steven A.

IPC: H01J1/30 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J29/467 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A plurality of edge emitters (113) in a FED array include a plate shaped substrate (100) having parallel, laterally spaced apart grooves (103) formed in a first surface (101) and parallel, laterally spaced apart grooves (104) formed in the opposite surface (102) so that each second groove (104) crosses each first groove (103) at an angle. The combined depths (d1, d2) of the grooves (103, 104) is greater than the thickness of the plate substrate (100) so that an opening (105) is formed through the substrate (100) at each point where a second groove (104) crosses a first groove (103). Gate metal (107) is deposited on the surfaces in the openings (105) and emitter material (113) is deposited on the lands of the first surface (101) to form FED emitters in each opening (105).

Abstract translation: FED阵列中的多个边缘发射器（113）包括板状基板（100），该板状基板（100）具有形成在第一表面（101）中的平行的横向间隔开的凹槽（103）和平行的横向间隔开的凹槽（104） 相对表面（102），使得每个第二凹槽（104）以一定角度与每个第一凹槽（103）交叉。 槽（103,104）的组合深度（d1，d2）大于板基板（100）的厚度，使得在每个点处形成有通过基板（100）的开口（105），其中第二凹槽 （104）穿过第一凹槽（103）。 栅极金属（107）沉积在开口（105）的表面上，并且发射极材料（113）沉积在第一表面（101）的焊盘上，以在每个开口（105）中形成FED发射体。

公开(公告)号：JP4590474B2

公开(公告)日：2010-12-01

申请号：JP2008324463

申请日：2008-12-19

Applicant: キヤノン株式会社

Inventor： 研逸 岩田 ,  法彦 越智

IPC: H01J1/304 ,  H01J31/12

CPC classification number: H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

公开(公告)号：JP2010146916A

公开(公告)日：2010-07-01

申请号：JP2008324466

申请日：2008-12-19

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： NOZU KYOTA ,  IWATA KENICHI ,  KOBAYASHI TAMAKI ,  KITAMURA SHIN ,  SHIMAZU AKIRA

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for an electron-emitting element which has high electron-emitting efficiency and is highly reliable. SOLUTION: The manufacturing method for an electron-emitting element includes: a first process of preparing a first conductive film on at least a side face of an insulating layer having an upper face and the side face connected with the upper face; a second process of preparing a second conductive film from above the upper face over to above the side face of the first conductive film on the first conductive film; and a third process of etching the second conductive film. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有高电子发射效率和高可靠性的电子发射元件的制造方法。 解决方案：电子发射元件的制造方法包括：在具有上表面和与上表面连接的侧面的绝缘层的至少一个侧面上制备第一导电膜的第一工艺; 从所述第一导电膜上的所述第一导电膜的上表面上方到所述第一导电膜的侧面上方制备第二导电膜的第二工序; 以及蚀刻所述第二导电膜的第三工艺。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010146913A

公开(公告)日：2010-07-01

申请号：JP2008324463

申请日：2008-12-19

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： OCHI NORIHIKO ,  IWATA KENICHI

IPC: H01J1/304 ,  H01J31/12

CPC classification number: H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable electron-emitting element having high electron-emitting efficiency and equipped with a resistive layer having sufficient resistivity while suppressing increase in an occupancy area. SOLUTION: The electron-emitting element has at least a cathode electrode, an electron-emitting body electrically connected to the cathode electrode, and the resistive layer formed between the cathode electrode and the electron-emitting body. The resistive layer is constituted of the same material as that of the electron-emitting body, and a membrane density of the resistive layer is lower than that of the electron-emitting body. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有高电子发射效率的高度可靠的电子发射元件，并且在抑制占用面积增加的同时，具有足够的电阻率的电阻层。 解决方案：电子发射元件至少具有阴极电极，与阴极电连接的电子发射体以及形成在阴极和电子发射体之间的电阻层。 电阻层由与电子发射体相同的材料构成，电阻层的膜密度低于电子发射体的膜密度。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：US20180012723A1

公开(公告)日：2018-01-11

申请号：US15638237

申请日：2017-06-29

Applicant: THALES

Inventor： Jean-Paul MAZELLIER ,  Lucie SABAUT

IPC: H01J35/06

CPC classification number: H01J35/065 ,  H01J1/15 ,  H01J1/312 ,  H01J21/105 ,  H01J23/04 ,  H01J2201/30423 ,  H01J2201/30434 ,  H01J2235/068

Abstract: A vacuum electron tube comprises at least one electron-emitting cathode and at least one anode arranged in a vacuum chamber, the cathode having a planar structure comprising a substrate comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of the nanotube or nanowire elements substantially parallel to the plane of the substrate, and at least one first connector electrically linked to at least one nanotube or nanowire element so as to be able to apply a first electrical potential to the nanowire or nanotube element.

公开(公告)号：US09331189B2

公开(公告)日：2016-05-03

申请号：US13888493

申请日：2013-05-07

Applicant: UNIVERSITY OF PITTSBURGH—OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

Inventor： Hong Koo Kim ,  Siwapon Srisonphan

IPC: H01L29/92 ,  H01L29/76 ,  H01L29/66 ,  H01L29/94 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/113 ,  H01L27/144 ,  H01J3/02 ,  H01J1/304

CPC classification number: H01J1/3046 ,  H01J1/3042 ,  H01J3/022 ,  H01J19/24 ,  H01J2201/30423 ,  H01L27/1446 ,  H01L27/146 ,  H01L29/66181 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/94 ,  H01L31/022466 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/101 ,  H01L31/113 ,  Y02E10/50

Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

Abstract translation: 一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。 至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。 在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子 由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

公开(公告)号：US20150364287A1

公开(公告)日：2015-12-17

申请号：US14738949

申请日：2015-06-15

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： YANG WEI ,  SHOU-SHAN FAN

IPC: H01J9/02

CPC classification number: H01J9/025 ,  B82Y40/00 ,  B82Y99/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/939

Abstract: A method of making a field emitter includes following steps. A carbon nanotube layer is provided, and the carbon nanotube layer includes a first surface and a second surface opposite to each other. A carbon nanotube composite layer is formed via electroplating a first metal layer on the first surface and electroplating a second metal layer on the second surface. A first carbon nanotube layer and a second carbon nanotube layer is formed by separating apart the carbon nanotube composite layer, wherein a fracture surface is formed in the carbon nanotube composite layer, a number of first carbon nanotubes in the first carbon nanotube layer are exposed from the fracture surface, and a number of second carbon nanotubes in the second carbon nanotube layer are exposed from the fracture surface.

Abstract translation: 制造场发射体的方法包括以下步骤。 提供碳纳米管层，碳纳米管层包括彼此相对的第一表面和第二表面。 通过在第一表面上电镀第一金属层并在第二表面上电镀第二金属层来形成碳纳米管复合层。 第一碳纳米管层和第二碳纳米管层通过分离碳纳米管复合层形成，其中在碳纳米管复合层中形成断裂面，第一碳纳米管层中的多个第一碳纳米管暴露于 断裂面和第二碳纳米管层中的多个第二碳纳米管从断裂面露出。

公开(公告)号：US20150060757A1

公开(公告)日：2015-03-05

申请号：US14471713

申请日：2014-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-gu LEE ,  Shang-hyeun PARK ,  Yong-chul KIM ,  Chang-soo LEE ,  Do-yoon KIM

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J35/065 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.

Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或包括覆盖该开口的石墨烯片的栅电极。 制造栅电极的方法可以包括：在导电膜的一个表面上形成石墨烯薄膜; 在所述导电膜的另一表面上形成具有蚀刻开口的掩模层，其中所述蚀刻开口暴露所述导电膜的一部分; 通过蚀刻开口部分去除导电膜以部分地暴露石墨烯薄膜; 和/或去除掩模层。

公开(公告)号：US08177987B2

公开(公告)日：2012-05-15

申请号：US12637978

申请日：2009-12-15

Applicant: Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

Inventor： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

IPC: H01B13/00

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

Abstract translation: 一种电子发射器件的制造方法，包括在包括侧面的绝缘层和与侧面连接的顶面的侧面上形成第一导电膜; 从所述顶表面到所述侧表面和所述第一导电膜上形成第二导电膜; 并蚀刻第二导电膜。