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    52.
    发明专利
    未知

    公开(公告)号：DE69432670T2

    公开(公告)日：2004-03-11

    申请号：DE69432670

    申请日：1994-11-18

    Applicant: MARTIN FREDERICK WIGHT

    Inventor： MARTIN FREDERICK WIGHT

    IPC: H01J37/145 ,  A61M1/14 ,  G21K1/08 ,  H01J3/12 ,  H01J3/26 ,  H01J23/08 ,  H01J29/58 ,  H01J37/153

    Abstract: A particle-beam column comprising a needle-type ions source (1) such as a liquid metal ion source, one or more round lenses (2), and a plurality of interleaved quadrupole lenses (14, 16). Also an ion-beam column comprising a liquid alloy ion source (1), interleaved quadrupole lenses (14, 16), and a Wien velocity filter (22). Such columns produce a more finely focused beam than columns based only on electrostatic lenses, and allow increased lens apertures and larger beam currents.

    HIGH ACCURACY BEAM BLANKER
    53.
    发明专利
    HIGH ACCURACY BEAM BLANKER 未知

    公开(公告)号：CA2069767C

    公开(公告)日：2001-04-10

    申请号：CA2069767

    申请日：1992-05-28

    IPC: H01J9/44 ,  H01J37/04 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30 ,  H01J3/26

    Abstract: The accuracy of a double-deflection beam blanker is dramatically improved for all blanker voltages by using provided, closed-form, trajectory equations to determine the blanker geometric parameters and compensating for fringe-field affects in order to precisely determine the delay line length for control of an electron or ion beam. This delay line length is maintained by placing alignment apertures above and below the blanker.

    59.
    发明专利
    未知

    公开(公告)号：BR7605542A

    公开(公告)日：1977-08-09

    申请号：BR7605542

    申请日：1976-08-24

    Applicant: RCA CORP

    Inventor： STANLEY T

    IPC: G11C11/30 ,  H01J29/46 ,  H01J31/12 ,  H01J3/26 ,  H01J3/02

    Abstract: An evacuated envelope has a rectangular addressing section and a gun section at one edge of the addressing section. The addressing section includes front and back walls in closely spaced, parallel relation, and a plurality of spaced, parallel support walls between the front and back walls forming a plurality of parallel channels. The gun section extends across one end of the channels and includes gun structure which will selectively direct electrons along each of the channels. In each of the channels are guide means to confine the electrons in a beam which is spaced from the walls of the channel and guide the beam along the length of the channel. Deflection means are provided which permit selective deflection of the electron beams toward a target, e.g. a phosphor screen, which is disposed along the inner surface of the front wall.

    60.
    发明专利
    未知

    公开(公告)号：DE2441421A1

    公开(公告)日：1975-03-13

    申请号：DE2441421

    申请日：1974-08-29

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN ,  WOODARD OLLIE CLIFTON

    IPC: H01J37/147 ,  H01J37/244 ,  H01J37/304 ,  H01L21/027 ,  H01J3/26 ,  H01L21/26

    Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. During various times, e.g., the target stage is moving mechanically from one chip to the next one, the electron beam is blanked. The blanking aperture plate in the electron beam column is provided with a second sensing aperture. During a blanked phase, the condensor lens images the electron source on the sensing aperture of the blanking aperture plate. A sensing plate disposed beneath the blanking aperture monitors the beam current and provides a signal to an alignment servo. Error correction is carried out by moving the beam in small increments in two orthogonal directions until the sensing plate reads a maximum current.

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