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    COMPENSATED MAGNETIC DEFLECTION COIL FOR ELECTRON BEAM LITHOGRAPHY SYSTEMS
    2.
    发明专利
    COMPENSATED MAGNETIC DEFLECTION COIL FOR ELECTRON BEAM LITHOGRAPHY SYSTEMS 未知

    公开(公告)号：DE3065272D1

    公开(公告)日：1983-11-17

    申请号：DE3065272

    申请日：1980-06-18

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN ,  STURANS MARIS ANDRIS

    IPC: H01J37/09 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027

    Abstract: A toroidal magnetic deflection coil for an electron beam lithography system which is compensated for deflection placement errors that normally result from eddy currents generated within the coil windings by deflection current inputs to the coil. The compensation is achieved through addition of passive conductive material along the outer periphery of the coil. The conductive material or layer is arranged close to the outer arms of the toroidal coil windings, and thereby compensates the eddy currents within the deflection coils generated by the deflection currents in the inner arms. The compensating material can be utilized to compensate for beam drag which results from the driving circuit settling time and the inductive or capacitive coupling as well, by adding more material of appropriate dimensions.

    3.
    发明专利
    未知

    公开(公告)号：DE3852097D1

    公开(公告)日：1994-12-15

    申请号：DE3852097

    申请日：1988-12-06

    Applicant: IBM

    Inventor： GROVES TIMOTHY ROBINSON ,  PFEIFFER HANS CHRISTIAN ,  STICKEL WERNER ,  STURANS MARIS ANDRIS

    IPC: H01J37/04 ,  H01J37/141 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027 ,  H01J37/317

    Abstract: A two stage, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to tghe target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.

    APPARATUS FOR CONTACTLESS TESTING OF ELECTRICAL CONNECTIONS
    4.
    发明专利
    APPARATUS FOR CONTACTLESS TESTING OF ELECTRICAL CONNECTIONS 未知

    公开(公告)号：DE3272522D1

    公开(公告)日：1986-09-18

    申请号：DE3272522

    申请日：1982-04-15

    Applicant: IBM

    Inventor： LANGNER GUNTHER OTTO ,  PFEIFFER HANS CHRISTIAN

    IPC: H01J31/08 ,  G01R31/02 ,  G01R31/302 ,  G01R31/305 ,  H01J37/28 ,  H01L21/66 ,  H05K3/00 ,  G01R31/28

    Abstract: The system tests the continuity of electrical conductors extending through an insulating layer without contact. A flood gun (11) irradiates one side of the body (18) to charge the exposed conductors to a given potential. A steerable electron beam (14) scans the front side to generate secondary electron emission from those conductors, which secondary emission is measured by a detector (24). The secondary emission is enhanced from conductors with conductivity between front side and back side as a result of the surface potential established by the rear flood beam (22). The secondary emission varies depending on the state of continuity in the three-dimensional network of conductors and produces signals at the detector (24) which allow clear discrimination between uninterrupted and interrupted conductors. The system is applicable for unfired ceramics where contact destroys the specimen.

    METHOD AND APPARATUS FOR CONTACTLESS ELECTRICAL TESTING
    5.
    发明专利
    METHOD AND APPARATUS FOR CONTACTLESS ELECTRICAL TESTING 未知

    公开(公告)号：DE3266126D1

    公开(公告)日：1985-10-17

    申请号：DE3266126

    申请日：1982-04-15

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN ,  SIMPSON ROBERT ARTHUR ,  STICKEL WERNER

    IPC: H01L21/66 ,  G01Q30/02 ,  G01R31/02 ,  G01R31/302 ,  G01R31/305 ,  H05K3/46 ,  G01R31/28

    Abstract: An electron beam system for non contact testing of three dimensional networks of conductors embedded in dielectric material, specifically detection of open and short circuit conditions. Top to bottom and top to top surface wiring is tested electrically without making physical electrical contact. The system comprises two flood beams and a focus probe beam wih one flood beam located at either side of the specimen. Proper choice of acceleration potentials, beam currents and dwell times of the beams allow alteration of the secondary electron emission from the specimen in such a way that electrical properties of the conductor networks can be measured directly. The difference in secondary electron emission resulting from different surface potentials is detected as a strong signal which allows clear discrimination between uninterrupted and interrupted as well as shorted pairs of conductors. This testing system can be applied to the high speed testing of advanced VLSI packaging substrates as well as to the greensheets, sublaminates, and laminates from which they are fabricated.

    7.
    发明专利
    未知

    公开(公告)号：DE2441421A1

    公开(公告)日：1975-03-13

    申请号：DE2441421

    申请日：1974-08-29

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN ,  WOODARD OLLIE CLIFTON

    IPC: H01J37/147 ,  H01J37/244 ,  H01J37/304 ,  H01L21/027 ,  H01J3/26 ,  H01L21/26

    Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. During various times, e.g., the target stage is moving mechanically from one chip to the next one, the electron beam is blanked. The blanking aperture plate in the electron beam column is provided with a second sensing aperture. During a blanked phase, the condensor lens images the electron source on the sensing aperture of the blanking aperture plate. A sensing plate disposed beneath the blanking aperture monitors the beam current and provides a signal to an alignment servo. Error correction is carried out by moving the beam in small increments in two orthogonal directions until the sensing plate reads a maximum current.

    8.
    发明专利
    未知

    公开(公告)号：DE69432098T2

    公开(公告)日：2003-10-23

    申请号：DE69432098

    申请日：1994-11-24

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN ,  STICKEL WERNER

    IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302 ,  H01J37/304 ,  H01J37/30

    Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

    9.
    发明专利
    未知

    公开(公告)号：DE3852097T2

    公开(公告)日：1995-05-24

    申请号：DE3852097

    申请日：1988-12-06

    Applicant: IBM

    Inventor： GROVES TIMOTHY ROBINSON ,  PFEIFFER HANS CHRISTIAN ,  STICKEL WERNER ,  STURANS MARIS ANDRIS

    IPC: H01J37/04 ,  H01J37/141 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027 ,  H01J37/317

    Abstract: A two stage, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to tghe target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.

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