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公开(公告)号：KR1020130041719A
公开(公告)日：2013-04-25
申请号：KR1020120023953
申请日：2012-03-08
Applicant: 한국전자통신연구원
Abstract: PURPOSE: An image reproduction device and method are provided to use quantification analysis of brain signals, thereby reproducing images recognized through a brain. CONSTITUTION: A brain signal measurement unit(120) measures brain signals from a human who recognizes reproduced images. A brain signal analysis unit(130) analyzes the brain signals. A feature point extraction unit(140) extracts a feature point from the analyzed brain signals. An image selection unit(150) selects images corresponding to the feature point. A brain image reproduction unit(160) finds an average of the selected images and reproduces the images recognized through a brain. [Reference numerals] (110) Image playback unit; (111) Image DB; (120) Brain signal measurement unit; (130) Brain signal analysis unit; (140) Feature point extraction unit; (150) Image selection unit; (160) Brain image reproduction unit; (170) Image comparison analyzing unit; (AA) Image signal; (BB) Playing signal; (CC) Reproduction image analyzing a brain signal(comparison analyzing result);
Abstract translation: 目的：提供一种图像再现装置和方法，用于对脑信号进行定量分析，从而再现通过脑识别的图像。 构成：大脑信号测量单元（120）测量识别再现图像的人的脑信号。 脑信号分析单元（130）分析脑信号。 特征点提取单元（140）从所分析的脑信号中提取特征点。 图像选择单元（150）选择与特征点对应的图像。 脑图像再现单元（160）找到所选择的图像的平均值，并再现通过大脑识别的图像。 （附图标记）（110）图像重放单元; （111）图像DB; （120）脑信号测量单元; （130）脑信号分析单元; （140）特征点提取单元; （150）图像选择单元; （160）脑图像再现单元; （170）图像比较分析单元; （AA）图像信号; （BB）播放信号; （CC）分析脑信号的再现图像（比较分析结果）;
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公开(公告)号：KR1020120063854A
公开(公告)日：2012-06-18
申请号：KR1020100125011
申请日：2010-12-08
Applicant: 한국전자통신연구원
IPC: H01L27/146
CPC classification number: H01L27/14629 , H01L27/14621 , H01L27/14627
Abstract: PURPOSE: An image sensor and a manufacturing method thereof are provided to eliminate a dead zone by connecting upper side micro lenses and lower side micro lenses to the unit pixel boundary of pixel regions. CONSTITUTION: A substrate(10) comprises a plurality of pixel regions arranged as a matrix shape. A plurality of photoelectric conversion elements(20) is formed in the plurality of pixel regions. A plurality of optical waveguide layers(50) is formed on the plurality of photoelectric conversion elements. A color filter layer(70) is formed on the plurality of optical waveguide layers. An upper side micro lens(80) and a lower side micro lens(60) are respectively formed on the upper side and the lower side of the color filter layer. The upper side micro lens and the lower side micro lens are alternately arranged on the plurality of photoelectric conversion elements to a longitudinal direction and a lateral direction of the pixel region.
Abstract translation: 目的：提供一种图像传感器及其制造方法，通过将上侧微透镜和下侧微透镜连接到像素区域的单位像素边界来消除死区。 构成：衬底（10）包括排列成矩阵形状的多个像素区域。 在多个像素区域中形成多个光电转换元件（20）。 在多个光电转换元件上形成多个光波导层（50）。 在多个光波导层上形成滤色器层（70）。 分别在滤色器层的上侧和下侧形成上侧微透镜（80）和下侧微透镜（60）。 上侧微透镜和下侧微透镜沿着像素区域的纵向和横向方向交替布置在多个光电转换元件上。
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公开(公告)号：KR1020120063275A
公开(公告)日：2012-06-15
申请号：KR1020100124377
申请日：2010-12-07
Applicant: 한국전자통신연구원
IPC: G06F19/00
CPC classification number: G06F17/3087
Abstract: PURPOSE: A visual information processing system and a method thereof are provided to supply information of a user by storing and managing interest of a user in database. CONSTITUTION: A terminal(10) stores video information inputted from a camera device(20) and transmits the video information to a processing server(40). The terminal receives event information from the processing server and matches the video information with event information. The processing server detects an event from the video information.
Abstract translation: 目的：提供视觉信息处理系统及其方法，通过存储和管理用户对数据库的兴趣来提供用户的信息。 构成：终端（10）存储从相机装置（20）输入的视频信息，并将视频信息发送到处理服务器（40）。 终端从处理服务器接收事件信息，并将视频信息与事件信息相匹配。 处理服务器从视频信息中检测事件。
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公开(公告)号：KR101111960B1
公开(公告)日：2012-06-12
申请号：KR1020080122650
申请日：2008-12-04
Applicant: 한국전자통신연구원
CPC classification number: H01L31/035281 , H01L31/032 , H01L31/0392 , H01L31/03926 , Y02E10/50
Abstract: 본 발명은 제 1 플렉서블 기판; 상기 제 1 플렉서블 기판 상에 위치하는 투명전극; 상기 투명전극 상에 위치하고, 전이금속 산화물 또는 반금속 산화물을 포함하는 제 1 나노구조물; 상기 제 1 나노구조물 상에 위치하는 제 2 나노구조물; 상기 제 2 나노구조물 상에 위치하는 제 2 플렉서블 기판; 및 상기 제 1 및 제 2 플렉서블 기판을 봉지하는 봉지층을 포함하는 것을 특징으로 하는 플렉서블 에너지 변환소자 및 이의 제조방법에 관한 것이다.
유기용매, 전이금속, 반금속, 나노구조물, 습식-
公开(公告)号：KR1020110062684A
公开(公告)日：2011-06-10
申请号：KR1020090119475
申请日：2009-12-04
Applicant: 한국전자통신연구원
Inventor： 김상협
IPC: A61N1/05 , A61B5/0478
Abstract: PURPOSE: An implantable electrode tip and a manufacturing method thereof are provided to effectively overcome the failure of brain function using a nanostructure. CONSTITUTION: An implantable electrode tip comprises an electrode tip(110) and an electrode tip supporting part(120). The electrode tip is comprised of a nanostructure. The electrode tip supporting part supports the nanostructure. A manufacturing method of the implantable electrode tip comprises: a step of removing a thin film and a thick film from the surface of the electrode tip; a step of manufacturing a nano-pore; and a step of manufacturing an electrode tip.
Abstract translation: 目的：提供可植入电极头及其制造方法，以有效地克服使用纳米结构的脑功能的失败。 构成：可植入电极尖端包括电极尖端（110）和电极尖端支撑部分（120）。 电极尖端由纳米结构组成。 电极头支撑部分支撑纳米结构。 可植入电极头的制造方法包括：从电极头的表面去除薄膜和厚膜的步骤; 制造纳米孔的步骤; 以及制造电极头的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020100065678A
公开(公告)日：2010-06-17
申请号：KR1020080124133
申请日：2008-12-08
Applicant: 한국전자통신연구원
CPC classification number: A61N1/0534
Abstract: PURPOSE: A brain stimulation electrode of the RF base selective functional transplantation type is provided, which can overcome the brain dysfunction by generating the metergasis of brain nerves about the innate disorders and acquired disorders from various reasons. CONSTITUTION: A brain stimulation electrode of the RF base selective functional transplantation type includes: a step(S10) of forming a supporting part with the wire; a step(S20) of forming an electrode tip by raising the nanostructures from the supporting part; a step(S30) of coating the electrode tip and supporting part with the transparent conductive film; a step(S40) of forming the insulating protection layer on the supporting part; and a step(S50) of interlinking the power supply unit and the supporting part transmitting and receiving each frequency using the wireless telecommunication.
Abstract translation: 目的：提供RF基因选择性功能移植类型的脑刺激电极，可以通过从各种原因产生关于先天性疾病和获得性疾病的脑神经的metergasis来克服脑功能障碍。 构成：RF基极选择性功能移植型的脑刺激电极包括：利用线形成支撑部的步骤（S10） 通过从支撑部分升高纳米结构来形成电极头的步骤（S20）; 使用透明导电膜涂布电极头和支撑部的工序（S30） 在所述支撑部上形成所述绝缘保护层的工序（S40） 以及使用无线电信将电源单元和支持部件互连到发送和接收每个频率的步骤（S50）。
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公开(公告)号：KR100799570B1
公开(公告)日：2008-01-31
申请号：KR1020060053897
申请日：2006-06-15
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
Abstract: 본 발명은 기판 상에 비촉매 금속 아일랜드를 형성하고, 상기 비촉매 금속 아일랜드 주위를 둘러싸게 촉매 금속 도넛을 형성하고, 상기 촉매 금속 도넛 상에 실리콘 나노튜브를 성장시켜 실리콘 나노튜브를 제조한다. 본 발명은 촉매 금속 도넛을 이용하여 실리콘 나노튜브를 효과적으로 성장시킬 수 있다.
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公开(公告)号：KR1020070119358A
公开(公告)日：2007-12-20
申请号：KR1020060053897
申请日：2006-06-15
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
Abstract: A method for manufacturing silicon nanotubes is provided to produce silicon nanotubes more effectively by growing silicon nanotubes using doughnut-shape catalytic metal. A method for manufacturing silicon nanotubes includes the steps of: forming non-catalytic metal islands(104) on a substrate(100); forming catalytic metal doughnuts(106) to surround the non-catalytic metal islands; and growing silicon nanotubes(108) on the catalytic metal doughnuts. The non-catalytic metal island is formed by forming a non-catalytic metal layer on the substrate, followed by heat-treating the non-catalytic metal layer. Further, the non-catalytic metal layer is chrome, platinum or vanadium.
Abstract translation: 提供一种制造硅纳米管的方法，通过使用环形催化金属生长硅纳米管，更有效地制造硅纳米管。 制造硅纳米管的方法包括以下步骤：在衬底（100）上形成非催化金属岛（104）; 形成催化金属甜甜圈（106）以包围所述非催化金属岛; 以及在催化金属甜甜圈上生长硅纳米管（108）。 通过在基板上形成非催化金属层，然后对非催化金属层进行热处理，形成非催化金属岛。 此外，非催化金属层是铬，铂或钒。
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公开(公告)号：KR100723882B1
公开(公告)日：2007-05-31
申请号：KR1020060053896
申请日：2006-06-15
Applicant: 한국전자통신연구원
Abstract: 본 발명은 기판 상에 실리콘 나노점을 갖는 실리콘 나노점 박막을 형성하고, 상기 실리콘 나노점을 핵생성층으로 하여 상기 실리콘 나노점 박막 상에서 실리콘 나노 와이어를 성장시킨다. 본 발명은 금속 촉매 아일랜드를 사용하지 않고 실리콘 질화물 기저체 내에 실리콘 나노점이 형성된 실리콘 나노점 박막을 핵생성층으로 하여 실리콘 나노와이어를 제조할 수 있다.
Abstract translation: 本发明是生长在硅纳米点的硅纳米线和所述硅纳米点的薄膜，并且形成具有在衬底上的成核层的纳米硅纳米点的硅薄膜。 本发明能够制造使用硅纳米薄膜硅形成于硅氮化物的基体，而不使用在爱尔兰成核层的金属催化剂纳米点的硅纳米线。
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