中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

142 records (took 0.022 seconds)

    자기정렬 전계 효과 트랜지스터 구조체
    61.
    发明公开
    자기정렬 전계 효과 트랜지스터 구조체 无效
    自对准场效应晶体管结构

    公开(公告)号：KR1020100073247A

    公开(公告)日：2010-07-01

    申请号：KR1020080131869

    申请日：2008-12-23

    Applicant: 한국전자통신연구원

    Inventor： 도이미 ,  백규하

    IPC: H01L21/335 ,  H01L29/78 ,  B82Y40/00

    CPC classification number: H01L29/66742 ,  H01L29/42384 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66575

    Abstract: PURPOSE: A self aligned field effect transistor structure is provided to improve operation speed by removing a photoresist residue between a source/drain and a substrate and reducing contact resistance between them. CONSTITUTION: An active region(122) is formed on a substrate(110). An uneven gate insulation pattern(142) is formed on the active region. The gate insulation pattern comprises a side wall and a bottom wall. A gate electrode(152) is formed inside the gate insulation pattern. A source/drain(154) is formed on the substrate adjacent to the gate insulation pattern.

    Abstract translation: 目的：提供自对准场效应晶体管结构，通过去除源极/漏极和衬底之间的光致抗蚀剂残留物并降低它们之间的接触电阻来提高操作速度。 构成：在衬底（110）上形成有源区（122）。 在有源区上形成不均匀栅极绝缘图案（142）。 栅极绝缘图案包括侧壁和底壁。 栅极电极（152）形成在栅极绝缘图案内部。 源极/漏极（154）形成在与栅极绝缘图案相邻的衬底上。

    반도체 장치의 제조 방법
    62.
    发明公开
    반도체 장치의 제조 방법 有权
    制造半导体器件的方法

    公开(公告)号：KR1020100058069A

    公开(公告)日：2010-06-03

    申请号：KR1020080116745

    申请日：2008-11-24

    Applicant: 한국전자통신연구원

    Inventor： 심재엽 ,  백규하 ,  도이미

    IPC: H01L21/336 ,  H01L29/78

    CPC classification number: H01L29/42376 ,  H01L21/28114

    Abstract: PURPOSE: A manufacturing method of a semiconductor device is provided to obtain a T-shape gate electrode including a short leg part a low resistance. CONSTITUTION: A first photosensitive pattern is formed on a substrate(100). A second photosensitive pattern(122) exposing a part of the first photosensitive pattern is formed. A third photosensitive pattern with a first opening(134), which exposes a second photosensitive layer that is around the first photosensitive layer, is formed. The first photosensitive pattern exposed by the first opening is removed. A second opening(124) which exposes the substrate is formed. A T-shape gate electrode(146) with a leg part(142) and a head part(144), which fill the second opening, is formed.

    Abstract translation: 目的：提供一种半导体器件的制造方法，以获得包括具有低电阻的短脚部分的T形栅电极。 构成：在基板（100）上形成第一感光图案。 形成暴露第一感光图案的一部分的第二感光图案（122）。 形成具有第一开口（134）的第三感光图案，其暴露第一感光层周围的第二感光层。 去除由第一开口露出的第一感光图案。 形成露出基板的第二开口（124）。 形成有填充第二开口的具有腿部（142）和头部（144）的T形栅电极（146）。

    플렉시블 기판의 세정 방법
    63.
    发明授权
    플렉시블 기판의 세정 방법 失效
    柔性基材清洗方法

    公开(公告)号：KR100879728B1

    公开(公告)日：2009-01-22

    申请号：KR1020080116800

    申请日：2008-11-24

    Applicant: 한국전자통신연구원

    Inventor： 김기현 ,  서경수 ,  백규하 ,  유인규 ,  강승열 ,  안성덕 ,  김철암

    IPC: H01L21/304 ,  B08B3/00 ,  G02F1/13

    Abstract: 본 발명은 유연한 기판을 세정하기 위한 새로운 세정 방법에 관한 것이다. 본 발명의 플렉시블 기판의 세정 방법은 플렉시블 기판을 넣고 플렉시블 기판의 양쪽 주면 상에 각각 위치하는 회전식 제1 롤러를 이용해 플렉시블 기판의 양쪽 주면에 부착된 불순물을 점착력을 이용하여 떼어내는 단계와, 제1 롤러에 비해 상대적으로 큰 점착력을 가진 회전식 제2 롤러를 이용하여 제1 롤러로부터 제2 롤러로 불순물을 전사시켜 제거하는 단계를 포함한다.
    플렉시블 기판, 세정, 플렉시블 소자, 플렉시블 디스플레이

    ＯＬＥＤ 소자
    64.
    发明授权
    ＯＬＥＤ 소자 失效
    有机发光二极管器件

    公开(公告)号：KR100835988B1

    公开(公告)日：2008-06-09

    申请号：KR1020070054496

    申请日：2007-06-04

    Applicant: 한국전자통신연구원

    Inventor： 도이미 ,  백규하 ,  이정익 ,  양용석 ,  정승묵 ,  추혜용 ,  박상희 ,  황치선

    IPC: C09K11/06

    Abstract: An organic light emitting diode device is provided to increase a luminous efficiency through a balanced injection of charges and to ensure excellent durability and a long life. An organic light emitting diode device includes a substrate(10), an anode(20) formed on the substrate, a first organic thin film layer(A) formed on the anode, an organic light emitting layer(50) formed on the first organic thin film layer, a second organic thin film layer(B) formed on the organic light emitting layer, and a cathode(90) formed on the second organic thin film layer. The first organic thin film layer and the second organic thin film layer are mono-layered or multi-layered, respectively. At least a part of the first organic thin film layer and the second organic thin film layer is doped or stacked with an insulating material.

    Abstract translation: 提供一种有机发光二极管装置，通过平衡地注入电荷来提高发光效率，并确保优异的耐久性和长的使用寿命。 有机发光二极管装置包括基板（10），形成在基板上的阳极（20），在阳极上形成的第一有机薄膜层（A），形成在第一有机层上的有机发光层（50） 薄膜层，形成在有机发光层上的第二有机薄膜层（B）和形成在第二有机薄膜层上的阴极（90）。 第一有机薄膜层和第二有机薄膜层分别是单层或多层的。 第一有机薄膜层和第二有机薄膜层的至少一部分被绝缘材料掺杂或层叠。

    자기 정렬된 유기물 전계 효과 트랜지스터 및 그 제조 방법
    65.
    发明授权
    자기 정렬된 유기물 전계 효과 트랜지스터 및 그 제조 방법 有权
    自对准有机场效应晶体管及其制造方法

    公开(公告)号：KR100817215B1

    公开(公告)日：2008-03-27

    申请号：KR1020060119863

    申请日：2006-11-30

    Applicant: 한국전자통신연구원

    Inventor： 양용석 ,  추혜용 ,  김성현 ,  구재본 ,  임상철 ,  김철암 ,  백규하

    IPC: H01L21/336 ,  H01L29/78

    CPC classification number: H01L51/055 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/105

    Abstract: A self-aligned organic FET(field effect transistor) is provided to reduce parasitic capacitance by using a photosensitive polymer thin film as a gate electrode and by preventing a gate electrode from overlapping a source/drain electrode. A gate electrode is formed on a substrate(201) by using a photosensitive polymer thin film. A gate insulation layer(203) is formed on the substrate and the gate electrode. A source electrode(206) and a drain electrode(207) are formed on the gate insulation layer at both sides of a channel region in a manner that doesn't overlap the gate electrode. An organic semiconductor layer is formed on the gate insulation layer in the channel region. The gate insulation layer can be made of an organic or inorganic material with transparency. A transparent electrode can be used as the source electrode and the drain electrode.

    Abstract translation: 提供了自对准的有机FET（场效应晶体管），通过使用光敏聚合物薄膜作为栅电极并防止栅电极与源/漏电极重叠来减小寄生电容。 通过使用感光性聚合物薄膜，在基板（201）上形成栅电极。 在基板和栅电极上形成栅极绝缘层（203）。 源极电极（206）和漏电极（207）以不与栅电极重叠的方式形成在沟道区两侧的栅极绝缘层上。 在沟道区域的栅极绝缘层上形成有机半导体层。 栅极绝缘层可以由具有透明性的有机或无机材料制成。 可以使用透明电极作为源电极和漏电极。

    유기 박막 트랜지스터 제조 방법
    68.
    发明公开
    유기 박막 트랜지스터 제조 방법 无效
    有机薄膜晶体管制造方法

    公开(公告)号：KR1020070061246A

    公开(公告)日：2007-06-13

    申请号：KR1020060074493

    申请日：2006-08-08

    Applicant: 한국전자통신연구원

    Inventor： 윤선진 ,  임정욱 ,  이진호 ,  백규하 ,  도이미

    IPC: H01L21/205 ,  H01L29/786

    CPC classification number: H01L51/0525

    Abstract: A method for fabricating an organic thin film transistor is provided to minimize deterioration of an organic layer by minimizing substrate heating effect. A source gas is absorbed onto a surface of a substrate by implanting the source gas into an inside of a reactor(S10). A source gas purging process is performed to purge the source gas absorbed onto the substrate or the remaining source gas within the reactor(S20). An inorganic oxide layer is formed by supplying an oxygen gas and generating plasma(S30). The oxygen gas and the plasma are intercepted(S40). A purge gas supply process is performed to purge the reactive residues and the remaining gas by supplying the purge gas(S50).

    Abstract translation: 提供一种用于制造有机薄膜晶体管的方法，以通过最小化衬底加热效应来最小化有机层的劣化。 通过将源气体注入到反应器的内部，源气体被吸收到基板的表面上（S10）。 进行源气体净化处理以清除吸收到基板上的源气体或反应器内的剩余源气体（S20）。 通过供给氧气并产生等离子体形成无机氧化物层（S30）。 截断氧气和等离子体（S40）。 进行净化气体供给处理以通过供给吹扫气体来清除反应性残留物和剩余气体（S50）。

Patent Agency Ranking