公开(公告)号：KR1020050055205A

公开(公告)日：2005-06-13

申请号：KR1020030088260

申请日：2003-12-05

Applicant: 한국전자통신연구원

Inventor： 송정호 ,  이철욱 ,  김기수 ,  백용순

IPC: H01S5/227

CPC classification number: H01S5/227 ,  H01S5/209 ,  H01S5/223 ,  H01S5/3211 ,  H01S5/3213 ,  H01S2301/18

Abstract: 본 발명은 BH(Buried Heterostructure) 레이저에서 능동 도파로 밖으로 흐르는 누설전류를 차단하기 위하여 상부 클래드의 폭을 작게하여 저항값을 증가시킨다. 전류차단층에 걸리는 전압이 감소되어 누설전류가 차단됨으로써 주입된 전류에 대한 광 출력의 비가 향상된다. 본 발명은 반도체층을 형성한 후 도파로 중심으로부터 일정한 폭만 남기고 식각하여 상부 클래드를 형성한다. 식각에 의해 전극과 전류차단층이 아주 얇은 폭의 반도체층으로 연결되는데, 이 연결 부위는 큰 전기적 저항값을 가지므로 전류차단층에 걸리는 전압을 감소시킨다. 따라서 전류차단층으로 흐르는 누설전류를 억제시킬 수 있다. 소자의 제작을 용이하게 하기 위하여 p형 반도체층을 성장시키기 전에 아주 얇은 식각정지층을 형성함으로써 선택적 식각 방법을 이용하여 p형 반도체층을 원하는 폭으로 식각할 수 있다.

公开(公告)号：KR1020040094190A

公开(公告)日：2004-11-09

申请号：KR1020030028186

申请日：2003-05-02

Applicant: 한국전자통신연구원

Inventor： 오수환 ,  박문호 ,  이지면 ,  김기수 ,  이철욱 ,  고현성 ,  박상기 ,  정영철 ,  김수현

IPC: H01S3/10

CPC classification number: H01S5/06256 ,  H01S5/028 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227

Abstract: PURPOSE: An SG-DFB(Sampled Grating Distributed Feed-Back) tunable semiconductor laser WITH an SG-DBR(Sampled Grating Distributed Bragg Reflector) is provided to tune a wavelength by integrating an SG-DFB structure and an SG-DBR structure and forming a phase control region of the SG-DFB structure. CONSTITUTION: A sampled grating(39) is formed on an n-type InP substrate(31) used as a lower clad layer. A phase control region of an InGaAsP waveguide and a gain region of an active layer are formed on the sampled grating. A p-type InP clad layer(32) used as an upper clad layer is formed thereon. A plurality of electrodes are formed on the p-type InP clad layer. A phase control region electrode(36) is formed on the phase control region. A gain region electrode(37) is formed on the gain region. A non-reflective thin film(33) is formed on a section of a semiconductor laser diode.

Abstract translation: 目的：提供具有SG-DBR（采样光栅分布式布拉格反射器）的SG-DFB（采样光栅分布式反馈）可调谐半导体激光器，通过集成SG-DFB结构和SG-DBR结构并形成 SG-DFB结构的相位控制区域。 构成：在用作下包层的n型InP衬底（31）上形成采样光栅（39）。 在采样光栅上形成InGaAsP波导的相位控制区域和有源层的增益区域。 在其上形成用作上覆盖层的p型InP覆盖层（32）。 在p型InP覆盖层上形成多个电极。 相位控制区电极（36）形成在相位控制区域上。 增益区电极（37）形成在增益区上。 在半导体激光二极管的一部分上形成非反射薄膜（33）。

公开(公告)号：KR100378596B1

公开(公告)日：2003-03-31

申请号：KR1020000046392

申请日：2000-08-10

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  조호성 ,  이철욱 ,  편광의

IPC: G02F1/00

CPC classification number: G02F1/21 ,  G02F2001/212

Abstract: PURPOSE: A semiconductor optical modulator is provided to keep an interference optical path regular and to simplify the manufacturing process by forming the vertically layered structure with two optical waveguide arms in a modulator arm area. CONSTITUTION: A semiconductor optical modulator consists of an input optical waveguide area(2), a modulator arm area(3) and an output optical waveguide area(4). The input/output optical waveguide areas receive input/output optical waveguide layers(5,6) used as cores respectively. The areas are divided into upper clad layers and upper clad layers centering on the inserted optical waveguide layers. The input/output optical waveguide layers have thickness getting smaller in the forward direction of light in the input optical waveguide area and getting larger in the forward direction in the output optical waveguide area. In the modulator arm, upper/lower optical waveguide layers(7,9) are layered vertically with a p-type metal contact layer(8) having a low band gap energy in the middle. Thereby, the interference optical path is kept regular.

Abstract translation: 目的：提供半导体光学调制器以保持干涉光路规则并通过在调制器臂区域中形成具有两个光学波导臂的垂直分层结构来简化制造过程。 构成：半导体光调制器由输入光波导区域（2），调制器​​臂区域（3）和输出光波导区域（4）组成。 输入/输出光波导区域分别接收用作核心的输入/输出光波导层（5,6）。 这些区域被分成以插入的光波导层为中心的上包层和上包层。 输入输出光波导层的厚度在输入光波导区域中的光的正向方向上变小，并且在输出光波导区域中在正向上变大。 在调制器臂中，上部/下部光波导层（7,9）与中间具有低带隙能量的p型金属接触层（8）垂直层叠。 由此，干涉光路保持规则。

公开(公告)号：KR1020020013986A

公开(公告)日：2002-02-25

申请号：KR1020000046392

申请日：2000-08-10

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  조호성 ,  이철욱 ,  편광의

IPC: G02F1/00

CPC classification number: G02F1/21 ,  G02F2001/212

Abstract: PURPOSE: A semiconductor optical modulator is provided to keep an interference optical path regular and to simplify the manufacturing process by forming the vertically layered structure with two optical waveguide arms in a modulator arm area. CONSTITUTION: A semiconductor optical modulator consists of an input optical waveguide area(2), a modulator arm area(3) and an output optical waveguide area(4). The input/output optical waveguide areas receive input/output optical waveguide layers(5,6) used as cores respectively. The areas are divided into upper clad layers and upper clad layers centering on the inserted optical waveguide layers. The input/output optical waveguide layers have thickness getting smaller in the forward direction of light in the input optical waveguide area and getting larger in the forward direction in the output optical waveguide area. In the modulator arm, upper/lower optical waveguide layers(7,9) are layered vertically with a p-type metal contact layer(8) having a low band gap energy in the middle. Thereby, the interference optical path is kept regular.

Abstract translation: 目的：提供半导体光调制器以通过在调制器臂区域中形成具有两个光波导臂的垂直分层结构来保持干涉光路规则并简化制造过程。 构成：半导体光调制器由输入光波导区域（2），调制器​​臂区域（3）和输出光波导区域（4）组成。 输入/输出光波导区域分别接收用作核心的输入/输出光波导层（5,6）。 这些区域以插入的光波导层为中心分为上覆层和上覆层。 输入/输出光波导层的厚度在输入光波导区域中的光的正向方向上变小，并且在输出光波导区域中在向前方向上变大。 在调制器臂中，上/下光波导层（7,9）在中间具有低带隙能的p型金属接触层（8）垂直分层。 由此，干涉光路保持规则。