Abstract:
기존 광대역 테라헤르츠 분광시스템의 핵심부품인 PCA 및 포토믹서의 현존하는 제한적인 요소를 근본적으로 해결한 포토믹서 및 그의 제조방법을 제시한다. 제시된 포토믹서는 기판의 상면에 형성되되 광이 입사되는 영역에 형성된 활성층, 및 기판의 상면에 형성되되 광이 입사되는 영역을 제외한 나머지 영역에 형성된 열전도층을 포함한다. 활성층은 메사형 단면을 갖도록 형성되고, 열전도층은 광이 입사되는 영역을 제외한 영역에 MOCVD법으로 재성장되어 평탄화된 표면을 갖게 된다.
Abstract:
The present invention relates to a beating signal monitoring module, and a terahertz wave generator and an optical signal monitoring device including the same. The beating signal monitoring module according to the present invention comprises: a non-linear unit for generating an optical signal, including four wave mixing (FWM) light, in response to a beating signal generated based on first and second light; a filter unit for separating the FWM light from the optical signal and outputting the separated FWM light; and a monitoring unit for monitoring the beating signal by using the separated FWM light. According to the beating signal monitoring module, and the terahertz wave generator and the optical signal monitoring device including the same of the present invention, the beating signal generated by using two lasers can be efficiently monitored by using the FWM signal.
Abstract:
The present invention relates to a terahertz wave generating module and a terahertz wave detecting device including the same. The terahertz wave generating module according to the present invention comprises: a bidirectional light source which provides a first dual-mode beam in a first direction and a second dual-mode beam in a second direction; a forward lens unit which focuses the first dual-mode beam; a photomixer unit which converts the first dual-mode beam focused by the forward lens unit into a terahertz wave, and outputs the converted terahertz wave; a backward lens unit which focuses the second dual-mode beam; and a light output unit which uses the second dual-mode beam focused by the backward lens unit as a light signal, wherein the bidirectional light source, the forward lens unit, the photomixer unit, the backward lens unit, and the light output unit are integrated in a housing. The terahertz wave generating module and the terahertz wave detecting device including the same according to the present invention may have a small size and efficiently monitor generated terahertz waves.
Abstract:
본 발명은 표적 바이오 물질 검출 키트 및 표적 바이오 물질 검출 방법에 관한 것으로서, 더욱 구체적으로는 공진 반사광 필터 및 나노 복합체를 포함하는 표적 바이오 물질 검출 키트를 제공한다. 본 발명의 표적 바이오 물질 검출 키트 및 표적 바이오 물질 검출 방법을 이용하면, 공진 반사광 필터로부터 나오는 반사/투과 스펙트럼 상의 피크 위치의 이동을 현저히 크게 만들어 줌으로써 표적 바이오 물질의 검출 및 정량이 용이하고, 적은 시료로도 정확한 측정이 가능하게 하는 효과가 있다. 공진 반사광 필터, 나노 입자, 연결 물질, 나노 복합체
Abstract:
A silicon bio sensor which is easy to integrate or joint with a silicon electronic element is provided to massively produce with low cost. A silicon bio sensor comprises: a light emitting layer which changes the wavelength of light according to the absorption of bio material; an electron injection layer(120) which makes electrons flow into the light emitting layer; a hole injection layer(130) which make holes flow into the light emitting layer; The bio material is an antibody(140) and antigen(150). The light emitting layer is implemented with silicon nitride(SiN). A method for manufacturing the silicon bio sensor comprises: a step of depositing a type one silicon film, a silicon nano crystalline, and a type two silicon film in order on the surface of upper side of silicon substrate; a step of etching the type one silicon film, silicon nano crystalline, and type two silicon film to form the hole injection layer, light emitting layer and electron injection layer; a step of forming a type two electrode on the surface of the electron injection layer; and a step of form a type one electrode at both edge of surface of upper side of the silicon substrate and center area of surface of lower side.
Abstract:
An apparatus for measuring the temperature of a semiconductor light emitting device is provided to precisely measure the temperature of an active region of a semiconductor light emitting device by using a temperature sensing diode integrated next to the semiconductor light emitting device. A light emitting device(220) is integrated on a semiconductor substrate(200). A temperature sensing diode(230) is integrated in parallel with the light emitting device. An insulator(240) electrically insulates the light emitting device from the temperature sensing diode, located between the light emitting device and the temperature sensing diode. A first electrode(210) is formed on the bottom side of the semiconductor substrate, used as a common electrode of the light emitting device and the temperature sensing diode. A second electrode is formed on the light emitting device and the temperature sensing diode. The light emitting device and the temperature sensing diode are separated by an etch method and the separated portion is filled with the insulator.
Abstract:
본 발명은 전기 광학적 크로스토크 및 수율을 개선할 수 있는 트랜스미터 및 리시버를 포함하는 양방향 모듈 및 그 제조방법을 개시한다. 개시된 본 발명은, 트랜스미터 및 리시버로 구성되는 양방향 모듈로서, 상기 트랜스미터는 외부 공동(external cavity)을 갖는 DFB(distributed feedback) 레이저 다이오드를 포함한다.
Abstract:
PURPOSE: A widely tunable SG-DFB(Sampled Grating-Distributed FeedBack) laser diode oscillated according to a variation of refractive indexes of phase control regions is provided to enhance the optical efficiency by connecting directly optical waves of a gain region to an optical fiber without loss. CONSTITUTION: A widely tunable SG-DFB laser diode includes a first gain region and a second gain region. The widely tunable SG-DFB laser diode further includes a first SG-DFB structure and a second SG-DFB structure. The first SG-DFB includes a first sampled grating(34a) of a first period formed on the first gain region and a first phase control region(35a) formed between the first sampled gratings. The second SG-DFB includes a second sampled grating(34b) of a second period formed on the second gain region and a second phase control region(35b) formed between the second sampled gratings.