公开(公告)号：EP1932174A4

公开(公告)日：2009-09-23

申请号：EP06825489

申请日：2006-10-04

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  KORZENSKI MICHAEL B ,  RAJARATNAM MARTHA ,  KING MACKENZIE ,  ANGST DAVID

IPC: H01L21/461 ,  G03C5/00 ,  G03F7/26

CPC classification number: H01L21/02057 ,  C09G1/02 ,  C11D3/33 ,  C11D3/3942 ,  C11D7/06 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/02 ,  C23G1/061 ,  C23G1/103 ,  C23G1/106 ,  C23G1/18 ,  C23G1/205 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32134

公开(公告)号：EP1689825A4

公开(公告)日：2008-09-24

申请号：EP04812516

申请日：2004-11-30

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  BAUM THOMAS H ,  GHENCIU ELIODOR G ,  XU CHONGYING

IPC: C09K13/00 ,  C09K13/04 ,  H01L21/302 ,  H01L21/306

CPC classification number: H01L21/02101 ,  B81C1/00476 ,  H01L21/31105 ,  H01L21/32131

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

公开(公告)号：EP1946358A4

公开(公告)日：2009-03-04

申请号：EP06850723

申请日：2006-11-09

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  KING MACKENZIE

IPC: H01L21/3213 ,  C23F1/44

CPC classification number: C09K13/08 ,  H01L21/02032 ,  H01L21/02079 ,  H01L21/31111 ,  H01L21/32134

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

公开(公告)号：EP1945748A4

公开(公告)日：2009-01-07

申请号：EP06836276

申请日：2006-10-12

Applicant: ADVANCED TECH MATERIALS

Inventor： RATH MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H ,  JIANG PING ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

IPC: C11D7/50

CPC classification number: C11D3/26 ,  C09D9/04 ,  C11D3/30 ,  C11D3/3773 ,  C11D3/43 ,  C11D7/32 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/3212

Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

公开(公告)号：EP1661160A4

公开(公告)日：2008-07-02

申请号：EP04779392

申请日：2004-07-28

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B

IPC: H01L23/58 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/44 ,  C23C16/448 ,  C23C18/00 ,  C23C18/12 ,  H01L20060101 ,  H01L21/288 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

CPC classification number: C23C18/122 ,  C23C18/00 ,  C23C18/08 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/1275 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76841 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

公开(公告)号：EP2724413A4

公开(公告)日：2015-02-11

申请号：EP12802703

申请日：2012-06-19

Applicant: ADVANCED TECH MATERIALS

Inventor： POE SARAH L ,  PARADISE CHRISTOPHER L ,  MUOLLO LAURA R ,  PAL RESHMA ,  WARNER JOHN C ,  KORZENSKI MICHAEL B

IPC: H01M10/54 ,  B09B3/00 ,  H01M4/525 ,  H01M10/052

CPC classification number: H01M4/1391 ,  B03D1/006 ,  B03D1/008 ,  B03D1/02 ,  H01M4/04 ,  H01M4/1393 ,  H01M4/48 ,  H01M4/58 ,  H01M4/587 ,  H01M4/625 ,  H01M10/0525 ,  H01M10/54 ,  Y02W30/84

Abstract: A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.

公开(公告)号：EP2082024A4

公开(公告)日：2010-11-17

申请号：EP07843089

申请日：2007-09-25

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

IPC: C11D7/32 ,  G03F7/40 ,  G03F7/42

CPC classification number: C11D11/0047 ,  C11D1/008 ,  C11D3/044 ,  C11D3/2068 ,  C11D3/30 ,  G03F7/425

公开(公告)号：EP1877530A4

公开(公告)日：2010-06-09

申请号：EP06749725

申请日：2006-04-10

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  VISINTIN PAMELA M ,  BAUM THOMAS H

IPC: H01L21/311 ,  C11D1/00 ,  C11D1/02 ,  C11D1/72 ,  C11D3/20 ,  C11D3/30 ,  C11D3/43 ,  C11D3/44 ,  G03F7/42

CPC classification number: H01L21/31133 ,  B82Y30/00 ,  C11D3/162 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/22 ,  C11D7/3209 ,  C11D7/5004 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/425 ,  H01L21/266

公开(公告)号：EP1559132A4

公开(公告)日：2007-04-11

申请号：EP03781458

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

公开(公告)号：EP1572833A4

公开(公告)日：2006-03-15

申请号：EP03779251

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C09K13/00 ,  C03C15/00 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213

CPC classification number: H01L21/02071 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/264 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5022 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/32138

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.