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    62.
    发明专利
    未知

    公开(公告)号：DE3855119T2

    公开(公告)日：1996-10-17

    申请号：DE3855119

    申请日：1988-07-21

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  KANAI MASAHIRO ,  ISHIHARA SHUNICHI ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA ,  MURAKAMI TSUTOMU

    IPC: H01L21/363 ,  H01L21/365 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/18 ,  H01L31/036 ,  H01L31/20

    Abstract: A photovoltaic element which generates photoelectromotive force by the connection of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic% of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume.

    63.
    发明专利
    未知

    公开(公告)号：ES2084583T3

    公开(公告)日：1996-05-16

    申请号：ES88308068

    申请日：1988-08-31

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  KANAI MASAHIRO ,  ISHIHARA SHUNICHI ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

    IPC: H01L31/0296 ,  H01L31/077 ,  H01L31/18 ,  H01L31/075 ,  H01L31/036 ,  H01L31/20

    Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 in terms of number of atoms. The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not cause any undesirable light-induced fatigue even upon continuous use for a long period of time.

    64.
    发明专利
    未知

    公开(公告)号：DE69022664T2

    公开(公告)日：1996-03-28

    申请号：DE69022664

    申请日：1990-06-27

    Applicant: CANON KK

    Inventor： ECHIZEN HIROSHI ,  FUJIOKA YASUSHI ,  NAKAGAWA KATSUMI ,  KANAI MASAHIRO ,  KARIYA TOSHIMITSU ,  MATSUYAMA JINSHO ,  TAKEI TETSUYA

    IPC: C23C16/50 ,  H01J37/32 ,  H01L31/20 ,  C23C16/54

    Abstract: A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.

    65.
    发明专利
    未知

    公开(公告)号：AT135497T

    公开(公告)日：1996-03-15

    申请号：AT88308068

    申请日：1988-08-31

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  KANAI MASAHIRO ,  ISHIHARA SHUNICHI ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA ,  MURAKAMI TSUTOMU

    IPC: H01L31/0296 ,  H01L31/077 ,  H01L31/18 ,  H01L31/075 ,  H01L31/036 ,  H01L31/20

    Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 in terms of number of atoms. The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not cause any undesirable light-induced fatigue even upon continuous use for a long period of time.

    67.
    发明专利
    未知

    公开(公告)号：DE69021960T2

    公开(公告)日：1996-02-15

    申请号：DE69021960

    申请日：1990-06-27

    Applicant: CANON KK

    Inventor： KANAI MASAHIRO ,  MATSUYAMA JINSHO ,  NAKAGAWA KATSUMI ,  KARIYA TOSHIMITSU ,  FUJIOKA YASUSHI ,  TAKEI TETSUYA ,  ECHIZEN HIROSHI

    IPC: C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20

    Abstract: A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma. An apparatus suitable for practicing said method.

    68.
    发明专利
    未知

    公开(公告)号：DE3936666C2

    公开(公告)日：1995-08-10

    申请号：DE3936666

    申请日：1989-11-03

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI

    IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/06

    Abstract: An improved stacked type photovoltaic device comprises a plurality of stacked photovoltaic elements wherein at least one element thereof comprises a semiconductor layer (a) having a refractive index na and a semiconductor layer (b) having a refractive index nb and a semiconductor layer (c) is inserted therebetween as an antireflection layer; wherein said semiconductor layer (c) has constitutent elements having a composition ratio different from the composition ratio of the constituent elements of both said semiconductor layer (a) and (b) and said semiconductor layer (c) has a refractive index nc= 2ROOT na.nb and a thickness d= lambda /4 2ROOT na.nb, in which lambda represents a peak wavelength of the spectral sensitivity of an adjacent photovoltaic element positioned in the direction of light transmission. The semiconductor layer (c) may also be constituted by a semiconductor film having an elemental composition comprising other elements in addition to the constituent elements of the semiconductor layer (b).

    69.
    发明专利
    未知

    公开(公告)号：AT124805T

    公开(公告)日：1995-07-15

    申请号：AT88310921

    申请日：1988-11-18

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  ISHIHARA SHUNICHI ,  KANAI MASAHIRO ,  MURAKAMI TSUTOMU ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

    IPC: H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/06 ,  H01L31/02 ,  H01L21/365

    Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe1-xTex:H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

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