公开(公告)号：DE10216614A1

公开(公告)日：2003-10-30

申请号：DE10216614

申请日：2002-04-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HECHT THOMAS ,  BIRNER ALBERT ,  SEIDL HARALD ,  SCHROEDER UWE ,  JAKSCHIK STEFAN ,  GUTSCHE MARTIN

IPC: C25D11/02 ,  C25D11/32 ,  H01L21/316 ,  H01L21/8242 ,  H01G9/04

Abstract: Production of a thin dielectric layer (2) on a conducting substrate (1) comprises applying a thin dielectric layer on the substrate, placing in an electrochemical cell (5) filled with an electrolyte (9) and having two electrodes (6, 7), connecting the substrate with the first electrode and the second electrode with the electrolyte, and applying an electrical potential between the electrodes. The current flow between the electrolyte and substrate is controlled in an electrochemical process and is adjusted by the dielectric layer, preferably in the region of defect sites. An Independent claim is also included for an arrangement of a substrate and a dielectric layer.

公开(公告)号：DE10162900C1

公开(公告)日：2003-07-31

申请号：DE10162900

申请日：2001-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SAENGER ANNETTE ,  SELL BERNHARD ,  BIRNER ALBERT ,  GOLDBACH MATTHIAS

IPC: H01L21/288 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/108

Abstract: The invention relates to a method for fabricating low-resistance electrodes in trench capacitors, and includes steps of: providing a wafer; producing trenches in the wafer; introducing the wafer into an electrolyte solution including a salt of an electrically conductive material; and electrically contact-connecting the wafer and applying a voltage between the wafer and a counterelectrode configured in the electrolyte solution to electrodeposit at least sections of the electrically conductive material in the trenches. The electrodeposition of the electrode material enables a uniform layer thickness along all regions of the trench wall.

公开(公告)号：DE10142591A1

公开(公告)日：2003-03-27

申请号：DE10142591

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLDBACH MATTHIAS ,  LUETZEN JOERN ,  BIRNER ALBERT

IPC: H01L21/334 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8242

Abstract: An insulation region, for example, an oxide collar, is formed in a trench structure for a DRAM by first widening a first trench region of the trench that is to be formed, in particular, a base region thereof. At least part of the widened region is then provided with a material region for the insulation region.

公开(公告)号：DE10139827A1

公开(公告)日：2003-03-13

申请号：DE10139827

申请日：2001-08-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BIRNER ALBERT ,  GOLDBACH MATTHIAS ,  SCHLOESSER TILL

IPC: H01L27/108 ,  H01L21/8242

Abstract: The upper capacitor electrode of the trench capacitor is connected to an epitaxially grown source/drain region of the select transistor by a tubular, monocrystalline Si contact-making region. The gate electrode layer has an oval peripheral contour around the transistor, the oval peripheral contours of the gate electrode layers of memory cells arranged in a row along a word line forming overlap regions in order to increase the packing density.

公开(公告)号：DE10138981A1

公开(公告)日：2003-03-06

申请号：DE10138981

申请日：2001-08-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BIRNER ALBERT ,  GOLDBACH MATTHIAS

IPC: H01L21/3063 ,  H01L21/316 ,  H01L21/334 ,  H01L21/8242

Abstract: In a process for the electrochemical oxidation of a semiconductor substrate that has recesses, such as for example, capacitor trenches or mesopores, formed in a silicon surface region, self-limited oxide formation takes place. The end of this formation is reached as a function of the process parameters such as the doping of the silicon region, the applied voltage and the composition of the electrolyte used, as soon as either a predetermined maximum layer thickness of the formed oxide or a predetermined minimum residual silicon layer thickness between two adjacent recesses is reached. The self-limiting is achieved either as a result of the overall voltage applied over the silicon oxide layer, which has already formed, dropping or as a result of the space charge regions of adjacent recesses coming into contact with one another.

公开(公告)号：DE10107150C2

公开(公告)日：2003-02-06

申请号：DE10107150

申请日：2001-02-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BIRNER ALBERT ,  SCHUPKE KRISTIN ,  MOLL ANETT ,  JAKUBOWSKI FRANK

IPC: C30B33/10 ,  H01L21/66 ,  C30B33/00