公开(公告)号：DE10345394B4

公开(公告)日：2006-10-05

申请号：DE10345394

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  GUTSCHE MARTIN

IPC: H01L21/8242 ,  B82B3/00 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316

公开(公告)号：DE102004049453A1

公开(公告)日：2006-04-20

申请号：DE102004049453

申请日：2004-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DUESBERG GEORG STEFAN ,  KREUPL FRANZ ,  STEINLESBERGER GERNOT ,  SEIDEL ROBERT

IPC: B82B1/00 ,  B82B3/00 ,  H01B1/04 ,  H01L21/336 ,  H01L21/768 ,  H01L23/532 ,  H05K3/40

Abstract: A circuit is disclosed. The circuit includes at least one nanostructure and a carbon interconnect formed by a substantially carbon layer, wherein the nanostructure and the carbon interconnect are directly coupled to one another.

公开(公告)号：DE10335813A1

公开(公告)日：2005-03-17

申请号：DE10335813

申请日：2003-08-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  MIO HANNES

IPC: G11C13/02 ,  G11C17/06 ,  H01L23/58 ,  H01L27/32 ,  H01L29/06 ,  H01L29/73 ,  H01L29/78 ,  H01L29/861 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

公开(公告)号：DE10256486A1

公开(公告)日：2004-07-15

申请号：DE10256486

申请日：2002-12-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  HOFMANN FRANZ

IPC: G11C13/02 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00 ,  H01L21/8229 ,  B81B1/00 ,  B81C1/00 ,  G11C16/00 ,  H01L27/10

公开(公告)号：AU2003289813A1

公开(公告)日：2004-06-23

申请号：AU2003289813

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFMANN FRANZ ,  KREUPL FRANZ

IPC: G11C13/02 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00 ,  G11C11/34

公开(公告)号：DE10201645A1

公开(公告)日：2003-08-07

申请号：DE10201645

申请日：2002-01-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BREDERLOW RALF ,  ELBE ASTRID ,  KREUPL FRANZ ,  LUYKEN JOHANNES ,  NEUHAUSER ROBERT ,  PAULUS CHRISTIAN ,  SCHEPERS JOERG ,  THEWES ROLAND

IPC: G06K19/073 ,  H01L23/58 ,  G01R31/28

公开(公告)号：DE10056282A1

公开(公告)日：2002-05-23

申请号：DE10056282

申请日：2000-11-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  WEBER WERNER

IPC: G06N3/063 ,  G11C11/54 ,  G06N3/02

Abstract: Artificial neuron (100) comprises a transistor (101) and a number of electrical contacts which can be contacted by the ends of nanostructures. A first connection (102) of the transistor is coupled to each end of the nanostructures. The nanostructures are preferably silicon nano-wires or carbon nano-tubes. The transistor is a MOSFET, a bipolar transistor or a MIFG transistor.