公开(公告)号：DE60036107T2

公开(公告)日：2008-05-21

申请号：DE60036107

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：AU6199200A

公开(公告)日：2001-01-31

申请号：AU6199200

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：SG189219A1

公开(公告)日：2013-05-31

申请号：SG2013024393

申请日：2011-10-03

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL MARTIN PAUL ,  FISCHER ANDREAS

Abstract: An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.

公开(公告)号：DE60036107D1

公开(公告)日：2007-10-04

申请号：DE60036107

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：SG10201507919TA

公开(公告)日：2015-10-29

申请号：SG10201507919T

申请日：2008-03-26

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS ,  MORAVEJ MARYAM

Abstract: In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

公开(公告)号：SG10201401262UA

公开(公告)日：2014-08-28

申请号：SG10201401262U

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  KOSHIISHI AKIRA ,  FISCHER ANDREAS

公开(公告)号：SG177922A1

公开(公告)日：2012-02-28

申请号：SG2011096096

申请日：2007-12-14

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Abstract: PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS AbstractA method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.Figure: 3

公开(公告)号：SG177223A1

公开(公告)日：2012-01-30

申请号：SG2011095247

申请日：2007-12-14

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  ERIC HUDSON ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Abstract: METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMAMethods and arrangements for controlling the electron loss to the upper electrode, including techniques and apparatus for biasing the upper electrode more negatively to allow charged species to be trapped within the plasma chamber for a longer period of time, thereby increasing the plasma density. The induced RF signal on the upper electrode is rectified, thus biasing the upper electrode more negatively. The rectified RF signal may also be amplified, thus driving the upper electrode even more negatively, if desired.Figure: 3

公开(公告)号：SG175789A1

公开(公告)日：2011-12-29

申请号：SG2011078276

申请日：2010-05-04

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  SHIN NEUNGHO ,  CAMARGO FRANSISCO

Abstract: A method, performed in connection with bevel etching of a substrate, for improving bevel- etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and ascertaining at least one bevel edge characteristic of a bevel edge of said substrate. The method also includes deriving at least one compensation factor from said at least one bevel edge characteristic, said at least one compensation factor pertaining to an adjustment in a bevel etch process parameter. The method further includes performing said bevel etching utilizing said at least one compensation factor.

公开(公告)号：SG173403A1

公开(公告)日：2011-08-29

申请号：SG2011052701

申请日：2007-06-01

Applicant: LAM RES CORP

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

Abstract: 18APPARATUSES, SYSTEMS AND METHODS FOR RAPID CLEANING OF PLASMA CONFINEMENT RINGS WITH MINIMAL EROSION OF OTHER CHAMBER PARTSAbstractAn apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.Figure 2