SENSOR SYSTEM FOR MEASURING PHYSICAL CHARACTERISTICS OF MATERIAL SHEET

    公开(公告)号:JPH1062275A

    公开(公告)日:1998-03-06

    申请号:JP16956997

    申请日:1997-06-11

    Applicant: XEROX CORP

    Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive sheet processing system wherein sheet characteristics are detected, setting of a sheet transfer mechanism is adjusted based on the sheet characteristics, and characteristics such as speed and intervals for handling sheets are optimized. SOLUTION: A sensor system 200 for measuring sheet characteristics includes a diaphragm 202. The diaphragm 202 includes a first pair of piezo resistors A1, A2 and a second pair of piezo resistors B1, B2. The first pair of piezo resistors A1, A2 are placed orthogonally and closely to sides 204, 206 of the diaphragm 202. The second pair of piezo resistors B1, B2 are placed between the first pair, in parallel to them and separately from sides 208, 210 of the diaphragm 202. If the first pair of the piezo resistors A1, A2 are equilibrated with the second pair of piezo resistors B1, B2 in a Wheatstone's bridge, voltage proportional to a thickness of a sheet is caused. When the resistors of the first pair are equilibrated and the resistors of the second pair are equilibrated respectively, voltage indicating a coefficient of friction of the sheet is caused.

    Distributed bragg reflector system and method
    62.
    发明专利
    Distributed bragg reflector system and method 有权
    分布式BRAGG反射器系统和方法

    公开(公告)号:JP2006285242A

    公开(公告)日:2006-10-19

    申请号:JP2006086945

    申请日:2006-03-28

    CPC classification number: G02B26/001 G01J3/02 G01J3/0256 G01J3/26 G02B6/4204

    Abstract: PROBLEM TO BE SOLVED: To provide a uniform and high reflectance over the entire optical band of a distributed Bragg reflector, because it is necessary to measure respective layer thicknesses of the distributed Bragg reflector, when the distributed Bragg reflector is to be formed. SOLUTION: The respective layer thicknesses of the distributed Bragg reflector are measured with λ 0 /4n, where λ 0 represents the central wavelength of the optical band and n represents the refractive index of light in the layer material. By using this method, the reflectance of the distributed Bragg reflector is enhanced at a wavelength close to λ 0 , but the reflectance at a wavelength far from λ 0 , for example at a wavelength adjacent to the central wavelength, cannot be enhanced to a required level. The distributed Bragg reflector includes a first layer formed to be a first thickness, and a second layer formed to be a second thickness. The method of forming the distributed Bragg reflector includes a step for forming the first layer to be the first thickness and a step for forming the second layer to be the second thickness. The first and second thicknesses are determined by using a wavelength that is adjacent to the center wavelength of an optical band of the distributed Bragg reflector. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:为了在分布布拉格反射器的整个光学带上提供均匀和高反射率,因为需要测量分布式布拉格反射器的各层厚度,当分布式布拉格反射器将要形成时 。 解决方案:分布式布拉格反射器的各层厚度用λ 0 / 4n测量,其中λ 0 表示光带的中心波长,n表示 层材料中的光的折射率。 通过使用该方法,分布式布拉格反射器的反射率在接近λ 0 的波长处增强,但是在远离λ 0 的波长处的反射率,例如在 与中心波长相邻的波长不能增强到所需的水平。 分布式布拉格反射器包括形成为第一厚度的第一层和形成为第二厚度的第二层。 形成分布式布拉格反射器的方法包括形成第一层的第一厚度的步骤和用于形成第二层的第二厚度的步骤。 通过使用与分布式布拉格反射器的光学带的中心波长相邻的波长来确定第一和第二厚度。 版权所有(C)2007,JPO&INPIT

    Low-loss silicon waveguide and method of fabricating the same
    63.
    发明专利
    Low-loss silicon waveguide and method of fabricating the same 审中-公开
    低损耗硅波片及其制造方法

    公开(公告)号:JP2005208638A

    公开(公告)日:2005-08-04

    申请号:JP2005006110

    申请日:2005-01-13

    CPC classification number: G02B6/136 G02B2006/12097

    Abstract: PROBLEM TO BE SOLVED: To reduce an optical loss of the light propagated through a silicon rib waveguide. SOLUTION: A method of fabricating the silicon rib waveguide for a micro-optical device comprises steps of: preparing silicon-on-insulator structure having a single crystal silicon wafer with a surface thereof being bonded to a surface of a silicon wafer by a layer of an insulative bonding material; patterning a surface of the single crystal silicon wafer opposite to the above surface bonded to the surface of the silicon wafer to form at least one silicon rib waveguide having a side wall opposite to the top surface and an end wall; and forming a silicon nitride cladding layer having predetermined thickness on the top surface, the opposite side wall, and the end wall of at least one silicon rib. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:减少通过硅肋波导传播的光的光损耗。 解决方案:制造用于微光学器件的硅肋波导的方法包括以下步骤:制备具有单晶硅晶片的绝缘体上硅结构,其单晶硅晶片的表面通过 一层绝缘接合材料; 将与所述上表面相对的所述单晶硅晶片的与所述硅晶片表面相接合的表面形成至少一个具有与所述顶表面相对的侧壁和端壁的硅肋波导; 以及在至少一个硅肋的顶表面,相对侧壁和端壁上形成具有预定厚度的氮化硅覆层。 版权所有(C)2005,JPO&NCIPI

    INK JET NOZZLE AND FINE PRODUCTION THEREOF

    公开(公告)号:JP2000203029A

    公开(公告)日:2000-07-25

    申请号:JP2000007783

    申请日:2000-01-17

    Applicant: XEROX CORP

    Inventor: KUBBY JOEL A

    Abstract: PROBLEM TO BE SOLVED: To provide a leak preventing ink jet nozzle used in a printer. SOLUTION: A nozzle plate 100 having an upper surface 102 and an under surface is prepared and the upper surface 102 of the nozzle plate 100 is subjected to ablation processing by laser to form a bore 110 extending from the upper surface 102 of the nozzle plate 100 to the under surface thereof and the under surface of the nozzle plate 100 is subjected to ablation processing by laser to form a lip 140 extending from the under surface of the nozzle plate 100 to the outside thereof.

    DRY ETCHING DEVICE
    70.
    发明专利

    公开(公告)号:JPH1065233A

    公开(公告)日:1998-03-06

    申请号:JP12400697

    申请日:1997-05-14

    Applicant: XEROX CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a dry etching device which is suitable for manufacturing a micro device and a fine electric mechanical system. SOLUTION: A dry etching device 10 is so formed as to execute micromachine processing to a substrate 24 equipped with a first layer 26 and a second layer 28 which are formed of different materials and jointed together, forming a heterojunction 29. In this case, a substrate holding fixer 30 is provided, a first and a second electric contacts, 32 and 34, which are capable of being positioned, so as to come into contact with the layers 26 and 28 and electrically insulated from each other are provided to the substrate holding fixer 30, a power supply 22 is connected to the first electric contact 32 of the substrate holding fixer 30, and a voltage is applied to the heterojunction 29 of the substrate 24. A plasma flow 12 which contains chemically reactive ions 14 is made to irradiate the second layer 26, and the unmasked region of the substrate 24 is kept being etched until the plasma flow 12 is substantially stopped by the biased heterojunction 29. The substrate 24 is cooled down or periodically recovered with a corrosive material, so as to protect its side wall against damages caused by downward etching.

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