中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

126 records (took 0.021 seconds)

    LIGHT-EMITTING DEVICE
    62.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20160057820A1

    公开(公告)日：2016-02-25

    申请号：US14610353

    申请日：2015-01-30

    Applicant: LITE-ON TECHNOLOGY CORPORATION

    Inventor： CHIEN-LUNG WANG ,  SHIH-CHANG WANG ,  PO-CHANG LI ,  LI-PO CHANG

    IPC: H05B33/08 ,  F21V23/02 ,  H05B37/02

    CPC classification number: H05B37/0218 ,  H01J1/00 ,  H01J61/00 ,  H01J2201/00 ,  Y02B20/46

    Abstract: A light-emitting device includes an autotransformer, a circuit module and a light-emitting module. The autotransformer includes a first positive conductive wire for receiving a first input voltage within a first predetermined voltage range, a second positive conductive wire for receiving a second input voltage within a second predetermined voltage range, and a common negative conductive wire electrically mated to the first positive conductive wire and the second positive conductive wire. The first predetermined voltage range is larger than the second predetermined voltage range. The circuit module includes a driver electrically connected to the autotransformer, and a predetermined operating voltage value for driving the driver is substantially within the second predetermined voltage range. The light-emitting module is electrically connected to the driver. Therefore, one of both the first and the second positive conductive wires along with the common negative conductive wire are electrically connected to an AC power source.

    Abstract translation: 发光装置包括自耦变压器，电路模块和发光模块。 自耦变压器包括用于接收第一预定电压范围内的第一输入电压的第一正导线，用于接收第二预定电压范围内的第二输入电压的第二正导线，以及与第一预导电压 正导线和第二正导线。 第一预定电压范围大于第二预定电压范围。 电路模块包括电连接到自耦变压器的驱动器，并且用于驱动驱动器的预定工作电压值基本上在第二预定电压范围内。 发光模块电连接到驱动器。 因此，第一和第二正导线以及公共负导线中的一个电连接到AC电源。

    Particle sources and methods for manufacturing the same
    63.
    发明授权
    Particle sources and methods for manufacturing the same 有权
    粒子来源及其制造方法

    公开(公告)号：US09017562B2

    公开(公告)日：2015-04-28

    申请号：US13726971

    申请日：2012-12-26

    Applicant: 38th Research Institute, China Electronics Technology Group Corporation

    Inventor： Huarong Liu

    IPC: C25F3/00 ,  C03C15/00 ,  C23F4/02 ,  H01J1/00 ,  H01J1/304 ,  H01J9/02 ,  H01J37/04 ,  H01J37/06 ,  H01J37/08 ,  B82Y99/00 ,  H01J27/26 ,  H01J37/073

    CPC classification number: C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    Abstract translation: 本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面上产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。

    RADIO FREQUENCY (RF) POWER COUPLING SYSTEM UTILIZING MULTIPLE RF POWER COUPLING ELEMENTS FOR CONTROL OF PLASMA PROPERTIES
    65.
    发明申请
    RADIO FREQUENCY (RF) POWER COUPLING SYSTEM UTILIZING MULTIPLE RF POWER COUPLING ELEMENTS FOR CONTROL OF PLASMA PROPERTIES 有权
    射频功率耦合系统利用多个RF功率耦合元件控制等离子体性能

    公开(公告)号：US20130119854A1

    公开(公告)日：2013-05-16

    申请号：US13676265

    申请日：2012-11-14

    Applicant: Tokyo Electron Limited

    Inventor： Barton Lane ,  Lee Chen ,  Peter L.G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

    IPC: H01J1/00

    CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

    Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

    Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于离RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。

    PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME
    66.
    发明申请
    PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME 有权
    颗粒源及其制造方法

    公开(公告)号：US20130112138A1

    公开(公告)日：2013-05-09

    申请号：US13726971

    申请日：2012-12-26

    Applicant: 38th Research Institute, China Electronics Technology Group Corporation

    Inventor： Huarong LIU

    IPC: C23F4/02 ,  H01J1/00

    CPC classification number: C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    Abstract translation: 本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面上产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。

Patent Agency Ranking