公开(公告)号：US20150021473A1

公开(公告)日：2015-01-22

申请号：US14341362

申请日：2014-07-25

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/05 ,  H01J37/08 ,  H01J37/32

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge.

Abstract translation: 用于分离具有不同质量或电荷的离子的装置包括耦合到微波源的波导导管，用于通过波导管道中的开口传输微波。 管道的出口端位于用于将材料从材料源运输到开口的开口处。 等离子体室通过开口与波导管连通。 等离子体腔室通过开口接收来自波导管的微波和来自管道的材料。 等离子体室包括设置在其外壁中的磁体，用于在等离子体室中形成磁场。 等离子体室包括在室的与包含开口的一侧相对的一侧的带电盖。 盖子包括提取来自等离子体室的离子束的抽吸孔。 与一个提取孔耦合的偏转器接收从等离子体室提取的离子束。 每个偏转器弯曲离子束，并提供单独的通道，用于根据其相应的质量或电荷离开离子束弯曲的不同轨迹之后捕获离子。

公开(公告)号：US20140174660A1

公开(公告)日：2014-06-26

申请号：US14127286

申请日：2012-06-29

Applicant: Masahide Iwasaki

Inventor： Masahide Iwasaki

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32211 ,  H01J37/3222

Abstract: The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.

Abstract translation: 微波等离子体处理装置包括供电棒，该供电棒对RF偏压施加高频波，其上端连接到基座，下端连接到匹配器的高频输出端，匹配 单元; 围绕用作内部导体的供电杆的圆柱形外部导体; 和同轴线。 同轴线安装有扼流器机构，其构造成阻挡从腔室中的等离子体产生空间进入管线的不期望的微波，并且在线路中部防止微波到RF馈线的泄漏，从而抑制微波 泄漏。

公开(公告)号：US07589470B2

公开(公告)日：2009-09-15

申请号：US11343682

申请日：2006-01-31

Applicant: Lutfi Oksuz ,  Albert Rogers Ellingboe

Inventor： Lutfi Oksuz ,  Albert Rogers Ellingboe

IPC: H01J25/50 ,  H01P7/06

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32201 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

Abstract: A method and apparatus for producing a distributed plasma at atmospheric pressure. A distributed plasma can be produced at atmospheric pressure by using an inexpensive high frequency power source in communication with a waveguide having a plurality particularly configured couplers disposed therein. The plurality of particularly arranged couplers can be configured in the waveguide to enhance the electromagnetic field strength therein. The plurality of couplers have internal portions disposed inside the waveguide and spaced apart by a distance of ½ wavelength of the high frequency power source and external portions disposed outside the waveguide and spaced apart by a predetermined distance which is calculated to cause the electromagnetic fields in the external portions of adjacent couplers to couple and thereby further enhance the strength of the electromagnetic field in the waveguide. Plasma can be formed in plasma areas defined by gaps between electrodes disposed on the external portions.

Abstract translation: 一种用于在大气压下制造分布式等离子体的方法和装置。 通过使用与具有设置在其中的多个特别配置的耦合器的波导连通的便宜的高频电源，可以在大气压下产生分布式等离子体。 多个特别布置的耦合器可以配置在波导中以增强其中的电磁场强度。 多个耦合器具有设置在波导内部的内部部分，并且间隔开高频电源的1/2波长的距离和设置在波导外部的外部部分，并隔开预定距离，该预定距离被计算为使得电磁场在 相邻耦合器的外部部分耦合，从而进一步增强波导中电磁场的强度。 等离子体可以形成在由设置在外部部分上的电极之间的间隙限定的等离子体区域中。

公开(公告)号：US12009180B2

公开(公告)日：2024-06-11

申请号：US17435509

申请日：2020-08-27

Applicant: Hitachi High-Tech Corporation

Inventor： Norihiko Ikeda ,  Kazuya Yamada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32311 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

公开(公告)号：US12002654B2

公开(公告)日：2024-06-04

申请号：US17359318

申请日：2021-06-25

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Amormino ,  Hanh Nguyen ,  Kallol Bera ,  Philip Allan Kraus

IPC: H01J37/32 ,  H03F3/19 ,  H03F3/21

CPC classification number: H01J37/32201 ,  H01J37/32311 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/335 ,  H03F3/19 ,  H03F3/21

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

公开(公告)号：US20230411123A1

公开(公告)日：2023-12-21

申请号：US18330602

申请日：2023-06-07

Applicant: 6K Inc.

Inventor： Michael C. Kozlowski ,  Michael Resnick ,  Pawel Matys

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32201

Abstract: Disclosed herein are systems, methods, and devices processing feed material utilizing an upstream swirl module and composite gas flows. Some embodiments are directed to a microwave plasma apparatus for processing a material, comprising: a first flow module, a second flow module, and a liner.

公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20230326716A1

公开(公告)日：2023-10-12

申请号：US18042513

申请日：2021-08-16

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Hiroshi KANEKO ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/3222 ,  H01J37/32311 ,  H01J37/32201 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.

公开(公告)号：US20230260756A1

公开(公告)日：2023-08-17

申请号：US18306455

申请日：2023-04-25

Applicant: Hangzhou Dianzi University

Inventor： Jie Liu ,  Liping Yan ,  Zhiqun Cheng ,  Tiansong Deng

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/27

CPC classification number: H01J37/32266 ,  H01J37/32229 ,  H01J37/32715 ,  H01J37/32256 ,  H01J37/3222 ,  C23C16/511 ,  C23C16/274 ,  H01J2237/332 ,  H01J2237/24585 ,  H01J2237/002 ,  H01J37/32201

Abstract: Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.