公开(公告)号：EP2973713A4

公开(公告)日：2016-10-05

申请号：EP14779717

申请日：2014-04-01

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  BROWN DAVID L ,  FIELDEN JOHN

IPC: H01L27/146 ,  H01J40/06 ,  H01J43/08 ,  H01L31/103

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其它实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：EP1708243B1

公开(公告)日：2016-03-30

申请号：EP04807699.6

申请日：2004-12-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： OHMURA, Takayuki, c/o Hamamatsu Photonics K.K. ,  KIMURA, Suenori, c/o Hamamatsu Photonics K.K. ,  ITO, Masuo, c/o Hamamatsu Photonics K.K.

IPC: H01J43/26 ,  H01J43/20

CPC classification number: H01J43/08

公开(公告)号：EP2993685A1

公开(公告)日：2016-03-09

申请号：EP15191508.9

申请日：2005-02-16

Applicant: HAMAMATSU PHOTONICS K. K.

Inventor： KYUSHIMA, Hiroyuki ,  SHIMOI, Hideki ,  KAGEYAMA, Akihiro ,  INOUE, Keisuke ,  ITO, Masuo

IPC: H01J43/24

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract translation: 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：EP1717843A4

公开(公告)日：2008-12-17

申请号：EP05710248

申请日：2005-02-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： KYUSHIMA HIROYUKI ,  SHIMOI HIDEKI ,  KAGEYAMA AKIHIRO ,  INOUE KEISUKE ,  ITO MASUO

IPC: H01J43/24 ,  H01J43/12 ,  H01J43/28

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: A photomultiplier having a structure for easily realizing high detection accuracy and microfabrication and its manufacturing method are disclosed. The photomultiplier (1a) comprises an enclosure (2, 3, 4) the inside of which is maintained in a vacuum state. In the enclosure (2, 3, 4), a photoelectric surface (22) for emitting electrons in response to the incident light, an electron multiplying section (31) for cascade-multiplying electrons emitted from the photoelectric surface (22), and an anode (32) for extracting secondary electrons produced by the electron multiplying section (31) are provided. A part of the enclosure (2, 3, 4) is composed of glass substrates (20, 40) each having a flat portion. On the flat portions of the glass substrates (20, 40), the electron multiplying section (31) and the anode (32) are two-dimensionally arranged, respectively.

公开(公告)号：EP1717843A1

公开(公告)日：2006-11-02

申请号：EP05710248.5

申请日：2005-02-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： KYUSHIMA, Hiroyuki, Hamamatsu Photonics K. K. ,  SHIMOI, Hideki, Hamamatsu Photonics K. K. ,  KAGEYAMA, Akihiro, Hamamatsu Photonics K. K. ,  INOUE, Keisuke, Hamamatsu Photonics K. K. ,  ITO, Masuo,2Hamamatsu Photonics K. K.

IPC: H01J43/28 ,  H01J43/12 ,  H01J43/24

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract translation: 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：EP1098347A4

公开(公告)日：2002-04-17

申请号：EP98929679

申请日：1998-06-25

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: H01J1/34 ,  H01J43/08 ,  G01J1/02 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423 ,  H01J2231/50021

Abstract: A photocathode comprising a laminate (10) composed of a UV glass substrate (3) and, successively formed thereof, an SiO2 layer (15), a GaAlN layer (17a), a III - V nitride semiconductor layer (18) and a Cs-O layer (19). The UV glass substrate (3) that absorbs infrared rays can be heat-treated at a high speed by heating with light and can transmit ultraviolet rays, making it possible to introduce ultraviolet rays into the III - V nitride semiconductor layer (18) that effects the photo-electric conversion.

公开(公告)号：EP0287414A2

公开(公告)日：1988-10-19

申请号：EP88400703.0

申请日：1988-03-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Chianelli, Claude

IPC: G01T1/28 ,  H01J43/08

CPC classification number: G01T1/28 ,  H01J43/04 ,  H01J43/08

Abstract: Détecteur de particules, issues notamment d'une source pulsée (25), principalement très peu ionisantes.
Les particules (14) créent une émission d'électrons secondaires (15) en passant à travers une couche très mince de CsI poreux (20) ; des dispositifs multiplicateurs (2, 6) sont prévus. La capacité émissive du CsI poreux est maintenue en inversant par un commutateur (13) le champ électrique appliqué à cette couche par deux électrodes (19, 21), notamment entre deux paquets de particules.

Abstract translation: 特别是从脉冲源（25）发出且处于主要非常差电离的颗粒的检测器。 颗粒（14）在通过非常薄的多孔CsI层（20）时产生二次电子（15）的发射; 提供乘法器装置（2,6）。 通过用开关（13）反转通过两个电极（19,21），特别是在两个粒子包之间施加到该层的电场来维持多孔CsI的发射能力。

公开(公告)号：EP2973713A1

公开(公告)日：2016-01-20

申请号：EP14779717.9

申请日：2014-04-01

Applicant: KLA - Tencor Corporation

Inventor： CHUANG, Yung-Ho Alex ,  BROWN, David L. ,  FIELDEN, John

IPC: H01L27/146

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 µm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

公开(公告)号：EP1717842A1

公开(公告)日：2006-11-02

申请号：EP05719154.6

申请日：2005-02-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： KYUSHIMA, Hiroyuki, c/o Hamamatsu Photonics K.K. ,  SHIMOI, Hideki, c/o Hamamatsu Photonics K.K. ,  KAGEYAMA, Akihiro, c/o Hamamatsu Photonics K.K. ,  INOUE, Keisuke, c/o Hamamatsu Photonics K.K. ,  ITO, Masuo, c/o Hamamatsu Photonics K.K.

IPC: H01J43/24

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.

Abstract translation: 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内部保持真空的外壳，在外壳中具有响应于入射光发射光电子的光电阴极，执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 特别地，在电子倍增器部分中设置有用于从光电阴极进行电子级联倍增的槽部，并且在限定槽部的每对壁部的各个表面上设置有一个或多个具有二次电子的突起 在其表面上形成的发光表面。

公开(公告)号：EP1708243A1

公开(公告)日：2006-10-04

申请号：EP04807699.6

申请日：2004-12-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： OHMURA, Takayuki, c/o Hamamatsu Photonics K.K. ,  KIMURA, Suenori, c/o Hamamatsu Photonics K.K. ,  ITO, Masuo, c/o Hamamatsu Photonics K.K.

IPC: H01J43/26 ,  H01J43/20

CPC classification number: H01J43/08

Abstract: A photomultiplier tube includes: a cathode 3, a plurality of dynodes 107, and a electron lens forming electrode 115. The cathode 3 emits electrons in response to incident light. The plurality of dynodes 107 multiplies electrons emitted from the cathode 3. The electron lens forming electrode 115 is disposed in a prescribed position in relation to an edge of a first dynode 107a positioned in a first stage from the cathode 3 and an edge of a second dynode 107b positioned in a second stage from the cathode 3, and smoothes an equipotential surface in a space between the first dynode 107a and the second dynode 107b along a longitudinal direction of the first dynode. This structure improves time resolution in response to incident light.

Abstract translation: 光电倍增管包括：阴极3，多个倍增电极107和电子透镜形成电极115.阴极3响应于入射光而发射电子。 多个倍增电极107将从阴极3发射的电子相乘。电子透镜形成电极115相对于从阴极3位于第一级的第一倍增电极107a的边缘和第二级的第二级的边缘 倍增极107b定位在来自阴极3的第二级中，并且沿着第一倍增电极的纵向使第一倍增电极107a和第二倍增电极107b之间的空间中的等势面平滑。 该结构提高了响应于入射光的时间分辨率。