公开(公告)号：KR1020100081537A

公开(公告)日：2010-07-15

申请号：KR1020090000824

申请日：2009-01-06

Applicant: 삼성전자주식회사

Inventor： 이성철 ,  서순애 ,  조영진 ,  피웅환 ,  배지영

IPC: G11B5/00 ,  G11B5/02 ,  H01L27/105 ,  G11C11/15

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T29/49069

Abstract: PURPOSE: An information storage device comprising a magnetic structure and methods of manufacturing and operating the same are provided to produce a magnetic domain wall in a magnetic structure in a very simple manner without a separate device for producing a magnetic domain wall. CONSTITUTION: An information storage device comprising a magnetic structure comprises a magnetic structure(100), a magnetic track(200), and a reproduction unit(300). The magnetic track is connected to the magnetic structure. The magnetic track makes direct or indirect contact with a first part of the magnetic structure. At least a part of the magnetic structure and the magnetic track are simultaneously formed with the same processes and the same materials. First and second conducting wires(C1,C2) are connected to one end(E1) and the other end (E2) of the magnetic structure. The reproduction unit reproduces the information recorded in the magnetic track. The reproduction unit is arranged in the magnetic domain(D) which is just next to one end of the magnetic track.

Abstract translation: 目的：提供包括磁性结构的信息存储装置及其制造和操作的信息存储装置，以非常简单的方式在磁性结构中产生磁畴壁，而不需要用于产生磁畴壁的单独装置。 构成：包括磁性结构的信息存储装置包括磁性结构（100），磁迹（200）和再现单元（300）。 磁道连接到磁性结构。 磁道与磁性结构的第一部分直接或间接接触。 磁性结构和磁道的至少一部分同时由相同的工艺和相同的材料形成。 第一和第二导线（C1，C2）连接到磁结构的一端（E1）和另一端（E2）。 再现单元再现记录在磁迹中的信息。 再现单元布置在紧邻磁迹一端的磁畴（D）中。

公开(公告)号：KR1020100075203A

公开(公告)日：2010-07-02

申请号：KR1020080133836

申请日：2008-12-24

Applicant: 삼성전자주식회사

Inventor： 이성철 ,  서순애 ,  조영진 ,  배지영 ,  피웅환 ,  신형순 ,  이승준

IPC: G11B5/00 ,  G11B5/02 ,  H01L27/105 ,  G11C11/15

CPC classification number: G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: PURPOSE: An information storage device and a method of operating the same are provided to increase a storage capacity without a rotating machine using the moving principle of the magnetic wall of a magnetic material. CONSTITUTION: An information storage device comprises a magnetic track(100), a recording/reproducing unit, first and second switching elements(T1,T2), and a third switching element(T3), and a circuit unit. The magnetic track includes magnetic domains(D) and magnetic wall domains((DW)) which are formed between the magnetic domains. The recording/reproducing unit is arranged in a first area(R1) of the magnetic track and comprises first and second electrodes(30a,30b) on its both ends. The first and second switching elements are respectively connected to both ends of the magnetic track. The third switching element is connected to the first electrode of the recording/reproducing unit. The circuit unit controls first to third switching elements. The control unit applies current to at least one of the magnetic track and the recording/reproducing unit.

Abstract translation: 目的：提供一种信息存储装置及其操作方法，以在不使用旋转机器的情况下使用磁性材料的磁壁的移动原理来增加存储容量。 一种信息存储装置，包括磁道（100），记录/再现单元，第一和第二开关元件（T1，T2）和第三开关元件（T3），以及电路单元。 磁道包括在磁畴之间形成的磁畴（D）和磁壁畴（（DW））。 记录/再现单元布置在磁道的第一区域（R1）中，并且在其两端包括第一和第二电极（30a，30b）。 第一和第二开关元件分别连接到磁道的两端。 第三开关元件连接到记录/再现单元的第一电极。 电路单元控制第一至第三开关元件。 控制单元向至少一个磁道和记录/再现单元施加电流。

公开(公告)号：KR1020090105826A

公开(公告)日：2009-10-07

申请号：KR1020090025547

申请日：2009-03-25

Applicant: 삼성전자주식회사

Inventor： 황인준 ,  서순애 ,  김기원 ,  김광석

IPC: G11C11/15 ,  H01L27/115

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  G11C11/15 ,  H01L43/12

Abstract: PURPOSE: A magnetic random access memory device and a method for writing and reading the data are provided to lower the critical current density while minimizing an MR value by storing and reproducing the data by changing the magnetization direction of a free layer. CONSTITUTION: A magnetic random access memory device includes a fixing layer(12), a first non-magnetic layer(13), a data storing data(14), a second nonmagnetic layer(15), and a free layer(16). The magnetization direction of the fixing layer is fixed by a semis to the pinned layer, the magnetization direction is fixed by the anti- ferroelectric material layer(11). The first nonmagnetic layer is formed on the fixing layer. The data storing layer is formed on the first nonmagnetic layer. The second nonmagnetic layer is formed on the data storing layer. The free layer is formed on the second nonmagnetic layer. The free layer changes the magnetization direction.

Abstract translation: 目的：提供一种磁性随机存取存储器件和用于写入和读取数据的方法，以通过改变自由层的磁化方向来存储和再现数据来降低临界电流密度同时最小化MR值。 构成：磁性随机存取存储器件包括固定层（12），第一非磁性层（13），数据存储数据（14），第二非磁性层（15）和自由层（16）。 固定层的磁化方向通过半固定到被钉扎层，磁化方向由抗铁电材料层（11）固定。 第一非磁性层形成在固定层上。 数据存储层形成在第一非磁性层上。 第二非磁性层形成在数据存储层上。 自由层形成在第二非磁性层上。 自由层改变磁化方向。

公开(公告)号：KR1020090079005A

公开(公告)日：2009-07-21

申请号：KR1020080004906

申请日：2008-01-16

Applicant: 삼성전자주식회사

Inventor： 이장원 ,  서순애 ,  조영진 ,  이성철

IPC: G11B5/02 ,  G11B5/00 ,  G11C11/15

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage device using magnetic domain wall movement and including a hard magnetic layer, and methods of operating and manufacturing the same are provided to increase recording density and reduce power consumption by recording information in a hard magnetic layer with thermal stability higher than a soft magnetic layer. An information storage device using magnetic domain wall movement comprises a first magnetic layer(100), a heating unit(200) for heating a first area of the first magnetic layer, and a magnetic field application unit for applying a magnetic field to the first area to create magnetic domain. The wall of the magnetic domain is moved by the current applied to the first magnetic layer. The first magnetic layer is a hard magnetic layer with vertical magnetic anisotropy.

Abstract translation: 提供使用磁畴壁移动并包括硬磁性层的信息存储装置及其操作和制造方法，以通过将信息记录在具有高于软磁性的热稳定性的硬磁性层中来提高记录密度并降低功耗 层。 使用磁畴壁运动的信息存储装置包括第一磁性层（100），用于加热第一磁性层的第一区域的加热单元（200）和用于向第一区域施加磁场的磁场施加单元 以产生磁畴。 通过施加到第一磁性层的电流使磁畴的壁移动。 第一磁性层是具有垂直磁各向异性的硬磁性层。

公开(公告)号：KR1020090037693A

公开(公告)日：2009-04-16

申请号：KR1020070103167

申请日：2007-10-12

Applicant: 삼성전자주식회사

Inventor： 이성철 ,  서순애 ,  조영진 ,  김광석

IPC: G11B5/64 ,  G11B5/62 ,  G11B5/84

CPC classification number: G11B5/64 ,  G11B5/66 ,  G11B5/82 ,  G11C11/14 ,  G11C19/0841 ,  H01F41/32 ,  Y10S977/933 ,  Y10T29/49002

Abstract: A magnetic layer, a method of forming a magnetic layer, an information storage device comprising the magnetic layer and a method of manufacturing the information storage device are provided to reduce power consumption and improve the storage capacity by including a magnetization easy axis parallel to a width direction. A magnetic layer comprises: a magnetization easy axis being made of hard magnetic material and being parallel to a width direction; a vertical magnetic layer which is at a right angle to a substrate; and a horizontal magnetic layer parallel to the substrate. A method of forming a magnetic layer comprises: a step for forming a seed layer(20) in the top of the substrate; and a step for forming a magnetic layer(30) having the hard magnetic material on the seed layer.

Abstract translation: 提供磁性层，形成磁性层的方法，包括磁性层的信息存储装置和信息存储装置的制造方法，以通过包括平行于宽度的磁化容易轴来降低功耗并提高存储容量 方向。 磁性层包括：易磁化轴由硬磁性材料制成并且平行于宽度方向; 与基板成直角的垂直磁性层; 以及与基板平行的水平磁性层。 形成磁性层的方法包括：在衬底的顶部形成种子层（20）的步骤; 以及在种子层上形成具有硬磁性材料的磁性层（30）的工序。

公开(公告)号：KR1020090028335A

公开(公告)日：2009-03-18

申请号：KR1020070093847

申请日：2007-09-14

Applicant: 삼성전자주식회사

Inventor： 조영진 ,  이성철 ,  김광석 ,  배지영 ,  서순애 ,  이장원

IPC: G11B5/00 ,  G11B5/02 ,  G11B5/84

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: An information storage apparatus using magnetic domain wall movement and a manufacturing method thereof are provided to control the magnetic domain wall by deforming a magnetic layer lower material in order to induce magnetic domain and magnetic domain wall formation area on the magnetic layer. An information storage apparatus using magnetic domain wall movement comprises a magnetic track(10) consisting of a plurality of magnetic domains(12) and a current application means and a read/write means connected to the magnetic track. The magnetic track includes a substrate, an intermediate layer in which a first substance area for forming magnetic domain and a second substance area for forming magnetic domain wall(14) are alternately arranged on the top of the substrate, and a magnetic layer in which a magnetic domain formation area and a magnetic domain wall formation area are alternately formed lengthwise on the top of the intermediate layer.

Abstract translation: 提供使用磁畴壁移动的信息存储装置及其制造方法，以通过使磁性层下层材料变形来控制磁畴壁，从而在磁性层上形成磁畴和磁畴壁形成区域。 使用磁畴壁移动的信息存储装置包括由多个磁畴（12）和电流施加装置构成的磁道（10）和连接到磁道的读/写装置。 磁道包括基板，在基板的顶部交替配置有用于形成磁畴的第一物质区域和用于形成磁畴壁（14）的第二物质区域的中间层，以及磁性层，其中 磁畴形成区域和磁畴壁形成区域在中间层的顶部上纵向交替地形成。

公开(公告)号：KR1020090010758A

公开(公告)日：2009-01-30

申请号：KR1020070074120

申请日：2007-07-24

Applicant: 삼성전자주식회사

Inventor： 이장원 ,  정란주 ,  서순애 ,  김동철 ,  정현종

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/28282 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/792

Abstract: A charge trap type memory device including a charge trapping layer is provided to improve retention characteristic and electric charge mobility horizontally like metal. As to a non-volatile memory device in which a tunnel insulating layer(120), a charge trapping layer(130), a blocking insulation film(140) and a top gate electrode(150) are successively laminated on a semiconductor substrate, the charge trapping layer is made of grapheme. The charge trapping layer is made of a plurality of grapheme layers. The tunnel insulating layer is made of silicon carbide. The blocking insulation film is an alumina or a hafnium oxide layer.

Abstract translation: 提供包括电荷捕获层的电荷陷阱型存储装置，以改善水平地像金属的保持特性和电荷迁移率。 对于在半导体衬底上依次层叠有隧道绝缘层（120），电荷俘获层（130），阻挡绝缘膜（140）和顶栅电极（150）的非易失性存储器件， 电荷捕获层由图形制成。 电荷捕获层由多个图形层构成。 隧道绝缘层由碳化硅制成。 阻挡绝缘膜是氧化铝或氧化铪层。

公开(公告)号：KR1020090008009A

公开(公告)日：2009-01-21

申请号：KR1020070071285

申请日：2007-07-16

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  정란주 ,  서순애 ,  김동철 ,  이장원 ,  김언정

IPC: G01R33/00

CPC classification number: G01R33/0047 ,  G01R27/02 ,  G01R33/0023 ,  G01R33/0052

Abstract: A magnetic field sensor and a magnetic field measurement method using the same are provided to operate the magnetic field sensor at a room temperature by using two dimension solid as a conductive line and conductive loop. A magnetic field sensor comprises a device. The device has at least one conductive lines(10,20) and at least one conductive loop(30). The conductive loop is connected to the conductive line. The conductive line and conductive loop comprise two dimension solid. The conductive line and conductive loop comprise at least one of carbon, BN(Boron Nitride), BSCCO(Bismuth Strontium Calcium Copper Oxide), CdTe(Cadmium Telluride) and NbSe 2(Niobium Selenide). The two dimension solid comprises at least one of graphene, a single layer of BN, a half layer of BSCCO, a single layer of CdTe and a single layer of NbSe2.

Abstract translation: 提供磁场传感器和使用其的磁场测量方法，通过使用二维固体作为导电线路和导电回路来在室温下操作磁场传感器。 磁场传感器包括一个装置。 该装置具有至少一个导线（10,20）和至少一个导电回路（30）。 导电回路连接到导线。 导线和导电环包括二维固体。 导电线和导电环包含碳，BN（氮化硼），BSCCO（铋锶钙氧化铜），CdTe（碲化镉）和NbSe 2（硒化铌）中的至少一种。 二维固体包括石墨烯，单层BN，半层BSCCO，单层CdTe和单层NbSe2中的至少一种。

公开(公告)号：KR1020080109549A

公开(公告)日：2008-12-17

申请号：KR1020070058009

申请日：2007-06-13

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  정란주 ,  서순애 ,  김동철 ,  이장원

IPC: H01L29/78

CPC classification number: H01L29/18 ,  H01L21/823807 ,  H01L27/11807 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/2203 ,  H01L29/7606 ,  H01L29/7781 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78618 ,  H01L29/78696

Abstract: A field effect transistor and the logic circuit using the ambipolar material is provided to facilitate forming area-source, drain region and channel region by patterning the ambipolar property material consisting of monolayer on the top of the substrate transistor. A field effect transistor comprises an ambipolar layer(120), a gate electrode(130), and an insulating layer(112). The ambipolar layer comprises an area-source(121) and drain region(122), and a channel region(123) of the interval. The ambipolar layer area-source, and the drain region and channel region are integrately formed. The gate electrode is formed in the channel region. The insulating layer isolates the gate electrode from the ambipolar layer. The width of the drain region and area-source is broader than the channel region.

Abstract translation: 提供场效应晶体管和使用双极材料的逻辑电路，以通过在衬底晶体管的顶部上构图由单层组成的双极性特性材料来形成区域源极，漏极区域和沟道区域。 场效应晶体管包括双极层（120），栅电极（130）和绝缘层（112）。 双极层包括区域源（121）和漏极区（122）以及间隔的沟道区（123）。 双极层面积源，漏极区域和沟道区域整合形成。 栅电极形成在沟道区中。 绝缘层将栅电极与双极层隔离。 漏极区域和面积源的宽度比通道区域宽。

公开(公告)号：KR1020080048315A

公开(公告)日：2008-06-02

申请号：KR1020060118560

申请日：2006-11-28

Applicant: 삼성전자주식회사

Inventor： 서순애 ,  박영수 ,  정란주 ,  이명재 ,  김동철 ,  안승언

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/165 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  G11C13/0004 ,  H01L45/1616 ,  H01L45/1625

Abstract: A method for manufacturing a resistance random access memory device is provided to remove the variation of resistances of a resistance layer by maintaining constantly a current path of the resistance random access memory device. A resistance random access memory device includes a lower electrode(21), a resistance layer(22) including a metal dopant formed on the lower electrode, and an upper electrode(23) formed on the resistance layer. The metal dopant is composed of a transition metal. The resistance layer is composed of a transition metal compound. The transition metal compound includes one material of a Ni oxide, a Ti oxide, an Hf oxide, a Zr oxide, a Zn oxide, a W oxide, a Co oxide, or an Nb oxide. The resistance layer is composed of the Ni oxide including a Ni dopant.

Abstract translation: 提供一种用于制造电阻随机存取存储器件的方法，以通过不断地维持电阻随机存取存储器件的电流路径来消除电阻层的电阻的变化。 电阻随机存取存储器件包括下电极（21），包括形成在下电极上的金属掺杂剂的电阻层（22）和形成在电阻层上的上电极（23）。 金属掺杂剂由过渡金属组成。 电阻层由过渡金属化合物构成。 过渡金属化合物包括Ni氧化物，Ti氧化物，Hf氧化物，Zr氧化物，Zn氧化物，W氧化物，Co氧化物或Nb氧化物的一种材料。 电阻层由包含Ni掺杂剂的Ni氧化物构成。