公开(公告)号：KR1020030094688A

公开(公告)日：2003-12-18

申请号：KR1020020031942

申请日：2002-06-07

Applicant: 삼성전자주식회사

Inventor： 홍은기 ,  한정남 ,  구주선

IPC: H01L21/76

Abstract: PURPOSE: A trench isolation method is provided to prevent the generation of seam or void by using a fluid insulation layer as a trench insulation layer, and to prevent recess in the trench insulation layer by eliminating a silicon nitride layer used as an etch stop layer through a selective dry etch process. CONSTITUTION: A mask layer pattern for defining an isolation region is formed on a substrate(102). The substrate is etched to form a trench by using the mask layer pattern as an etch mask. A fluid trench insulation layer(108) is formed in the trench and on the mask layer pattern. The trench insulation layer is planarized until the surface of the mask layer pattern is exposed. The mask layer pattern is removed through a selective dry etch process.

Abstract translation: 目的：提供沟槽隔离方法，以通过使用流体绝缘层作为沟槽绝缘层来防止接缝或空隙的产生，并且通过消除用作蚀刻停止层的氮化硅层来防止沟槽绝缘层中的凹陷 选择性干蚀刻工艺。 构成：在衬底（102）上形成用于限定隔离区域的掩模层图案。 通过使用掩模层图案作为蚀刻掩模来蚀刻衬底以形成沟槽。 在沟槽和掩模层图案上形成流体沟槽绝缘层（108）。 沟槽绝缘层被平坦化，直到掩模层图案的表面露出。 通过选择性干蚀刻工艺去除掩模层图案。

公开(公告)号：KR1020030069375A

公开(公告)日：2003-08-27

申请号：KR1020020008976

申请日：2002-02-20

Applicant: 삼성전자주식회사

Inventor： 홍은기 ,  박선후 ,  구주선

IPC: H01L21/3105

Abstract: PURPOSE: A method for fabricating a silicon oxide layer is provided to control consecutive oxidation of the silicon oxide layer and maintain stability of the silicon oxide layer even if time goes by through performing a plasma process using a spin-on-glass(SOG) solution when the silicon oxide layer is formed. CONSTITUTION: An SOG solution is applied to the upper surface of a substrate(10) having on which a step is formed. The SOG layer is baked to be transformed into a silicon oxide layer. The silicon oxide layer is processed by using plasma to control the variation of the etch rate of the silicon oxide layer even if time goes by.

Abstract translation: 目的：提供一种制造氧化硅层的方法，以控制氧化硅层的连续氧化并保持氧化硅层的稳定性，即使通过使用旋涂玻璃（SOG）溶液进行等离子体处理的时间过去 当形成氧化硅层时。 构成：将SOG溶液施加到其上形成有台阶的基板（10）的上表面。 烘烤SOG层以转变成氧化硅层。 通过使用等离子体来处理氧化硅层，以控制氧化硅层的蚀刻速率的变化，即使时间过去。

公开(公告)号：KR100354441B1

公开(公告)日：2002-09-28

申请号：KR1020000082829

申请日：2000-12-27

Applicant: 삼성전자주식회사

Inventor： 구주선 ,  홍은기 ,  김홍근 ,  홍진기

IPC: H01L21/316

公开(公告)号：KR1020020068672A

公开(公告)日：2002-08-28

申请号：KR1020010008859

申请日：2001-02-22

Applicant: 삼성전자주식회사

Inventor： 조영주 ,  홍은기 ,  이주범

IPC: H01L21/31

CPC classification number: H01L21/02222 ,  H01L21/02164 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/3125

Abstract: PURPOSE: A method for forming an interlayer dielectric is provided to prevent generation of a crack when using an SOG(Spin On Glass) coating layer as a capping oxide layer. CONSTITUTION: An insulating layer is formed on a substrate formed with an active device and a wafer having a metallic line pattern is prepared(S10). An insulating layer for covering the metallic line pattern is formed by depositing a BPSG, an HDP oxide layer, and a polysilazane SOG layer(S12). The insulating layer is polished by supplying a slurry using SiO2, CeO2, Al2O3, and Mn2O3 as a base(S14). A coating layer is formed on the result material having a stepped portion by using a polysilazane coating solution(S16). A pre-baking process for a coating layer is performed under temperature of 50 to 350 degrees centigrade during 1 to 5 minutes(S18). A hard baking process is performed(S20). An annealing process is performed(S22).

Abstract translation: 目的：提供一种用于形成层间电介质的方法，以防止当使用SOG（旋转玻璃）涂层作为封盖氧化物层时产生裂纹。 构成：在形成有有源器件的衬底上形成绝缘层，并制备具有金属线图案的晶片（S10）。 通过沉积BPSG，HDP氧化物层和聚硅氮烷SOG层来形成用于覆盖金属线图案的绝缘层（S12）。 通过使用SiO 2，CeO 2，Al 2 O 3和Mn 2 O 3作为基底供给浆料来抛光绝缘层（S14）。 通过使用聚硅氮烷涂布液，在具有阶梯部的结果材料上形成涂层（S16）。 在50〜350℃的温度下，在1〜5分钟内进行涂层的预烘烤工序（S18）。 进行硬烘烤处理（S20）。 进行退火处理（S22）。