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公开(公告)号：KR101172358B1
公开(公告)日：2012-08-14
申请号：KR1020100020115
申请日：2010-03-05
Applicant: 한국과학기술연구원
Abstract: 유도 결합형 플라즈마의 반응성 이온 식각 장비를 이용한 원스톱 공정에 의한 하향식 실리콘 나노선 제조 방법이 개시된다. 상기 실리콘 나노선 제조 방법은 포토리소그래피 공정을 통해 기판의 소자 형성층에 포토레지스트 선 패턴을 형성하는 단계, 상기 포토레지스트 선 패턴의 크기 축소화를 통해 나노미터 선폭의 포토레지스트 선 패턴을 형성하는 단계, 및 상기 나노미터 선폭의 포토레지스트 선 패턴을 마스크층으로 하여 상기 소자 형성층으로 실리콘 나노선을 형성하는 단계를 포함한다.
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公开(公告)号：KR1020120012139A
公开(公告)日：2012-02-09
申请号：KR1020100074104
申请日：2010-07-30
Applicant: 한국과학기술연구원
IPC: H01L21/677 , B25J13/08 , B65G49/07
CPC classification number: H01L21/67742 , B25J13/087 , H01L21/67265 , H01L21/68707 , Y10S414/141
Abstract: PURPOSE: An apparatus for maintaining wafer loading is provided to prevent wafer slip by driving a wafer separation prevention driving part which is mounted on a wafer carrier. CONSTITUTION: A wafer(200) is loaded on a wafer carrier. A wafer detection part(10) is combined with the wafer carrier and senses the wafer. A wafer separation prevention driving part is combined with one side of the wafer carrier. The wafer separation prevention driving part prevents wafer from being separated. A controlling part(30) supplies a driving control signal to the wafer separation prevention driving part and maintains a wafer loading state.
Abstract translation: 目的：提供一种用于维持晶片负载的装置，以通过驱动安装在晶片载体上的晶片分离防止驱动部分来防止晶片滑移。 构成：将晶片（200）装载在晶片载体上。 将晶片检测部分（10）与晶片载体组合并感测晶片。 晶片分离防止驱动部分与晶片载体的一侧结合。 晶片分离防止驱动部防止晶片分离。 控制部（30）将驱动控制信号提供给晶片分离防止驱动部，并保持晶片装载状态。
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公开(公告)号：KR1020110100993A
公开(公告)日：2011-09-15
申请号：KR1020100020115
申请日：2010-03-05
Applicant: 한국과학기술연구원
CPC classification number: B82B3/0095 , B82Y40/00 , G03F7/0002
Abstract: 유도 결합형 플라즈마의 반응성 이온 식각 장비를 이용한 원스톱 공정에 의한 하향식 실리콘 나노선 제조 방법이 개시된다. 상기 실리콘 나노선 제조 방법은 포토리소그래피 공정을 통해 기판의 소자 형성층에 포토레지스트 선 패턴을 형성하는 단계, 상기 포토레지스트 선 패턴의 크기 축소화를 통해 나노미터 선폭의 포토레지스트 선 패턴을 형성하는 단계, 및 상기 나노미터 선폭의 포토레지스트 선 패턴을 마스크층으로 하여 상기 소자 형성층으로 실리콘 나노선을 형성하는 단계를 포함한다.
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公开(公告)号：KR1020110067693A
公开(公告)日：2011-06-22
申请号：KR1020090124390
申请日：2009-12-15
Applicant: 한국과학기술연구원
IPC: H01L31/054
CPC classification number: Y02A40/256 , Y02A40/266 , Y02E10/50 , H01L31/054
Abstract: PURPOSE: An apparatus for condensing sunlight is provided to increase the photoelectric conversion efficiency of a solar cell by collecting uneven light over the surface of the solar cell. CONSTITUTION: In an apparatus for condensing sunlight, A body(12) has a disc shape including one side facing to a condensing side of a solar cell. A plurality of prisms(14) is formed in one side. . A plurality of prisms are formed in compartmentalized collection areas having identical space between them along circumferential direction. A plurality of prisms has different angles at each collection area Incident lights on the prisms are reflected by same angle and are projected to the condensing side. The condensing side has uniform light distribution substantially.
Abstract translation: 目的：提供一种用于聚光太阳光的装置，通过在太阳能电池表面上收集不均匀的光来提高太阳能电池的光电转换效率。 构成：在用于聚集太阳光的装置中，主体（12）具有盘状，包括面向太阳能电池的冷凝侧的一侧。 多个棱镜（14）形成在一侧。 。 多个棱镜形成在沿圆周方向具有相同间隔的间隔收集区域中。 多个棱镜在每个收集区域具有不同的角度棱镜上的入射光以相同的角度反射并且被投射到聚光侧。 冷凝侧基本上具有均匀的光分布。
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公开(公告)号：KR1020110015176A
公开(公告)日：2011-02-15
申请号：KR1020090072760
申请日：2009-08-07
Applicant: 한국과학기술연구원
IPC: H01L31/04
Abstract: PURPOSE: A solar cell with a surface structure for reducing reflectivity and a manufacturing method thereof are provided to maximize photoelectric conversion efficiency by uniformly maintaining the reflectivity of a solar cell regardless of the wavelength of light. CONSTITUTION: A solar cell includes a silicon substrate. The silicon substrate includes a first surface and a second surface to which light is inputted. The second surface is opposite to the first surface. A first surface(101) includes a first opening(1011) and a second opening(1013). The direction of the first opening is inclined to the first surface.
Abstract translation: 目的：提供具有用于降低反射率的表面结构的太阳能电池及其制造方法，以通过均匀地维持太阳能电池的反射率而使光的转换效率最大化，而与光的波长无关。 构成：太阳能电池包括硅衬底。 硅衬底包括第一表面和输入光的第二表面。 第二表面与第一表面相对。 第一表面（101）包括第一开口（1011）和第二开口（1013）。 第一开口的方向倾斜于第一表面。
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Patent Agency Ranking
公开(公告)号：KR100835666B1
公开(公告)日：2008-06-09
申请号：KR1020070000143
申请日：2007-01-02
Applicant: 한국과학기술연구원
IPC: H01L21/203 , B82B3/00 , B82Y40/00
CPC classification number: C30B29/60 , C30B29/16 , Y10S977/774 , Y10T428/259
Abstract: A method for forming a ZnO nano-crystal directly on a silicon substrate is provided to omit additional processes when forming a silicon substrate based photoelectric cell by forming the amorphous ZnO-nano crystal within a Zn-Si-O complex thin film directly. In a method for forming a ZnO nano-crystal directly on a silicon substrate, a Zn-Si-O complex thin film is formed on a semiconductor substrate, and the Zn-Si-O complex thin film is annealed. Wherein, the ZnO nano crystal is formed within an amorphous Zn-Si-O complex thin film on a silicon substrate, and the Zn-Si-O complex thin film is formed by using a sputtering method.
Abstract translation: 提供了直接在硅衬底上形成ZnO纳米晶体的方法，以通过在Zn-Si-O络合物薄膜内形成非晶ZnO纳米晶体直接形成基于硅衬底的光电池来省略附加工艺。 在直接在硅衬底上形成ZnO纳米晶体的方法中，在半导体衬底上形成Zn-Si-O络合物薄膜，对Zn-Si-O络合物薄膜进行退火。 其中，ZnO纳米晶体形成在硅衬底上的非晶态Zn-Si-O复合薄膜中，并且通过使用溅射法形成Zn-Si-O络合物薄膜。
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公开(公告)号：KR100509569B1
公开(公告)日：2005-08-23
申请号：KR1020040000357
申请日：2004-01-05
Applicant: 한국과학기술연구원
IPC: H01L21/8239
Abstract: 본 발명은 상변화 물질의 접촉면적을 최대한 줄임으로써 저전력 및 고집적 특성을 갖는 상변화 물질을 이용한 상변화 메모리 및 그 제조방법에 관한 것이다. 이를 위해, 본 발명은 절연막/하부전극/기판에 상변화 물질을 증착하고 건식 식각을 통해 수직으로 에칭하여 절연막/하부전극의 벽면을 따라 상변화 물질의 스페이서가 형성되도록 하여 하부전극의 두께로 상변화 물질의 접촉면적이 결정될 수 있도록 한다. 또한, 트렌치 구조의 내부에 하부전극을 형성하고 상변화 물질을 증착한 후 건식 식각을 통해 수직으로 에칭하여 절연막의 벽면을 따라 상변화 물질의 스페이서가 형성되도록 하여 상변화 물질의 두께로 상변화 물질의 접촉면적이 결정될 수 있도록 한다.
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公开(公告)号：KR1020050019295A
公开(公告)日：2005-03-03
申请号：KR1020030056953
申请日：2003-08-18
Applicant: 한국과학기술연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for growing quantum wires with various sizes on one substrate is provided by growing a triangular epitaxial layer with various sizes through a selective epitaxial growing method. CONSTITUTION: An oxide layer is deposited on a substrate. The oxide layer is etched so as to have a various sized area without an oxide layer. A triangular structure of the various sized area without the oxide layer is grown by a selective epitaxial growing method. The growing characteristic and surface characteristic in an epitaxial layer of the triangular structure is improved by controlling the rate of epitaxial growth. The rate of epitaxial growth is 0.52μm/hour in case of AlGaAs, and 0.7μm/hour in case of GaAs or InGaAs.
Abstract translation: 目的：通过选择性外延生长方法生长具有各种尺寸的三角形外延层，在一个衬底上生长具有各种尺寸的量子线的方法。 构成：在衬底上沉积氧化物层。 氧化层被蚀刻以具有不具有氧化物层的各种尺寸的区域。 通过选择性外延生长方法生长不含氧化物层的各种尺寸区域的三角形结构。 通过控制外延生长速率来改善三角形结构的外延层中的生长特性和表面特性。 在AlGaAs的情况下，外延生长率为0.52μm/小时，在GaAs或InGaAs的情况下为0.7μm/小时。
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公开(公告)号：KR1020040103026A
公开(公告)日：2004-12-08
申请号：KR1020030034908
申请日：2003-05-30
Applicant: 한국과학기술연구원
IPC: H01L21/768
Abstract: PURPOSE: A connecting method of a ferroelectric memory cell and a ferroelectric memory thereby are provided to perform a reading process and a writing process on a selected cell alone without interference between cells by connecting upper electrodes and sources of FETs(Field Effect Transistors) in columns and lower electrodes and drains of the FETs in rows using bit lines and word lines. CONSTITUTION: A ferroelectric memory cell array includes a plurality of ferroelectric memory cells. Each cell(1) includes a FET. The FET includes an upper electrode(2) and a lower electrode(3) of a gate with a metal-ferroelectric-metal-insulator-silicon structure, a source(4) and a drain(5). The upper electrode is connected to a write bit line(6) in column. The lower electrode is connected to a write word line(7) in row. The source is connected to a read bit line(9) in column. The drain is connected to a read word line(8) in row.
Abstract translation: 目的：提供强电介质存储单元和铁电存储器的连接方法，以通过将上电极和FET源（场效应晶体管）连接在列中来对单元进行读取处理和写入处理，而不会干扰单元之间的干扰 以及使用位线和字线的行中的FET的下电极和漏极。 构成：铁电存储单元阵列包括多个铁电存储单元。 每个单元（1）包括FET。 FET包括具有金属 - 铁电 - 金属 - 绝缘体 - 硅结构的栅极的上电极（2）和下电极（3），源极（4）和漏极（5）。 上电极连接到列中的写位线（6）。 下电极连接到行的写字线（7）。 源连接到列中的读取位线（9）。 漏极连接到行中的读取字线（8）。
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公开(公告)号：KR1020040098116A
公开(公告)日：2004-11-20
申请号：KR1020030030267
申请日：2003-05-13
Applicant: 한국과학기술연구원
IPC: H01L27/105
Abstract: PURPOSE: A method of manufacturing a ferroelectric gate is provided to improve characteristics of the gate by using oxygen plasma RTA(Rapid Thermal Annealing). CONSTITUTION: Oxygen plasma RTA is performed for a ferroelectric thin film under a predetermined pressure. The ferroelectric thin film is used as a gate oxide layer. The temperature of RTA is in the range of 600 to 700 °C. The RTA period is in the range of 5 to 10 minutes. The power of 30 to 50 Watt is applied in order to generate oxygen plasma. The predetermined pressure of the RTA is 10¬-1 to 10¬-2 Torr. Oxygen concentration of the ferroelectric thin film is increased due to the oxygen plasma RTA.
Abstract translation: 目的：提供一种制造铁电栅极的方法，以通过使用氧等离子体RTA（快速热退火）来改善栅极的特性。 构成：在预定压力下对铁电薄膜进行氧等离子体RTA。 铁电薄膜用作栅氧化层。 RTA的温度在600-700℃的范围内。 RTA周期在5到10分钟的范围内。 施加30至50瓦的功率以产生氧等离子体。 RTA的预定压力为10 -1 -1 -10 -2 Torr。 由于氧等离子体RTA，铁电薄膜的氧浓度增加。
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