公开(公告)号：SG171843A1

公开(公告)日：2011-07-28

申请号：SG2011038601

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

公开(公告)号：AU2003245583A8

公开(公告)日：2004-01-19

申请号：AU2003245583

申请日：2003-06-20

Applicant: LAM RES CORP

Inventor： ELLINGBOE BERT ,  LOEWENHARDT PETER ,  FISCHER ANDREAS ,  KUTHI ANDY ,  VAHEDI VAHID

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

公开(公告)号：SG194879A1

公开(公告)日：2013-12-30

申请号：SG2013083175

申请日：2012-05-08

Applicant: LAM RES CORP

Inventor： FANG TONG ,  KIM YUNSANG S ,  FISCHER ANDREAS

Abstract: A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.

公开(公告)号：SG174503A1

公开(公告)日：2011-11-28

申请号：SG2011068285

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  KOSHIISHI AKIRA ,  FISCHER ANDREAS

Abstract: A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

公开(公告)号：SG171840A1

公开(公告)日：2011-07-28

申请号：SG2011038577

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

Abstract: A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

公开(公告)号：AT470949T

公开(公告)日：2010-06-15

申请号：AT04751199

申请日：2004-04-29

Applicant: LAM RES CORP

Inventor： LOEWENHARDT PETER ,  SRINIVASAN MUKUND ,  FISCHER ANDREAS

IPC: H01J37/32

Abstract: A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.

公开(公告)号：AT371261T

公开(公告)日：2007-09-15

申请号：AT00948512

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：AU2003233655A1

公开(公告)日：2003-12-12

申请号：AU2003233655

申请日：2003-05-23

Applicant: LAM RES CORP

Inventor： KENNEDY WILLIAM S ,  LOEWENHARDT PETER ,  TRUSSELL DAVID ,  FISCHER ANDREAS

IPC: H05H1/46 ,  C23C16/509 ,  C25B11/00 ,  H01J37/32 ,  H01L21/3065

Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

公开(公告)号：AU1345102A

公开(公告)日：2002-04-15

申请号：AU1345102

申请日：2001-10-05

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  FISCHER ANDREAS

IPC: H05H1/46 ,  B01J19/08 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A method for processing a wafer in a plasma processing chamber using single frequency RF power is provided. The method includes generating a single modulated RF power and providing a wafer over an electrostatic chuck in a plasma processing chamber. The electrostatic chuck includes a first electrode disposed under the wafer for receiving the modulated RF power, and a second electrode disposed over the wafer. The method further includes receiving the modulated RF power, by the plasma processing chamber, and generating plasma and ion bombardment energy in the plasma processing chamber for processing the wafer in response to the modulated RF power.