公开(公告)号：US20150243823A1

公开(公告)日：2015-08-27

申请号：US14428736

申请日：2013-08-08

Applicant: ROBERT BOSCH GmbH

Inventor： Ingo Herrmann ,  Karl-Franz Reinhart ,  Tjalf Pirk

IPC: H01L31/09 ,  G01J5/00 ,  H01L31/18

CPC classification number: H01L31/09 ,  B81B2201/0207 ,  B81B2207/012 ,  B81B2207/097 ,  B81C1/00238 ,  B81C2203/0792 ,  G01J5/00 ,  G01J5/045 ,  G01J5/20 ,  H01L23/10 ,  H01L23/26 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L27/14634 ,  H01L27/1465 ,  H01L27/1469 ,  H01L31/18 ,  H01L2224/05609 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/2745 ,  H01L2224/29109 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/94 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2224/83 ,  H01L2924/00

Abstract: An arrangement of at least two wafers for detecting electromagnetic radiation, in particular far infrared radiation, comprises a first wafer and a second wafer. The first wafer includes a microsystem formed as a sensor array. The microsystem is configured to register electromagnetic radiation and provide a corresponding sensor signal. The second wafer includes an integrated circuit formed as an evaluation circuit that is coupled to the sensor array. The integrated circuit is configured to detect the electromagnetic radiation with the aid of the sensor signal provided.

Abstract translation: 用于检测电磁辐射，特别是远红外辐射的至少两个晶片的布置包括第一晶片和第二晶片。 第一晶片包括形成为传感器阵列的微系统。 微系统被配置为注册电磁辐射并提供相应的传感器信号。 第二晶片包括形成为耦合到传感器阵列的评估电路的集成电路。 集成电路被配置为借助所提供的传感器信号检测电磁辐射。

公开(公告)号：US20150145074A1

公开(公告)日：2015-05-28

申请号：US14091492

申请日：2013-11-27

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Andreas Meiser ,  Till Schloesser ,  Wolfgang Werner

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/12 ,  G01P15/125 ,  G01N27/22

CPC classification number: B81B3/0021 ,  B81B3/0086 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C1/0015 ,  G01H1/00 ,  G01H11/06 ,  G01L9/0072 ,  G01L9/12 ,  G01N27/223 ,  G01P15/125

Abstract: A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.

Abstract translation: MEMS器件包括固定电极和可移动​​电极，与固定电极隔离并间隔一定距离。 可移动电极通过一个或多个包括绝缘材料的间隔件悬置在固定电极上，其中可动电极横向地固定到一个或多个间隔件上。

公开(公告)号：US20150115160A1

公开(公告)日：2015-04-30

申请号：US14504749

申请日：2014-10-02

Applicant: Robert Bosch GmbH

Inventor： Gary O'Brien ,  Fabian Purkl ,  Ando Feyh ,  Bongsang Kim ,  Ashwin K Samarao ,  Thomas Rocznik ,  Gary Yama

IPC: B81B7/00 ,  B81B7/02 ,  G01J5/02

CPC classification number: B81B7/0019 ,  B81B7/02 ,  B81B2201/0207 ,  B81B2207/11 ,  G01J5/024 ,  G01J5/0245 ,  G01J5/0853 ,  G01J5/20 ,  G02F2201/083 ,  H01L2924/1461 ,  Y10T29/4913

Abstract: In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.

Abstract translation: 在一个实施例中，MEMS传感器组件包括衬底，由衬底支撑并包括与衬底间隔开的第一吸收体的第一传感器和由衬底支撑的第二传感器，并且包括（i）与第二吸收体间隔开的第二吸收体 衬底，和（ii）与第二吸收体一体地形成并从第二吸收体向下延伸到衬底的至少一个热短路部分，从而将第二吸收体热短路到衬底。

公开(公告)号：US20150014854A1

公开(公告)日：2015-01-15

申请号：US13939400

申请日：2013-07-11

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas Allan Kocian

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract translation: 电子装置及其制造方法。 一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。 在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。 可以进一步激活钛材料的阻焊层作为吸气剂。 在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。

公开(公告)号：US20140268523A1

公开(公告)日：2014-09-18

申请号：US14207461

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H05K7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了一种穿戴式装置，其具有被配置成检测和测量感兴趣的不同参数的多个传感器。 可佩戴装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 可穿戴设备将待测量的第一参数直接耦合到直接传感器。 相反，可佩戴装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上将其它传感器添加到可穿戴装置中。 这支持集成多个传感器，以减少外形，成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US07884328B2

公开(公告)日：2011-02-08

申请号：US12181871

申请日：2008-07-29

Applicant: Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

Inventor： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

IPC: H01L27/14

CPC classification number: G01J5/20 ,  B81B3/007 ,  B81B2201/0207 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

Abstract translation: 本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。 该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分 通过悬臂结构从衬底隔离，并去除牺牲层。

公开(公告)号：US20100045144A1

公开(公告)日：2010-02-25

申请号：US12545524

申请日：2009-08-21

Applicant: Nobuyuki Koike ,  Takashi Tamura

Inventor： Nobuyuki Koike ,  Takashi Tamura

IPC: H01L41/04 ,  H01L41/22

CPC classification number: B81B3/0081 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/032 ,  G01C19/56 ,  G01C25/00 ,  H01L41/0933 ,  H01L41/1132 ,  H01L41/1136 ,  H01L41/316 ,  Y10T29/42

Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1−Y)O3+X(0≦X≦0.3, 0≦Y≦0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

Abstract translation: 提供一种压电装置，包括基板，第一电极膜，压电膜和第二电极膜。 第一电极膜形成在基板上。 压电薄膜由Pb1 + X（ZrYTi1-Y）O3 + X（0＆nlE; X＆lt; NlE; 0.3,0＆nlE; Y＆nlE; 0.55）表示，通过X射线衍射法测得的烧绿石相的峰强度为10％ 相对于钙钛矿相的（100）面取向，（001）面取向，（110）面取向，（101）面取向和（111）面取向的峰值强度之和小， 所述压电膜形成在所述第一电极膜上，膜厚度为400nm以上且1000nm以下。 第二电极膜层叠在压电膜上。

公开(公告)号：WO2019043299A1

公开(公告)日：2019-03-07

申请号：PCT/FI2018/050619

申请日：2018-08-31

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： VARPULA, Aapo ,  GUO, Bin

IPC: G01J5/20 ,  G01J5/02 ,  G01J5/04 ,  G01J5/08 ,  B81C1/00

CPC classification number: G01J5/20 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C2203/036 ,  G01J3/26 ,  G01J5/0215 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/045 ,  G01J5/0806 ,  G01J5/084 ,  G01J5/0862 ,  G01J5/601 ,  G01J5/602 ,  G01J2005/202

Abstract: A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, a back reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

公开(公告)号：WO2016057007A1

公开(公告)日：2016-04-14

申请号：PCT/US2014/026562

申请日：2014-03-13

Applicant: GOGOI, Bishnu

Inventor： GOGOI, Bishnu

IPC: H01L27/14

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

公开(公告)号：WO2016009126A1

公开(公告)日：2016-01-21

申请号：PCT/FR2015/051869

申请日：2015-07-07

Applicant: ULIS

Inventor： FAVIER, Jérôme ,  BUNEL, David

IPC: B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0145 ,  B81C2203/019 ,  G01J5/20 ,  H01L23/564 ,  H01L31/186 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Un procédé de fabrication d'un dispositif ayant un composant microélectronique logé dans un boîtier hermétique sous vide, comprend la réalisation d'un piège à gaz dans ledit boîtier, le pompage et le chauffage du dispositif de manière à dégazer des éléments logés dans ledit boîtier, après ledit pompage, le scellement hermétique du boîtier sans utiliser de flux. En outre, chaque matériau constitutif du dispositif susceptible de dégazer dans le volume interne est un matériau minéral, le piège à gaz est apte à piéger sensiblement uniquement de l'hydrogène et est inerte à l'oxygène et/ou à l'azote et le chauffage et le scellement sont réalisés à une température inférieure à 300 °C.

Abstract translation: 一种制造具有容纳在气密密封真空壳体中的微电子部件的装置的方法，包括在所述壳体中产生气阱，泵送和加热装置，以便在所述泵送之后从容纳在所述壳体中的元件释放气体， 密封壳体而不使用助焊剂。 此外，制造能够脱气到内部容积的装置的每种材料是矿物材料，气阱能够仅基本捕获氢并且对氧和/或氮是惰性的，并且加热和密封是 在低于300℃的温度下进行。