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    Method for producing a component, and sensor element
    72.
    发明授权
    Method for producing a component, and sensor element 有权
    用于制造组件和传感器元件的方法

    公开(公告)号：US08530261B2

    公开(公告)日：2013-09-10

    申请号：US12522693

    申请日：2007-11-28

    Applicant: Torsten Kramer ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster ,  Christoph Schelling

    Inventor： Torsten Kramer ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster ,  Christoph Schelling

    IPC: H01L21/00

    CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C2201/0115 ,  G01L19/0038

    Abstract: A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer. The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step, in the anisotropic etching step, an etching channel from the back side of the substrate being produced, which terminates beneath the first diaphragm layer in the vicinity of the cavity, and at least the end region of this etching channel being expanded in the isotropic etching step until the etching channel is connected to the cavity.

    Abstract translation: 一种用于制造具有形成在所述部件的上表面中的至少一个光阑的部件的方法，所述至少一个光阑形成在所述部件的上表面中，所述光阑跨越空腔，并且具有至少一个从所述部件的后侧到所述腔的进入开口，至少一个第一隔膜层 并且所述空腔从所述部件的上表面在单片半导体衬底中产生，并且所述存取开口在时间上受限制的蚀刻步骤中从所述衬底的背面制造。 进入口放置在基板材料到达第一隔膜层的区域中。 用于制造进出口的蚀刻工艺包括至少一个各向异性蚀刻步骤和至少一个各向同性蚀刻步骤，在各向异性蚀刻步骤中，从所述基板的背面制造蚀刻通道，其终止在第一隔膜层下方 该腔的附近，并且至少该蚀刻通道的端部区域在各向同性蚀刻步骤中扩展，直到蚀刻通道连接到空腔。

    Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate
    74.
    发明授权
    Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate 有权
    用于制造从衬底的后部进入的微机械膜结构的方法

    公开(公告)号：US08519494B2

    公开(公告)日：2013-08-27

    申请号：US12737037

    申请日：2009-04-21

    Applicant: Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

    Inventor： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

    IPC: G01P15/08

    CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

    Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

    Abstract translation: 用于制造从衬底的后部进入的微机械膜结构的方法包括：n掺杂p掺杂硅衬底表面的至少一个连续的格子型区域; 在n掺杂的晶格结构下面蚀刻衬底区域; 在该n型掺杂晶格结构下面的该衬底区域中产生空腔; 在n掺杂晶格结构上生长第一单晶硅外延层; n掺杂晶格结构中的至少一个开口的尺寸设计成使得其不被生长的第一外延层闭合​​，而是形成到腔的通路口; 在空腔壁上形成氧化物层; 产生到空腔的后部通路，空腔壁上的氧化层用作蚀刻停止层; 并且在空腔的区域中去除氧化物层。

    Method for producing an electro-mechanical microsystem
    75.
    发明授权
    Method for producing an electro-mechanical microsystem 有权
    电 - 机微系统的制造方法

    公开(公告)号：US08324073B2

    公开(公告)日：2012-12-04

    申请号：US13045040

    申请日：2011-03-10

    Applicant: Frederic-Xavier Gaillard ,  Fabrice Nemouchi

    Inventor： Frederic-Xavier Gaillard ,  Fabrice Nemouchi

    IPC: H01L21/76

    CPC classification number: B81C1/00476 ,  B81C2201/0115

    Abstract: A method for producing an electro-mechanical microsystem including movable mechanical parts, said method including a phase of releasing at least one movable mechanical part, wherein the releasing phase includes the following steps: formation of at least one porous zone in a first wafer of a semiconductor material; formation of at least a pattern of a material that makes at least one movable mechanical part on a front face of the first wafer and at least a partial encapsulation of the pattern in a sacrificial layer; release of the movable mechanical part through a rear face of the first wafer throughout the porous zone, using a solvent of the sacrificial layer.

    Abstract translation: 一种用于生产包括可移动机械部件的机电微系统的方法，所述方法包括释放至少一个可移动机械部件的相，其中所述释放阶段包括以下步骤：在第一晶片中形成至少一个多孔区 半导体材料; 形成至少在第一晶片的正面上形成至少一个可移动机械部件并且至少部分地将图案封装在牺牲层中的材料的图案; 使用牺牲层的溶剂，通过整个多孔区域通过第一晶片的后表面释放可动机械部件。

    CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining
    76.
    发明授权
    CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining 失效
    通过多孔硅微加工制造单晶硅微机械元件的CMOS集成工艺

    公开(公告)号：US08115240B2

    公开(公告)日：2012-02-14

    申请号：US12314547

    申请日：2008-12-12

    Applicant: Antalné Ádám ,  István Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Károlyné Payer ,  Eva Vazsonyi

    Inventor： Antalné Ádám ,  István Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Károlyné Payer ,  Eva Vazsonyi

    IPC: H01L29/84 ,  H01L41/22 ,  H01L21/8238

    CPC classification number: B81C1/00246 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0115 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01L5/228 ,  G06F3/0414 ,  Y10T29/42

    Abstract: A process for fabricating a monocrystalline silicon micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property; the second conducting property is reverse with respect to the first conducting property. A domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. A CMOS circuit element as well as a portion of the domain are covered with a protecting layer. Front-side isotropic porous Si-etching from the exposed surface of the domain continues until the portion that will carry the micromechanical element becomes underetched. A porous Si sacrificial layer is created which at least partially encloses the portion. Then the exposed surface of the porous Si sacrificial layer is passivated by applying a metallic thin film thereon. Finally, the metallic thin film that covers the exposed surface of the porous Si sacrificial layer is removed and the porous Si sacrificial layer is dissolved thereby forming the micromechanical element.

    Abstract translation: 一种在CMOS技术中与CMOS电路元件集成的单晶硅微机械元件的制造方法，其中在第一导电性质的衬底内形成第二导电性质的畴; 第二导电性能相对于第一导电性而相反。 在用于制造微机械元件的基板内形成单晶Si的区域。 CMOS电路元件以及域的一部分被保护层覆盖。 从畴的暴露表面开始的前侧各向同性多孔Si蚀刻继续进行，直到将携带微机电元件的部分变得不平整。 产生多孔Si牺牲层，其至少部分地包围该部分。 然后通过在其上施加金属薄膜钝化多孔Si牺牲层的暴露表面。 最后，去除覆盖多孔Si牺牲层的暴露表面的金属薄膜，并且多孔Si牺牲层被溶解，从而形成微机械元件。

    CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining
    79.
    发明申请
    CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining 失效
    通过多孔硅微加工制造单晶硅微机械元件的CMOS集成工艺

    公开(公告)号：US20090261387A1

    公开(公告)日：2009-10-22

    申请号：US12314547

    申请日：2008-12-12

    Applicant: Antalne Adam ,  Istvan Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Karolyne Payer ,  Eva Vazsonyi

    Inventor： Antalne Adam ,  Istvan Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Karolyne Payer ,  Eva Vazsonyi

    IPC: H01L29/84 ,  H01L21/56

    CPC classification number: B81C1/00246 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0115 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01L5/228 ,  G06F3/0414 ,  Y10T29/42

    Abstract: The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting property is reverse with respect to the first conducting property, then simultaneously with or immediately after this a domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. After this, a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology and then the circuit element, as well as a portion of said domain for fabricating the micromechanical element that will carry the micromechanical element after its fabrication are covered with a protecting layer. Then by starting a front-side isotropic porous Si-etching from the exposed surface of said domain for fabricating the micromechanical element and by continuing the etching until said portion that will carry the micromechanical element after its fabrication becomes at least in its full extent underetched, a porous Si sacrificial layer is created which at least partially encloses said portion that will carry the micromechanical element after its fabrication. As a next step, the exposed surface of said porous Si sacrificial layer is passivated by applying a metallic thin film thereon and metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the metallic thin film that covers the exposed surface of the porous Si sacrificial layer is removed and the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer.

    Abstract translation: 本发明涉及一种在CMOS技术中制造与CMOS电路元件集成的单晶Si-微机械元件的方法，其中在第一导电性质的衬底内形成第二导电性质的畴，这里第二导电性能与 相对于第一导电性质，然后在该单晶硅的一个或多个之后，形成用于制造微机械元件的基板内。 之后，通过CMOS技术的已知步骤，在衬底内制造CMOS电路元件，然后电路元件以及用于制造将在其制造之后承载微机电元件的微机械元件的一部分用于覆盖微机电元件 保护层。 然后通过从用于制造微机电元件的所述畴的暴露表面开始前侧各向同性多孔Si蚀刻，并且通过继续蚀刻直到在其制造之后将携带微机电元件的部分至少在其全部程度上不被蚀刻， 产生多孔Si牺牲层，其至少部分地包围将在其制造之后承载微机械元件的所述部分。 作为下一步骤，通过在其上施加金属薄膜来钝化所述多孔Si牺牲层的暴露表面，并通过CMOS技术的已知步骤形成电路元件的金属接触片。 最后，去除覆盖多孔Si牺牲层的暴露表面的金属薄膜，并通过化学溶解所述多孔Si牺牲层形成微机械元件。

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