公开(公告)号：EP1263056A3

公开(公告)日：2003-12-03

申请号：EP02077978.1

申请日：1998-03-26

Applicant: Interuniversitair Micro-Elektronica Centrum

Inventor： Fiorini, Paolo ,  Sedky, Sherif ,  Caymax, Matty ,  Baert, Christiaan

IPC: H01L31/18 ,  H01L21/3205

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate by varying the deposition pressure.

公开(公告)号：EP1269526A2

公开(公告)日：2003-01-02

申请号：EP01923913.6

申请日：2001-04-05

Applicant: Interuniversitair Micro-Elektronica Centrum (IMEC)

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

公开(公告)号：EP1245528A1

公开(公告)日：2002-10-02

申请号：EP01610035.6

申请日：2001-03-27

Applicant: Delta Danish Electronics, Light & Acoustics

Inventor： Lisby, Torben ,  Branebjerg, Jens A.

IPC: B81B3/00 ,  B81B7/00 ,  G02B6/42 ,  B01L3/00

CPC classification number: G02B6/4226 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/123 ,  B81C1/0019 ,  B81C2201/017 ,  B81C2201/053 ,  B81C2203/0136 ,  G02B6/3502 ,  G02B6/3584

Abstract: The present invention relates to microsystems having flexibility properties so as to enable folding of the microsystem in any three-dimensional direction. That is, enabling torsional and three-dimensionally non-linearly bending of the microsystem. The present invention provides a flexible three-dimensional microsystem compatible with hostile environments such as encountered within a biological body. In particular, provides a bio-compatible three-dimensional microsystem operational in hostile environments while biological acceptable to biological bodies. The present invention further provides an overall stress stability since forming a unitary structure eliminating stress induced or caused by joining various parts of different materials having different material properties into an assembly.

Abstract translation: 本发明涉及具有柔性的微系统，以便能够在任何三维方向折叠微系统。 也就是说，实现微系统的扭转和三维非线性弯曲。 本发明提供了一种灵活的三维微系统，与诸如在生物体内遇到的敌对环境兼容。 特别地，提供了生物相容性的三维微系统在敌对环境中运行，而生物体可接受生物体。 本发明进一步提供了整体应力稳定性，因为形成一体结构，消除了将具有不同材料特性的不同材料的各种部件接合到组件中而引起或引起的应力。

公开(公告)号：EP0867701A1

公开(公告)日：1998-09-30

申请号：EP97870044.1

申请日：1997-03-28

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW

Inventor： Fiorini, Paolo ,  Sedky, Sherif ,  Caymax, Matty ,  Baert, Christiaan

IPC: G01J5/20 ,  H01L31/18 ,  H01L31/09

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Method of fabrication of an infrared radiation detector, and preferably an infrared sensitive bolometer, comprising the following steps:

forming a sacrificial material layer (11, 12 or 43) on a substrate (10 or 41),
patterning said sacrificial material layer (11, 12 or 43),
depositing an active layer (13 or 42) made of polycrystalline SiGe,
patterning said polycrystalline SiGe layer (13 or 42) in order to form an active area (16 or 47) and supports (15 or 48) of the detector,
performing a high doping of the supports (15 or 48) and a moderate doping of the active area (16 or 47),
depositing a stack of layers in order to form an IR absorber,
removing the sacrificial material layer (11, 12 or 43).

Abstract translation: 红外线辐射探测器的制造方法，优选红外线敏感测辐射热计，其包括以下步骤：在衬底（10或41）上形成牺牲材料层（11,12或43），将所述牺牲材料层（11， 12或43），沉积由多晶SiGe制成的有源层（13或42），图案化所述多晶SiGe层（13或42），以形成有源区（16或47）和支撑体（15或48） 检测器，执行支撑体（15或48）的高掺杂和有源区域（16或47）的适度掺杂，沉积一叠层以形成IR吸收体，去除牺牲材料层（11,12 或43）。

公开(公告)号：EP2739561A1

公开(公告)日：2014-06-11

申请号：EP12759289.7

申请日：2012-08-03

Applicant: Robert Bosch GmbH

Inventor： FEYH, Ando ,  CLASSEN, Johannes

IPC: B81B3/00

CPC classification number: B81B3/0086 ,  B81B3/0008 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176

Abstract: In one embodiment, a method of forming a MEMS device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a silicon based working portion on the sacrificial layer, releasing the silicon based working portion from the sacrificial layer such that the working portion includes at least one exposed outer surface, forming a first layer of silicide forming metal on the at least one exposed outer surface of the silicon based working portion, and forming a first silicide layer with the first layer of silicide forming metal.

公开(公告)号：EP2282969A2

公开(公告)日：2011-02-16

申请号：EP09749684.8

申请日：2009-04-03

Applicant: Robert Bosch GmbH

Inventor： LAERMER, Franz ,  TEEFFELEN, Kathrin ,  LEINENBACH, Christina

IPC: B81C1/00

CPC classification number: G01L9/0042 ,  B81C1/00888 ,  B81C2201/017 ,  H01L21/3065 ,  H01L21/30655 ,  H04R19/005 ,  H04R31/006

Abstract: A method for producing separate micromechanical parts arranged on a silicon substrate (1) encompasses the following steps: a) separation trenches (7) are formed on the substrate by means of a deep anisotropic plasma etching process; b) the zone (9, 12) of the silicon substrate (1) that forms the bottom of separation trenches (6) is irradiated with laser light (11) such that the silicon substrate (1) changes from a crystalline state into an at least partially amorphous state in said zone (9, 12); c) mechanical stresses are induced in the substrate (1). In one embodiment, caverns (2) are etched at the same time as the separation trenches (6) are etched. The etching depths can be controlled using the RIE lag effect.

公开(公告)号：EP2089312A1

公开(公告)日：2009-08-19

申请号：EP07835541.9

申请日：2007-11-09

Applicant: Agency for Science, Technology and Research

Inventor： TRIPATHY, Sudhiranjan ,  SAHMUGANATHAN, Vicknesh

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00484 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/017

Abstract: A micromechanical structure and a method of fabricating a micromechanical structure are provided. The micromechanical structure comprises a silicon (Si) based substrate; a micromechanical element formed directly on the substrate; and an undercut formed underneath a released portion of the micromechanical element; wherein the undercut is in the form of a recess formed in the Si based substrate.

公开(公告)号：EP1269526B1

公开(公告)日：2009-08-19

申请号：EP01923913.6

申请日：2001-04-05

Applicant: IMEC

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

公开(公告)号：EP1377517A1

公开(公告)日：2004-01-07

申请号：EP02719681.5

申请日：2002-03-27

Applicant: Danish Electronics Light & Acoustics (Delta)

Inventor： LISBY, Torben ,  BRANEBJERG, Jens, A.

IPC: B81B3/00 ,  B81B7/00 ,  G02B6/42 ,  B01L3/00

CPC classification number: G02B6/4226 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/123 ,  B81C1/0019 ,  B81C2201/017 ,  B81C2201/053 ,  B81C2203/0136 ,  G02B6/3502 ,  G02B6/3584

Abstract: A method for producing a unitary flexible microelement from a supporting wafer is provided. The unitary flexible microelement defines a supporting body having a solid region and a flexible region consisting of a thin part of the supporting wafer. The method comprises the following steps: defining thickness of the flexible region and growing an upper insulating layer to the upper surface covering the predefined area and growing a lower insulating layer to the lower surface covering the solid region. The method comprises defining a conductive layer on the predefined area of the upper surface, depositing a final insulating layer on the upper surface covering the conductive layer and depositing a metallic protective layer on the upper surface covering the insulating layer. Furthermore, the method comprises etching the lower surface until the etching reaches the thickness of the flexible region, and deepositing a conductive layer on the lower surface to establish a coaxial conductor.

公开(公告)号：EP0867702B1

公开(公告)日：2003-03-12

申请号：EP98870058.9

申请日：1998-03-26

Applicant: INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW

Inventor： Fiorini, Paolo ,  Sedky, Sherif ,  Caymax, Matty ,  Baert, Christiaan

IPC: G01J5/20 ,  H01L31/18 ,  H01L31/09

CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521