公开(公告)号：EP0713241B1

公开(公告)日：2001-09-19

申请号：EP96100917.2

申请日：1988-02-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Okunuki,Masahiko ,  Suzuki,Akira ,  Shimoda,Isamu ,  Kaneko,Tetsuya ,  Tsukamoto,Takeo ,  Takeda,Toshihiko ,  Yonehara,Takao ,  Ichikawa,Takeshi

IPC: H01J31/12 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446

公开(公告)号：EP1065692A2

公开(公告)日：2001-01-03

申请号：EP00112734.9

申请日：2000-06-16

Applicant: Codixx AG

Inventor：

IPC: H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: Flächige Elektronen-Feldemissionsquelle, insbesondere für den Einsatz in flachen Bildschirmen, wobei selbige eine aktive Schicht reduzierter Dichte aufweist, deren Basismaterial ein hochschmelzendes Metall mit einem Schmelzpunkt oberhalb 1800 K ist und deren Dichte im Vergleich zum kristallinen Volumenmaterial des hochschmelzenden Metalls um mindestens 20 % reduziert ist, oder selbige eine aktive Schicht reduzierter Dichte aufweist, deren Basismaterial ein Gemisch verschiedener Metalle ist, von denen mindestens eines ein hochschmelzendes Metall mit einem Schmelzpunkt oberhalb 1800 K ist, und die Dichte der aktiven Schicht im Vergleich zum kompakten Gemisch der kristallinen Volumenmaterialien gleicher Zusammensetzung wie das Basismaterial um mindestens 20 % reduziert ist.

Abstract translation: 基材是熔点高于1800K的金属。与相应的结晶固体金属相比，其密度降低了20％以上。 在另一个相似的变体中，可以包括其它金属。 包括制造方法的独立权利要求。 使用一种或多种物理气相沉积方法沉积密度降低的活性层。 通过足够低的动能和热量的引入，减少密度增长，形成纳米孔和纳米柱。

公开(公告)号：EP0861498B1

公开(公告)日：1999-10-27

申请号：EP96941343.4

申请日：1996-11-13

Applicant: E.I. DU PONT DE NEMOURS AND COMPANY

Inventor： BLANCHET-FINCHER, Graciela, Beatriz ,  HOLSTEIN, William, Leo ,  SHAH, Syed, Ismat, Ullah ,  SUBRAMONEY, Shekhar

IPC: H01J1/30

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: Annealed carbon soot is useful as an electron field emitter. Field emitting cathodes made up of annealed carbon soot attached to the surface of a substrate are also provided. The field emitters and field emitter cathodes are useful in vacuum electronic devices, flat panel computer and television displays, emission gate amplifiers, klystrons and lighting devices.

公开(公告)号：EP0938739A1

公开(公告)日：1999-09-01

申请号：EP97949390.0

申请日：1997-11-12

Applicant: E.I. DU PONT DE NEMOURS AND COMPANY

Inventor： BLANCHET-FINCHER, Graciela, Beatriz ,  HOLSTEIN, William, Leo ,  SHAH, Syed, Ismat, Ullah

IPC: H01J1 ,  H01J9

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

Abstract: Carbon cone and carbon whisker field emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes and display panels utilizing said cathodes. The carbon cone and carbon whisker field emitters can be formed by ion beam bombardment (e.g., ion beam etching) of carbon materials (e.g., bulk carbon, carbon films or carbon fibers).

公开(公告)号：EP0713241A2

公开(公告)日：1996-05-22

申请号：EP96100917.2

申请日：1988-02-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Okunuki,Masahiko ,  Suzuki,Akira ,  Shimoda,Isamu ,  Kaneko,Tetsuya ,  Tsukamoto,Takeo ,  Takeda,Toshihiko ,  Yonehara,Takao ,  Ichikawa,Takeshi

IPC: H01J31/12

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446

Abstract: A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.

Abstract translation: 多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的圆锥形部分的多个电极，在沉积表面上形成有分别以锥形部分为中心的开口的绝缘层，以及 导电电极，其一部分形成在至少锥形部分附近，导电电极形成在绝缘层上。

公开(公告)号：EP1850362B1

公开(公告)日：2010-05-26

申请号：EP07106787.0

申请日：2007-04-24

Applicant: Samsung SDI Co., Ltd.

Inventor： Kim, Joo-Young

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  Y10T428/31663

公开(公告)号：EP2092542B1

公开(公告)日：2010-01-13

申请号：EP07846340.3

申请日：2007-11-15

Applicant: Keesmann, Till

Inventor： Keesmann, Till

IPC: H01J1/304 ,  H01J29/04

CPC classification number: H01J1/3044 ,  H01J29/04 ,  H01J2201/30446

公开(公告)号：EP1926121A2

公开(公告)日：2008-05-28

申请号：EP07121604.8

申请日：2007-11-27

Applicant: Samsung SDI Co., Ltd.

Inventor： Cho, Sung-Hee

IPC: H01J31/12

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J29/04 ,  H01J2201/30446

Abstract: A carbon-based material for electron emission sources, electron emission sources (150) containing the carbon-based material, an electron emission device including the electron emission sources (150), and a method of preparing the electron emission sources are provided. The carbon-based material has at least one characteristic selected from the group consisting of a ratio of h2 to h1 (h2/h1) 1.2, where h2 denotes the relative intensity of a second peak which is a peak in a Raman shift range of 1350±20 cm - 1, and h1 denotes the relative intensity of a first peak which is a peak in a Raman shift range of 1580±20 cm -1 in the Raman spectrum obtained by the radiation of a laser beam having a wavelength of 488±10 nm, 514.5±10 nm, 633±10 nm or 785±10 nm, FWHM2 denotes the full width at half maximum of the second peak, and FWHM1 denotes the full width at half maximum of the first peak. The electron emission sources (150) containing the carbon-based material have long lifespan and a high current density.

Abstract translation: 提供了一种用于电子发射源的碳基材料，包含碳基材料的电子发射源（150），包括电子发射源（150）的电子发射装置以及制备电子发射源的方法。 碳基材料具有选自h2〜h1（h2 / h1）<1.3的比例和FWHM2与FWHM1的比例（FWHM2 / FWHM1）> 1.2的至少一种特性，其中h2表示相对 在拉曼位移范围为1350±20cm -1的第二峰的强度，h1表示在1580±20cm -1的拉曼位移范围内的峰的相对强度 通过辐射波长为488±10nm，514.5±10nm，633±10nm或785±10nm的激光束获得的拉曼光谱，FWHM2表示第二峰的半峰全宽，FWHM1表示 第一个峰值的半峰全宽。 含有碳基材料的电子发射源（150）寿命长，电流密度高。

公开(公告)号：EP1850362A3

公开(公告)日：2007-12-05

申请号：EP07106787.0

申请日：2007-04-24

Applicant: Samsung SDI Co., Ltd.

Inventor： Kim, Joo-Young

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  Y10T428/31663

Abstract: An electron emission source includes a carbon-based material and a resultant material formed by curing and heat treating at least one silicon-based material represented by formula (1), (2), and/or (3) below:



where R 1 through R 22 are each independently a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 1 -C 20 alkoxy group, a substituted or unsubstituted C 1 -C 20 alkenyl group, a halogen atom, a hydroxyl group or a mercapto group, and m and n are each integers from 0 to 1,000. An electron emission device and an electron emission display device include the electron emission source. A composition for forming electron emission sources includes the carbon-based material and the silicon-based material. A method of forming the electron emission source includes applying the composition to a substrate; and heat treating the applied composition. The adhesion between the electron emission source including the cured and heat treated resultant material of the silicon-based material and a substrate is excellent, and thus the reliability of the electron emission device including the cured and heat treated resultant material of the silicon-based material can be enhanced.

公开(公告)号：EP1670015A4

公开(公告)日：2007-02-21

申请号：EP04772724

申请日：2004-08-27

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KOMATSU SHOJIRO ,  MORIYOSHI YUSUKE ,  SHIMIZU YOSHIKI ,  OKADA KATSUYUKI

IPC: C01B21/064 ,  H01J1/304 ,  C23C16/34 ,  C23C16/38 ,  C23C16/48 ,  H01J9/02

CPC classification number: H01J1/304 ,  C23C16/342 ,  C23C16/482 ,  H01J9/025 ,  H01J2201/30446 ,  Y10T428/24355

Abstract: A method for preparing an sp bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300°C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof.