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公开(公告)号:US20170256683A1
公开(公告)日:2017-09-07
申请号:US15599068
申请日:2017-05-18
Applicant: EPISTAR CORPORATION
Inventor: Chao-Hsing CHEN
IPC: H01L33/58
CPC classification number: H01L33/486 , H01L33/48 , H01L33/483 , H01L33/501 , H01L33/505 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/12044 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.
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公开(公告)号:US20170207368A1
公开(公告)日:2017-07-20
申请号:US15474476
申请日:2017-03-30
Applicant: EPISTAR CORPORATION
Inventor: Hong-Che CHEN , Chien-Fu SHEN , Chao-Hsing CHEN , Yu-Chen YANG , Jia-Kuen WANG , Chih-Nan LIN
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
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公开(公告)号:US20170162751A1
公开(公告)日:2017-06-08
申请号:US15437438
申请日:2017-02-20
Applicant: EPISTAR CORPORATION
Inventor: Jia-Kuen WANG , Chao-Hsing CHEN
IPC: H01L33/38 , H01L33/44 , H01L33/62 , H01L33/64 , H01L33/58 , H01L33/56 , H01L33/60 , H01L33/40 , H01L25/075
CPC classification number: H01L33/382 , F21K9/232 , F21V23/06 , F21Y2115/10 , H01L25/0753 , H01L33/0062 , H01L33/007 , H01L33/0075 , H01L33/0083 , H01L33/0095 , H01L33/36 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 μm.
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公开(公告)号:US20170018684A1
公开(公告)日:2017-01-19
申请号:US15279149
申请日:2016-09-28
Applicant: EPISTAR CORPORATION
Inventor: Schang-Jing HON , Chao-Hsing CHEN , Tsun-Kai KO , Chien-Fu SHEN , Jia-Kuen WANG , Hung-Che CHEN
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
Abstract translation: 发光元件包括基板; 在所述基板上的发光半导体堆叠,所述发光半导体堆叠包括第一半导体层,所述第一半导体层上的第二半导体层以及所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 形成在所述发光半导体堆叠上的反射层; 形成在所述发光半导体堆叠上的保护层; 以及形成在所述发光半导体堆叠上的导电接触层,其中所述衬底上方的每个层包括倾斜于所述衬底的顶表面的侧表面。
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公开(公告)号:US20170012167A1
公开(公告)日:2017-01-12
申请号:US15273439
申请日:2016-09-22
Applicant: EPISTAR CORPORATION
Inventor: Chao-Hsing CHEN , Yu-Chen YANG , Li-Ping JOU , Hui-Chun YEH , Yi-Wen KU
CPC classification number: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
Abstract translation: 发光装置包括半导体层序列,其包括具有第一导电性的第一半导体层,具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 形成在半导体层序列中的多个斜面沟槽; 分别形成在所述多个倾斜沟槽中的多个突出结构; 形成在所述第二半导体层上的电介质层和所述多个斜面沟槽的内侧壁; 插入在所述半导体层序列和所述电介质层之间的反射层; 以及沿着所述多个倾斜沟槽的内侧壁形成的金属层,其中所述电介质层,所述反射层和所述金属层重叠,所述多个突出结构和所述反射层不重叠。
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公开(公告)号:US20160172560A1
公开(公告)日:2016-06-16
申请号:US14948733
申请日:2015-11-23
Applicant: EPISTAR CORPORATION
Inventor: Chao-Hsing CHEN , Tsung-Hsun CHIANG , Chien-Chih LIAO , Wen-Hung CHUANG , Min-Yen TSAI , Bo-Jiun HU
Abstract: A light-emitting element includes: a semiconductor light-emitting stack including a first semiconductor layer with a first conductivity, an active layer, and a second semiconductor layer with a second conductivity; a first conductive layer disposed on the semiconductor light-emitting stack and electrically connecting the second semiconductor layer; a first insulating layer on the first conductive layer; a second conductive layer disposed on the first insulating layer and electrically connecting the first semiconductor layer; a second insulating layer on the second conductive layer; a first pad and a second pad on the second conductive layer; and a cushion part disposed between the first pad and the second pad.
Abstract translation: 发光元件包括:包括具有第一导电性的第一半导体层,有源层和具有第二导电性的第二半导体层的半导体发光堆叠; 设置在所述半导体发光堆叠上并电连接所述第二半导体层的第一导电层; 在所述第一导电层上的第一绝缘层; 第二导电层,设置在所述第一绝缘层上并电连接所述第一半导体层; 在所述第二导电层上的第二绝缘层; 在第二导电层上的第一焊盘和第二焊盘; 以及设置在第一垫和第二垫之间的缓冲部。
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公开(公告)号:US20160049442A1
公开(公告)日:2016-02-18
申请号:US14924264
申请日:2015-10-27
Applicant: EPISTAR CORPORATION
Inventor: Chien-Fu SHEN , Chao-Hsing CHEN , Tsun-Kai KO , Schang-Jing HON , Sheng-Jie HSU , De-Shan KUO , Hsin-Ying WANG , Chiu-Lin YAO , Chien-Fu HUANG , Hsin-Mao LIU , Chien-Kai CHUN
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit; and an electrical connection, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion is configured to cover the trench, and the joining portion is configured to cover first unit and the second unit.
Abstract translation: 1.一种发光结构,包括基板; 分别形成在所述基板上的第一单元和第二单元; 第一单元和第二单元之间的沟槽; 以及电连接,电连接所述第一单元和所述第二单元,并且包括桥接部分和从所述桥接部分延伸的接合部分,其中所述桥接部分比所述接合部分宽,并且所述桥接部分构造成覆盖所述沟槽, 并且所述接合部被构造成覆盖所述第一单元和所述第二单元。
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88.
公开(公告)号:US20150194586A1
公开(公告)日:2015-07-09
申请号:US14663544
申请日:2015-03-20
Applicant: Epistar Corporation
Inventor: Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Han-Min WU , Ye-Ming HSU , Chien-Fu HUANG , Chao-Hsing CHEN , Chiu-Lin YAO , Hsin-Mao LIU , Chien-Kai CHUNG
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.
Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件,其中所述第一发光元件包括在所述支撑基板上的透明层,所述透明层上的第一发光层叠层,以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线,并且电连接所述电极和所述接触部分之一。
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89.
公开(公告)号:US20140077238A1
公开(公告)日:2014-03-20
申请号:US14089591
申请日:2013-11-25
Applicant: Epistar Corporation
Inventor: Chien-Fu HUANG , Chao-Hsing CHEN , Chiu-Lin YAO , Hsin-Mao LIU , Chien-Kai CHUNG
IPC: H01L27/15
CPC classification number: H01L27/15 , H01L27/153 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.
Abstract translation: 发光装置包括:载体; 形成在所述载体上的发光结构,其中所述发光结构具有面向所述载体的第一表面,与所述第一表面相对的第二表面,以及在所述第一表面和所述第二表面之间的有源层; 从所述第一表面延伸并穿过所述有源层的多个第一沟槽,以限定多个发光单元; 以及从所述第二表面延伸并穿过所述多个发光单元中的每一个的有源层的多个第二沟槽。
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