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    APPARATUS FOR FABRICATING SEMICONDUCTOR STRUCTURES
    81.
    发明申请
    APPARATUS FOR FABRICATING SEMICONDUCTOR STRUCTURES 审中-公开
    制造半导体结构的装置

    公开(公告)号：WO03001573A3

    公开(公告)日：2003-03-13

    申请号：PCT/US0150329

    申请日：2001-12-20

    Applicant: MOTOROLA INC

    Inventor： DROOPAD RAVINDRANATH ,  MASSIE SCOTT T

    IPC: C30B23/02 ,  H01L21/20

    CPC classification number: C30B23/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

    Abstract: An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber (102) and a plurality of first material sources (106-110) positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer (204) on a substrate (202). The plurality of first material sources includes an oxygen source (116). At least one second material source (112-114) is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer (206) overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism (132) configured to adjust the partial pressure of oxygen in the chamber.

    Abstract translation: 提供一种用于形成半导体结构的装置。 该装置包括腔室（102）和至少部分地位于腔室内的多个第一材料源（106-110）。 多个第一材料源被配置为提供用于在衬底（202）上形成单晶容纳缓冲层（204）的材料。 多个第一材料源包括氧源（116）。 至少一个第二材料源（112-114）还至少部分地位于室内，并且被配置为提供用于形成覆盖单晶容纳缓冲层的单晶氧掺杂材料层（206）的材料。 该装置还包括氧气调节机构（132），其被配置为调节室中氧的分压。

    SEMICONDUCTOR STRUCTURES UTILIZING BINARY METAL OXIDE LAYERS
    82.
    发明申请
    SEMICONDUCTOR STRUCTURES UTILIZING BINARY METAL OXIDE LAYERS 审中-公开
    使用二元金属氧化物层的半导体结构

    公开(公告)号：WO02089188A3

    公开(公告)日：2003-01-16

    申请号：PCT/US0205136

    申请日：2002-02-21

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  DROOPAD RAVINDRANATH ,  OOMS WILLIAM J

    IPC: C30B23/02 ,  C30B25/18 ,  H01L21/316 ,  H01L21/00 ,  C30B29/16 ,  C30B29/22

    CPC classification number: H01L21/31604 ,  C30B23/02 ,  C30B25/18 ,  C30B29/16

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a complaint substrate includes first growing a monocrystalline binary metal oxide material layer (14) on a substrate (12). The binary metal oxide material layer (14) is lattice matched to both the underlying substrate (12) and the overlying monocrystalline material layer (16).

    Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现形成投诉基板的一种方式包括首先在基板（12）上生长单晶二元金属氧化物材料层（14）。 二元金属氧化物材料层（14）与下面的衬底（12）和上层的单晶材料层（16）晶格匹配。

    ALKALI EARTH METAL OXIDE GATE INSULATORS
    83.
    发明申请
    ALKALI EARTH METAL OXIDE GATE INSULATORS 审中-公开
    阿尔卡利地球金属氧化物绝缘子

    公开(公告)号：WO0209157A3

    公开(公告)日：2002-06-20

    申请号：PCT/US0122652

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  HILT LYNDEE

    IPC: C30B25/18 ,  H01L21/20 ,  H01L21/28 ,  H01L21/316 ,  H01L29/20 ,  H01L29/78 ,  H01L29/51 ,  C30B23/02

    CPC classification number: H01L29/78 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/28264 ,  H01L21/31604 ,  H01L29/20

    Abstract: High quality epitaxial layers of stable oxides can be grown overlying compound semiconductor material substrates. The compound semiconductor substrate (101) may be terminated with an atomic layer of gallium, for example (for a gallium arsenide substrate), forming a terminating layer (102). The oxide layer (105) is a layer of monocrystalline alkali earth oxide spaced apart from the compound semiconductor wafer by an oxide template layer (103) overlying the compound semiconductor substrate via the terminating layer. The oxide template layer (103) dissipates strain and permits the growth of a high quality monocrystalline oxide layer. Any lattice mismatch between the monocrystalline oxide layer and the underlying compound semiconductor substrate is decreased by the oxide template layer. The monocrystalline oxide layers can be used as gate dielectric in insulated gate field effect transistors.

    Abstract translation: 稳定氧化物的高质量外延层可以生长在化合物半导体材料基底上。 化合物半导体衬底（101）可以用例如（对于砷化镓衬底）的镓的原子层来终止，形成终止层（102）。 氧化物层（105）是通过覆盖化合物半导体衬底的氧化物模板层（103）经由终止层与化合物半导体晶片间隔开的单晶碱土氧化物层。 氧化物模板层（103）耗散应变并允许高质量单晶氧化物层的生长。 单晶氧化物层和下面的化合物半导体衬底之间的任何晶格失配通过氧化物模板层而降低。 单晶氧化物层可用作绝缘栅场效应晶体管中的栅极电介质。

    FIELD EFFECT TRANSISTOR
    84.
    发明申请
    FIELD EFFECT TRANSISTOR 审中-公开
    场效应晶体管

    公开(公告)号：WO0209186A3

    公开(公告)日：2002-05-02

    申请号：PCT/US0122677

    申请日：2001-07-19

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT ,  PRENDERGAST JAMES E ,  RAMDANI JAMAL ,  MS WILLIAM JAY ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L21/338 ,  H01L27/06

    CPC classification number: H01L29/66848 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02521 ,  H01L29/66856

    Abstract: High quality epitaxial layers of compound semiconductor materials (26) can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

    Abstract translation: 通过首先在硅晶片上生长容纳缓冲层（24），可以将复合半导体材料（26）的高质量外延层生长成覆盖在大的硅晶片（22）上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

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