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    1.
    发明专利
    未知

    公开(公告)号：BR0113593A

    公开(公告)日：2004-06-08

    申请号：BR0113593

    申请日：2001-08-28

    Applicant: MOTOROLA INC

    Inventor： KORIPELLA CHOWDARY RAMESH ,  DYER CHRISTOPHER K ,  GERVASIO DOMINIC FRANCIS ,  ROGERS STEPHEN P ,  WILCOX DAVID ,  OOMS WILLIAM JAY

    IPC: B01B1/00 ,  B01J19/00 ,  B01J19/24 ,  C01B3/38 ,  H01M8/04 ,  H01M8/06 ,  H01M8/10 ,  H01M8/00

    Abstract: A fuel processor and integrated fuel cell including a monolithic three-dimensional multilayer ceramic carrier structure defining a fuel reformer and including an integrated fuel cell stack. The reformer includes a vaporization zone, a reaction zone including a catalyst, and an integrated heater. The integrated heater is thermally coupled to the reaction zone. The fuel processor further includes an inlet channel for liquid fuel and an outlet channel for hydrogen enriched gas. The fuel processor is formed utilizing multi-layer ceramic technology in which thin ceramic layers are assembled then sintered to provide miniature dimensions in which the encapsulated catalyst converts or reforms inlet fuel into a hydrogen enriched gas.

    Direct methanol fuel cell system
    3.
    发明专利
    Direct methanol fuel cell system 未知

    公开(公告)号：AU8059601A

    公开(公告)日：2002-01-30

    申请号：AU8059601

    申请日：2001-07-17

    Applicant: MOTOROLA INC

    Inventor： KORIPELLA CHOWDARY RAMESH ,  OOMS WILLIAM JAY ,  WILCOX DAVID L ,  BOSTAPH JOSEPH W

    IPC: H01M8/00 ,  H01M8/02 ,  H01M8/04 ,  H01M8/10 ,  H01M8/24

    Abstract: A fuel cell system and method of forming the fuel cell system including a base portion, formed of a singular body, and having a major surface. At least one fuel cell membrane electrode assembly is formed on the major surface of the base portion. A fluid supply channel including a mixing chamber is defined in the base portion and communicating with the fuel cell membrane electrode assembly for supplying a fuel-bearing fluid to the membrane electrode assembly. An exhaust channel including a water recovery and recirculation system is defined in the base portion and communicating with the membrane electrode assembly. The membrane electrode assembly and the cooperating fluid supply channel and cooperating exhaust channel forming a single fuel cell assembly.

    4.
    发明专利
    未知

    公开(公告)号：DE60139713D1

    公开(公告)日：2009-10-08

    申请号：DE60139713

    申请日：2001-08-28

    Applicant: MOTOROLA INC

    Inventor： KORIPELLA CHOWDARY RAMESH ,  DYER CHRISTOPHER K ,  GERVASIO DOMINIC FRANCIS ,  ROGERS STEPHEN P ,  WILCOX DAVID ,  OOMS WILLIAM JAY

    IPC: H01M8/06 ,  B01B1/00 ,  B01J19/00 ,  B01J19/24 ,  C01B3/38 ,  H01M8/04 ,  H01M8/10

    Abstract: A fuel processor and integrated fuel cell including a monolithic three-dimensional multilayer ceramic carrier structure defining a fuel reformer and including an integrated fuel cell stack. The reformer includes a vaporization zone, a reaction zone including a catalyst, and an integrated heater. The integrated heater is thermally coupled to the reaction zone. The fuel processor further includes an inlet channel for liquid fuel and an outlet channel for hydrogen enriched gas. The fuel processor is formed utilizing multi-layer ceramic technology in which thin ceramic layers are assembled then sintered to provide miniature dimensions in which the encapsulated catalyst converts or reforms inlet fuel into a hydrogen enriched gas.

    Electro-optic structure and process for fabricating same
    5.
    发明专利
    Electro-optic structure and process for fabricating same 未知

    公开(公告)号：AU8714201A

    公开(公告)日：2002-04-08

    申请号：AU8714201

    申请日：2001-09-07

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  HILT LYNDEE ,  DROOPAD RAVINDRANATH ,  OOMS WILLIAM JAY

    IPC: G02B6/12 ,  G02B6/13 ,  G02F1/03 ,  G02F1/035 ,  H01L21/20 ,  G02B6/00

    Abstract: High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME
    10.
    发明申请
    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME 审中-公开
    一体化辐射发射系统及其制造方法

    公开(公告)号：WO0209148A3

    公开(公告)日：2003-07-31

    申请号：PCT/US0122543

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： FOLEY BARBARA M ,  OOMS WILLIAM JAY ,  PRENDERGAST JAMES E ,  EISENBEISER KURT ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L33/00 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32 ,  G02B6/12

    CPC classification number: H01L33/30 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L33/0066 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/183 ,  H01S5/3201

    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radiation systems, including radiation sources such as light emitting diode or lasers and wave guides may be formed in the high quality epitaxial compound semiconductor material and above the oxide layers.

    Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 可以在高质量的外延化合物半导体材料中和氧化物层之上形成辐射系统，包括诸如发光二极管或激光器和波导的辐射源。

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