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    Multijunction solar cell
    1.
    发明专利
    Multijunction solar cell 未知

    公开(公告)号：AU2002320029A1

    公开(公告)日：2003-03-03

    申请号：AU2002320029

    申请日：2002-05-06

    Applicant: MOTOROLA INC

    Inventor： OOMS WILLIAM J ,  FREEBURG THOMAS ,  PRENDERGAST JAMES E ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  EISENBEISER KURT W

    IPC: H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/068

    Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.

    FIELD EFFECT TRANSISTOR
    5.
    发明申请
    FIELD EFFECT TRANSISTOR 审中-公开
    场效应晶体管

    公开(公告)号：WO0209186A3

    公开(公告)日：2002-05-02

    申请号：PCT/US0122677

    申请日：2001-07-19

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT ,  PRENDERGAST JAMES E ,  RAMDANI JAMAL ,  MS WILLIAM JAY ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L21/338 ,  H01L27/06

    CPC classification number: H01L29/66848 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02521 ,  H01L29/66856

    Abstract: High quality epitaxial layers of compound semiconductor materials (26) can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

    Abstract translation: 通过首先在硅晶片上生长容纳缓冲层（24），可以将复合半导体材料（26）的高质量外延层生长成覆盖在大的硅晶片（22）上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

    COMPLEMENTARY III-V STRUCTURES AND DEVICES
    6.
    发明申请
    COMPLEMENTARY III-V STRUCTURES AND DEVICES 审中-公开
    补充III-V结构和器件

    公开(公告)号：WO03010805A3

    公开(公告)日：2003-09-18

    申请号：PCT/US0214736

    申请日：2002-05-08

    Applicant: MOTOROLA INC

    Inventor： OOMS WILLIAM J ,  PRENDERGAST JAMES E ,  GILLIG STEVEN F

    IPC: H01L21/20 ,  H01L21/8258 ,  H01L27/06 ,  H01L21/8238

    CPC classification number: H01L27/0605 ,  H01L21/02381 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/8258

    Abstract: High quality epitaxial layers of monocrystalline materials suitable for forming complimentary III-V field effect transistors (340) can be grown overlying monocrystalline substrates (350) such as large silicon wafers by forming a compliant substrate (346) for growing the monocrystalline layers and a buffer structure overlying the compliant substrate (346). One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (354) on a silicon wafer (350). The accommodating buffer layer (354) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (352).

    Abstract translation: 通过形成用于生长单晶层的缓冲衬底（346）和缓冲层（例如缓冲层），可以生长适合于形成互补III-V场效应晶体管（340）的高质量单晶材料外延层，覆盖单晶衬底（350） 覆盖柔性衬底（346）的结构。 实现形成柔性衬底的一种方式包括首先在硅晶片（350）上生长适应缓冲层（354）。 调节缓冲层（354）是由氧化硅（352）的非晶界面层与硅晶片隔开的单晶氧化物层。

    MULTIJUNCTION SOLAR CELL
    7.
    发明申请
    MULTIJUNCTION SOLAR CELL 审中-公开
    多功能太阳能电池

    公开(公告)号：WO03009395A3

    公开(公告)日：2003-09-18

    申请号：PCT/US0214366

    申请日：2002-05-06

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT W ,  FREEBURG THOMAS ,  PRENDERGAST JAMES E ,  OOMS WILLIAM J ,  DROOPAD RAVINDRANATH ,  RAMDANI JAMAL

    IPC: H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/068

    CPC classification number: H01L31/0693 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

    Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions (302, 304).

    Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池结的单片集成（302,304）。

    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME
    8.
    发明申请
    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME 审中-公开
    一体化辐射发射系统及其制造方法

    公开(公告)号：WO0209148A3

    公开(公告)日：2003-07-31

    申请号：PCT/US0122543

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： FOLEY BARBARA M ,  OOMS WILLIAM JAY ,  PRENDERGAST JAMES E ,  EISENBEISER KURT ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L33/00 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32 ,  G02B6/12

    CPC classification number: H01L33/30 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L33/0066 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/183 ,  H01S5/3201

    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radiation systems, including radiation sources such as light emitting diode or lasers and wave guides may be formed in the high quality epitaxial compound semiconductor material and above the oxide layers.

    Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 可以在高质量的外延化合物半导体材料中和氧化物层之上形成辐射系统，包括诸如发光二极管或激光器和波导的辐射源。

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