公开(公告)号：KR1020030004378A

公开(公告)日：2003-01-14

申请号：KR1020027014535

申请日：2001-04-17

Applicant: 코닝 인코포레이티드

Inventor： 브라운,존,티. ,  버크,제랄드,이. ,  챠콘,리사,씨. ,  도우스,스티븐,비. ,  앨리슨,아담,제이. ,  하우토프,다니엘,더블유. ,  루피노,안쏘니,피. ,  스리칸트,브이. ,  탄돈,푸쉬카 ,  텐넨트,크리스틴,엘. ,  테렐,제임스,피.,주니어. ,  홀렌요셉,엠.

IPC: C03B37/018

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B37/01202 ,  C03B37/01406 ,  C03B37/01413 ,  C03B37/0142 ,  C03B37/0146 ,  C03B2201/12 ,  C03B2203/22 ,  C03B2207/02 ,  C03B2207/06 ,  C03B2207/08 ,  C03B2207/14 ,  C03B2207/20 ,  C03B2207/30 ,  C03B2207/38 ,  C03B2207/40 ,  C03B2207/42 ,  C03B2207/46 ,  C03B2207/54 ,  C03B2207/70 ,  C03B2207/81 ,  C03C3/06 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  F23D14/22 ,  F23D14/32 ,  G03F1/60 ,  G03F7/70958

Abstract: 본 발명은 대기로부터 반응 제품으로서 물을 제거하고, 이송 과정에서 물을 제거하거나, 또는 그들의 조합으로 무수 용융 실리카 프리폼 또는 글라스를 제조하기 위한 장치 및 방법에 관한 것이다. 무수 수트, 프리폼 또는 글라스는 적층과정에서 카본 모노사이드와 같이 무수소 연료를 이용하여 얻게 된다. 선택적으로, 수트 형성 버너는 무수소 연료로 작동될 수 있도록 하는 변수를 갖는다. 또한, 물의 생성을 최소화시키는 엔드 버너가 게시되어 있다. 이러한 무수법은 플루오린 도프 수트를 효과적으로 적층하는데 있어서 유용하다. 도판트의 이동을 최소화하기 위한 유리 차단층법과 장치도 개시되어 있으며, 특히 차단층을 형성하기 위한 플루오린 및 레이저 및 유도 방법과 장치도 개시되어 있다. 클로로플루오로실란과 같은 클로린, 플루오린 및 실리카 전구물질이 사용될 수 있다. 일실시예는 무수 연료에 대한 연소촉진 첨가제에 관한 것이다. 상기 방법과 장치는 포토마스크 기판 및 광섬유 프리폼의 제조에 유용하다.

公开(公告)号：EP2322490B1

公开(公告)日：2018-06-13

申请号：EP10251903.0

申请日：2010-11-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Maida, Shigeru ,  Otsuka, Hisatoshi

IPC: C03C3/06 ,  C03C4/00 ,  C03B19/14

CPC classification number: G03F1/22 ,  C03B19/1423 ,  C03B2201/20 ,  C03B2201/42 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/20 ,  C03C2201/42 ,  Y02P40/57

Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.

公开(公告)号：EP2518030A1

公开(公告)日：2012-10-31

申请号：EP10834516.6

申请日：2010-11-24

Applicant: Asahi Glass Company, Limited

Inventor： KOIKE Akio ,  MITSUMORI Takahiro ,  OGAWA Tomonori

IPC: C03C3/06 ,  C03B20/00 ,  C03C3/089 ,  C03C3/097 ,  G03F1/16 ,  H01L21/027

CPC classification number: C03C3/06 ,  C03B19/1453 ,  C03B2201/10 ,  C03B2201/12 ,  C03B2201/23 ,  C03B2201/28 ,  C03B2201/42 ,  C03B2201/50 ,  C03C2201/10 ,  C03C2201/20 ,  C03C2201/28 ,  C03C2201/42

Abstract: The present invention relates to a TiO 2 -containing silica glass containing TiO 2 in an amount of from 5 to 10 mass% and at least one of B 2 O 3 , P 2 O 5 and S in an amount of from 50 ppb by mass to 5 mass% in terms of the total content.

Abstract translation: 本发明涉及一种含TiO 2的二氧化硅玻璃，其含有5〜10质量％的TiO 2和以B 2 O 5，P 2 O 5和S中的至少一种为基准计为50质量ppb〜5质量％ 总内容。

公开(公告)号：EP2385024A1

公开(公告)日：2011-11-09

申请号：EP11155919.1

申请日：2011-02-25

Applicant: Corning Incorporated

Inventor： Duran, Carlos ,  Hrdina, Kenneth Edward ,  Maxon, John Edward

IPC: C03B19/14 ,  C03C3/076 ,  C03C3/06 ,  G03F1/00

CPC classification number: C03B19/1407 ,  C03B19/1453 ,  C03B2201/23 ,  C03B2201/42 ,  C03C3/06 ,  C03C3/076 ,  C03C2201/20

Abstract: Field
This disclosure is directed to tailoring and improving the expansivity of low thermal expansion silica-titania glass through changes in the [OH] content and fictive temperature of the glasses. The [OH] concentration in the glass can be in the range of 600-2500ppm. The fictive temperature, T F is less than 900°C.

Abstract translation: 领域本公开涉及通过玻璃的[OH]含量和假想温度的变化来定制和改善低热膨胀二氧化硅 - 二氧化钛玻璃的膨胀性。 玻璃中的[OH]浓度可以在600-2500ppm的范围内。 假想温度T F小于900°C。

公开(公告)号：EP2322490A1

公开(公告)日：2011-05-18

申请号：EP10251903.0

申请日：2010-11-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Maida, Shigeru ,  Otsuka, Hisatoshi

IPC: C03C3/06 ,  C03C4/00 ,  C03B19/14

CPC classification number: G03F1/22 ,  C03B19/1423 ,  C03B2201/20 ,  C03B2201/42 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/20 ,  C03C2201/42 ,  Y02P40/57

Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.

Abstract translation: 提供二氧化钛和硫共掺杂的石英玻璃构件。 由于二氧化钛和硫的共掺杂，石英玻璃构件在宽温度范围内在一定温度下经历零膨胀和低热膨胀，因此适用于商业EUV光刻工具。 还提供了用于EUV光刻的制造方法和光学构件。

公开(公告)号：EP1917702A2

公开(公告)日：2008-05-07

申请号：EP06808243.7

申请日：2006-08-17

Applicant: Alcatel Lucent

Inventor： BLANCHANDIN, Stéphanie ,  COLLET, Christine ,  PASTOURET, Alain ,  DE MONREDON, Sophie, c/o Université Pierre et Marie CURIE ,  JOLIVET, Jean-Pierre ,  CHANEAC, Corinne

IPC: H01S3/067

CPC classification number: C09K11/7701 ,  C03C3/06 ,  C03C4/0071 ,  C03C4/10 ,  C03C13/045 ,  C03C14/004 ,  C03C14/006 ,  C03C2201/20 ,  C03C2201/30 ,  C03C2201/3476 ,  H01S3/06716 ,  H01S3/06754 ,  H01S3/169

Abstract: The invention relates to an optical fibre comprising a gain medium which is equipped with: a core (22) which is formed from a transparent material and nanoparticles (24) comprising a doping element and at least one element for enhancing the use of said doping element; and an outer sheath (26) which surrounds the core. The invention is characterised in that the doping element is erbium (Er) and in that the enhancing element is selected from among antimony (Sb), bismuth (Bi) and a combination of antimony (Sb) and bismuth (Bi). According to the invention, one such fibre is characterised in that the size of the nanoparticles is variable and included between 1 and 500 nanometers and preferably greater than 20 nm.

公开(公告)号：EP1373151A1

公开(公告)日：2004-01-02

申请号：EP02714956.6

申请日：2002-02-11

Applicant: CORNING INCORPORATED

Inventor： MOORE, Lisa A., ,  SMITH, Charlene, M.,

IPC: C03B32/00 ,  C03C23/00

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The doped glass (20) is made by providing an O2 doping atmosphere (26) to a silicon oxyfluoride glass (22) in a doping vessel (28). The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a "dry," silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1x1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract translation: 公开了适用于在190nm以下的VUV波长区域中用作光刻应用的光掩模基底的高纯度氟氧化硅玻璃。 掺杂玻璃（20）通过在掺杂容器（28）中向氧氟化硅玻璃（22）提供O 2掺杂气氛（26）而制成。 本发明的氟氧化硅玻璃在约157nm的波长处是透射的，使得其在157nm波长区域作为光掩模基底特别有用。 本发明的光掩模衬底是含有掺杂的O 2分子并且在真空紫外（VUV）波长区域内具有非常高的透射率和激光透射耐久性的“干”氟氧化硅玻璃。 除了含有氟并且OH含量很少或没有OH之外，本发明的氟氧化硅玻璃含有提供改进的耐受激光曝光的间歇O2分子。 优选地，氧掺杂的氟氧化硅玻璃的特征在于具有小于1×10 17分子/ cm 3的分子氢和低氯含量。

公开(公告)号：EP1368711A1

公开(公告)日：2003-12-10

申请号：EP01995254.8

申请日：2001-11-28

Applicant: CORNING INCORPORATED

Inventor： MOORE, Lisa, A. ,  SMITH, Charlene, M.

IPC: G03F9/00 ,  G21K5/00 ,  C03C15/00

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content

公开(公告)号：EP1330680A1

公开(公告)日：2003-07-30

申请号：EP01955932.7

申请日：2001-07-24

Applicant: CORNING INCORPORATED

Inventor： BROWN, John, T. ,  CURRIE, Stephen, C. ,  MOORE, Lisa, A. ,  PAVLIK, Robert, S., Jr ,  SCHIEFELBEIN, Susan, L.

IPC: G03F9/00 ,  C03B37/027 ,  C03C3/112 ,  C03C15/00

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/06 ,  C03B2207/08 ,  C03B2207/14 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/38 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958 ,  Y02P40/57

Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1x1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract translation: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基底的高纯度直接沉积玻璃化氧氟化硅玻璃。 本发明的直接沉积玻璃化的氟氧化硅玻璃在约157nm的波长处是透射的，使得其在157nm波长区域作为光掩模基底特别有用。 本发明的光掩模基板是干式直接沉积玻璃化氧氟化硅玻璃，其在真空紫外（VUV）波长区域中显示出非常高的透射率，同时保持通常与高纯度熔融二氧化硅相关的优异热性能和物理性能。 除含有氟且OH含量很少或不含OH外，适合用作157nm处光掩模基材的本发明的直接沉积玻璃化氟氧化物玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯含量。

公开(公告)号：EP0118493B1

公开(公告)日：1989-06-21

申请号：EP83902787.7

申请日：1983-08-15

Applicant: BUARQUE DE MACEDO, Pedro Manoel ,  LITOVITZ, Theodore Aaron

Inventor： MACEDO, Pedro Manoel Buarque de ,  BARKATT, Aaron

IPC: G21F9/12 ,  G21F9/16

CPC classification number: C03C1/002 ,  C03C1/006 ,  C03C3/06 ,  C03C3/061 ,  C03C3/089 ,  C03C11/005 ,  C03C21/001 ,  C03C23/0095 ,  C03C2201/10 ,  C03C2201/20 ,  C03C2201/50 ,  G21F9/12

Abstract: A composition comprising a support such as a porous silicate glass or silica gel or charcoal having interconnected pores and containing heavy metal cations of mercury, thallium, silver, platinum, palladium, lead or copper capable of forming a stable complex with an anion bonded to the support. The preferred heavy metal cation is a mercury cation. The composition is especially useful for removing radioactive iodine from liquid and gaseous waste streams.