公开(公告)号：WO2007146395A2

公开(公告)日：2007-12-21

申请号：PCT/US2007/013985

申请日：2007-06-13

Applicant: SEMEQUIP, INC. ,  GLAVISH, Hilton, F. ,  JACOBSON, Dale, Conrad ,  HORSKY, Thomas, N. ,  HAHTO, Sami, K. ,  HAMAMOTO, Nariaki ,  NAITO, Masao ,  NAGAI, Nobuo

Inventor： GLAVISH, Hilton, F. ,  JACOBSON, Dale, Conrad ,  HORSKY, Thomas, N. ,  HAHTO, Sami, K. ,  HAMAMOTO, Nariaki ,  NAITO, Masao ,  NAGAI, Nobuo

IPC: H01J37/05

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Abstract translation: 多用途离子注入机束线配置，其包括质量分析器磁体，随后是磁扫描仪和将准弯曲引导到光束路径的光束线，所述光束线被构造用于使得能够注入常见的单原子掺杂离子簇簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的极隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在与所述梁的宽度相对应的平面中的所述质量选择孔处产生分散体，所述质量选择孔能够被设置为质量选择宽度，所述质量选择宽度的尺寸被选择为选择聚束离子的束 相同的掺杂剂种类但递增不同的分子量，质量选择孔径也能够被大大地设定 质量选择宽度较窄的分析器磁体和质量选择孔径处的分辨率足以能够选择基本上单原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：WO2005059942A3

公开(公告)日：2005-10-13

申请号：PCT/US2004041525

申请日：2004-12-09

Applicant: SEMEQUIP INC ,  HORSKY THOMAS N ,  MILGATE ROBERT W III ,  SACCO GEORGE P JR ,  JACOBSON DALE CONRAD ,  KRULL WADE ALLEN

Inventor： HORSKY THOMAS N ,  MILGATE ROBERT W III ,  SACCO GEORGE P JR ,  JACOBSON DALE CONRAD ,  KRULL WADE ALLEN

IPC: H01J20060101 ,  H01J7/24 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/02 ,  H01J27/024 ,  H01J37/08 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  Y10T137/0357 ,  Y10T137/7759 ,  Y10T137/776 ,  Y10T137/7761 ,  Y10T137/85954 ,  Y10T137/85978 ,  Y10T137/85986 ,  Y10T137/86002

Abstract: The service lifetime of an ion source (400) is enhanced or prolonged by the source having provisions for ire-situ etch cleaning of the ion source (400) and of an extraction electrode (405), using reactive halogen gases (F1, F2), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Abstract translation: 离子源（400）的使用寿命通过使用反应性卤素气体（F1，F2）的离子源（400）和提取电极（405）的ire-situ蚀刻清洁的源来增强或延长， ，并具有延长清洁之间服务持续时间的功能。 后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八碳烷烃作为原料的长设备正常运行时间以及当使用气化的元素砷和磷时能够延长设备运行时间的方法和装置，并且其用于增强离子注入期间的束稳定性。

公开(公告)号：WO2007146395A3

公开(公告)日：2008-04-10

申请号：PCT/US2007013985

申请日：2007-06-13

Applicant: SEMEQUIP INC ,  GLAVISH HILTON F ,  JACOBSON DALE CONRAD ,  HORSKY THOMAS N ,  HAHTO SAMI K ,  HAMAMOTO NARIAKI ,  NAITO MASAO ,  NAGAI NOBUO

Inventor： GLAVISH HILTON F ,  JACOBSON DALE CONRAD ,  HORSKY THOMAS N ,  HAHTO SAMI K ,  HAMAMOTO NARIAKI ,  NAITO MASAO ,  NAGAI NOBUO

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling Implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights.

Abstract translation: 多用途离子注入机束线配置，其包括质量分析器磁体，随后是磁扫描仪和磁准直器组合，其将弯曲引入光束路径，所述束线被构造用于实现普通单原子掺杂离子种类离子的注入，所述束线配置具有 质量分析器磁体，其限定磁体的铁磁极之间的相当宽度的极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在与所述梁的宽度相对应的平面中的所述质量选择孔处产生分散体，所述质量选择孔能够被设定为质量选择宽度，所述质量选择宽度的尺寸被设计成选择所述束离子的束离子 相同的掺杂物种，但递增不同的分子量。

公开(公告)号：WO2007146394A3

公开(公告)日：2007-12-21

申请号：PCT/US2007/013984

申请日：2007-06-13

Applicant: SEMEQUIP, INC. ,  GLAVISH, Hilton, F. ,  JACOBSON, Dale, Conrad ,  HORSKY, Thomas, N. ,  HAHTO, Sami, K.

Inventor： GLAVISH, Hilton, F. ,  JACOBSON, Dale, Conrad ,  HORSKY, Thomas, N. ,  HAHTO, Sami, K.

IPC: G21K5/10

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

公开(公告)号：WO2005059942A2

公开(公告)日：2005-06-30

申请号：PCT/US2004/041525

申请日：2004-12-09

Applicant: SEMEQUIP, INC. ,  HORSKY, Thomas, N. ,  MILGATE, Robert, W., III ,  SACCO, George, P., Jr. ,  JACOBSON, Dale, Conrad ,  KRULL, Wade, Allen

Inventor： HORSKY, Thomas, N. ,  MILGATE, Robert, W., III ,  SACCO, George, P., Jr. ,  JACOBSON, Dale, Conrad ,  KRULL, Wade, Allen

IPC: H01J

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/02 ,  H01J27/024 ,  H01J37/08 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  Y10T137/0357 ,  Y10T137/7759 ,  Y10T137/776 ,  Y10T137/7761 ,  Y10T137/85954 ,  Y10T137/85978 ,  Y10T137/85986 ,  Y10T137/86002

Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprises of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Abstract translation: 离子源的使用寿命通过源具有用于使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洁以及具有延长清洁之间的使用持续时间的特征的源来增强或延长。 后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远离等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和引出电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八烷硼烷作为原料的长设备正常运行时间以及当使用蒸发的元素砷和磷时能够延长设备运行时间的方法和装置，并且其用于增强离子注入期间的束稳定性。

公开(公告)号：WO2007146394A2

公开(公告)日：2007-12-21

申请号：PCT/US2007013984

申请日：2007-06-13

Applicant: SEMEQUIP INC ,  GLAVISH HILTON F ,  JACOBSON DALE CONRAD ,  HORSKY THOMAS N ,  HAHTO SAMI K

Inventor： GLAVISH HILTON F ,  JACOBSON DALE CONRAD ,  HORSKY THOMAS N ,  HAHTO SAMI K

IPC: H01J33/02

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass- selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Abstract translation: 多用途离子植入物束线配置被构造用于使得能够注入常见的单原子掺杂剂离子种类和簇离子，束线配置具有质量分析器磁体，该质量分析器磁体在磁体的铁磁极和质量选择孔之间限定相当宽度的极间距， 分析器磁体的尺寸设计成接受来自至少约80mm高度和至少约7mm宽度的槽形离子源提取孔的离子束，并且在与质量选择孔的宽度相对应的平面中产生在质量选择孔处的色散 光束，质量选择孔能够被设置为质量选择宽度，其大小用于选择相同掺杂物种类的簇离子的束，但是递增地不同的分子量，质量选择孔也能够被设定为基本上更窄的质量 选择宽度和质量选择孔径处的分辨率足以能够选择光束的分析器磁体 单原子或分子量的单原子掺杂离子。