公开(公告)号：KR101934936B1

公开(公告)日：2019-01-03

申请号：KR1020120057921

申请日：2012-05-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가토요시유키 ,  아미쿠라노리히코 ,  미요시리사코 ,  후카사와키미히로

IPC: C23C16/509 ,  C23C16/455 ,  C23C16/52

公开(公告)号：KR101882718B1

公开(公告)日：2018-07-27

申请号：KR1020110079424

申请日：2011-08-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가사와라마사히로 ,  가토요시유키 ,  미즈노히데키 ,  하야카와요시노부

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  H01J37/32091 ,  H01J37/32449 ,  H01J2237/3341

Abstract: (과제) 간이한방법을이용하여, 가스의전환시에발생하는가스유량의헌팅(hunting)을억제해, 가스유량의안정된제어를행한다. (해결수단) 에칭가스의공급방법은, 에칭프로세스에사용되는제1 에칭가스를처리용기내에공급하는스텝과, 상기에칭프로세스에사용되는제2 에칭가스를상기처리용기내에공급하는스텝을포함하고, 상기제1 에칭가스및 상기제2 에칭가스의한쪽으로부터다른한쪽으로가스를전환할때, 전환전의에칭가스로서필요하며전환후의에칭가스로서필요하지않은가스를미소량만계속공급한다.

公开(公告)号：KR1020120134074A

公开(公告)日：2012-12-11

申请号：KR1020120057921

申请日：2012-05-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가토요시유키 ,  아미쿠라노리히코 ,  미요시리사코 ,  후카사와키미히로

IPC: H01L21/205 ,  H01L21/3065

Abstract: PURPOSE: A plasma processing apparatus and a gas supply method therefor are provided to stably change process gas by controlling transient of a gas flow rate without mixing process gas converted into alternating when each process gas is converted. CONSTITUTION: A gas supply system(200) connects a respective gas supply path to a plurality of process gas sources. The gas supply system supplies desired process gas to a process chamber through the gas supply path. Flow controllers(230A-230D) are installed in each gas supply path. The flow controller controls a flow rate of gas flowing in the gas supply path by controlling openness of a flow controlling valve according to a preset flow rate. An opening/closing valve(216) is installed at a down portion of each flow controller. [Reference numerals] (133, 135) Matcher; (140) Exhaust device; (150) Control part; (152) Operational part; (154) Memory part

Abstract translation: 目的：提供一种等离子体处理装置及其气体供给方法，用于通过控制气体流量的瞬变来稳定地改变处理气体，而不会在每个处理气体被转换时将混合气体转化成交替的气体。 构成：气体供应系统（200）将相应的气体供应路径连接到多个处理气体源。 气体供应系统通过气体供应路径将所需的处理气体提供给处理室。 流量控制器（230A-230D）安装在每个气体供应路径中。 流量控制器通过根据预设流量控制流量控制阀的开度来控制在气体供给路径中流动的气体的流量。 开/关阀216安装在每个流量控制器的下部。 （附图标记）（133,135）匹配器; （140）排气装置; （150）控制部分; （152）作业部分; （154）内存部分

公开(公告)号：KR1020120024420A

公开(公告)日：2012-03-14

申请号：KR1020110079424

申请日：2011-08-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가사와라마사히로 ,  가토요시유키 ,  미즈노히데키 ,  하야카와요시노부

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  H01J37/32091 ,  H01J37/32449 ,  H01J2237/3341

Abstract: PURPOSE: An etching device and a method for supplying etching gas are provided to stably control gas flow rate by controlling hunting of the gas flow rate generating when gas is changed. CONSTITUTION: First etching gas which is used for an etching process is provided within a treatment basin. Second etching gas used for the etching process is provided within the treatment basin. The flow rate of the second etching gas and the first etching gas is controlled by a gas flow rate control device. The change of the second etching gas and the first etching gas is processed by turns. A gas supply source supplies the second etching gas and the first etching gas to the treatment basin.

Abstract translation: 目的：提供蚀刻装置和提供蚀刻气体的方法，通过控制气体变化时产生的气体流量的波动来稳定地控制气体流量。 构成：在处理池内设置用于蚀刻处理的第一蚀刻气体。 用于蚀刻工艺的第二蚀刻气体设置在处理池内。 第二蚀刻气体和第一蚀刻气体的流量由气体流量控制装置控制。 第二蚀刻气体和第一蚀刻气体的变化被轮流处理。 气体供给源将第二蚀刻气体和第一蚀刻气体供给到处理池。