탑재대 및 플라즈마 처리 장치
    1.
    发明公开
    탑재대 및 플라즈마 처리 장치 审中-实审
    安装台和等离子体加工设备

    公开(公告)号:KR1020140108141A

    公开(公告)日:2014-09-05

    申请号:KR1020140022509

    申请日:2014-02-26

    CPC classification number: H01L21/6831 H01L21/67109 H01L21/6875 Y10T279/23

    Abstract: A purpose of the present invention is to restrain ununiformity of temperatures in a central area and an edge area of a workpiece. A mounting table includes: a base part having a flow path for a refrigerant formed therein; and an electrostatic chuck which is mounted on the base part and has a mounting surface for mounting the workpiece to electrostatically absorb the workpiece. The base part includes: a first upper surface on which the electrostatic chuck is mounted; a ring-shaped second upper surface which is located lower than the first upper side on the outside of the first upper side to mount a focus ring; and a side surface extending between the first upper surface and the second upper surface in the vertical direction. The flow path extends from the lower part of the second upper surface, and has a part extending toward the first upper surface along the side surface from the lower part of the first upper surface. The mounting surface has a plurality of dot-shaped convex parts coming in contact with the rear side of the workpiece, and in relation with the size per unit area of the area where the convex parts and the rear side of the workpiece come in contact with each other, the edge area of the mounting surface is larger than the area of the central part of the mounting surface.

    Abstract translation: 本发明的目的是抑制工件的中心区域和边缘区域中的温度的不均匀性。 安装台包括:具有形成在其中的制冷剂的流路的基部; 以及安装在基座上并具有用于安装工件的安装表面以静电吸收工件的静电卡盘。 基部包括:安装有静电卡盘的第一上表面; 位于第一上侧的外侧的第一上侧的环状的第二上表面,以安装聚焦环; 以及在垂直方向上在第一上表面和第二上表面之间延伸的侧表面。 流路从第二上表面的下部延伸,并且具有从第一上表面的下部沿着侧面向第一上表面延伸的部分。 安装面具有与工件的后侧接触的多个点状凸部,并且与工件的凸部和后侧接触的区域的每单位面积的尺寸相关联 彼此之间,安装表面的边缘区域大于安装表面的中心部分的面积。

    정전 흡착 방법 및 기판 처리 장치
    2.
    发明公开
    정전 흡착 방법 및 기판 처리 장치 审中-实审
    静电切割方法和基板加工设备

    公开(公告)号:KR1020160078917A

    公开(公告)日:2016-07-05

    申请号:KR1020150185844

    申请日:2015-12-24

    CPC classification number: H01L21/6833 H01L21/67109 H02N13/00

    Abstract: 본발명은포커스링과정전척에의해샌드위치되는공간에공급되는열 매체의리크량의증대를억제하는것을목적으로한다. 정전흡착방법은, 기판이탑재되는정전척과, 기판이탑재되는영역을둘러싸고정전척 상에마련된포커스링과, 포커스링과정전척의사이에샌드위치되는공간에열 매체를공급하는공급부와, 정전척 내부의, 포커스링에대응하는영역에마련되는복수의전극을구비한기판처리장치를이용한정전흡착방법으로서, 기판을플라즈마처리하기위한플라즈마가생성되는기간인플라즈마처리기간에있어서공급부에의해서공간에열 매체를공급하고, 플라즈마처리기간이외의다른기간에있어서, 포커스링을정전척에흡착하도록복수의전극에서로다른전압을인가한다.

    Abstract translation: 本发明的目的是抑制供给到由聚焦环和静电卡盘夹持的空间的加热介质的泄漏量的增加。 本发明涉及使用基板处理单元的静电吸收方法,该基板处理单元包括安装有基板的静电卡盘; 所述聚焦环围绕安装有所述基板的区域,并且布置在所述静电卡盘上; 供应部件,其将加热介质供应到夹在聚焦环和静电卡盘之间的空间; 以及布置在与静电卡盘内部的聚焦环相对应的区域上的多个电极。 此外,静电吸收方法的特征在于,在等离子体处理期间,通过供给部供给加热介质,该等离子体处理期间是等离子体生成等离子体的周期,用于等离子体处理基板; 并且在除了等离子体处理周期之外的其它周期中,将不同的电压施加到用于将聚焦环吸收到静电卡盘上的电极。

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