-
公开(公告)号：KR1020100086947A
公开(公告)日：2010-08-02
申请号：KR1020100005232
申请日：2010-01-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: C23C16/345 , C23C16/4401 , C23C16/452 , H01J37/321 , H01J37/3244
Abstract: PURPOSE: A plasma processing device is provided to reduce particles by preventing the inner side of a cover from being etched due to the sputter of ions. CONSTITUTION: A gas activating device(60) converts a process gas into plasma and includes a vertical plasma generating box(64), an ICP(Inductively Coupled Plasma) electrode(66), and a frequency power source connected to the electrode. The plasma generation box is attached to the process container to correspond to the process region and shuts down the plasma generation region connected to the processing region. The ICP electrode is arranged outside the plasma generation box along the length direction of the plasma generation box and includes a space separated from the wall of the plasma generation box.
Abstract translation: 目的：提供等离子体处理装置以通过防止由于离子溅射而使盖的内侧被蚀刻而减少颗粒。 构成：气体激活装置（60）将处理气体转换成等离子体，并且包括垂直等离子体产生箱（64），ICP（感应耦合等离子体）电极（66）和连接到电极的频率电源。 将等离子体生成盒连接到处理容器以对应于处理区域并且关闭连接到处理区域的等离子体产生区域。 ICP电极沿着等离子体生成箱的长度方向配置在等离子体发生箱的外侧，具有与等离子体发生箱壁隔开的空间。
-
Patent Agency Ranking
公开(公告)号：KR3003719340000S
公开(公告)日：2005-01-13
申请号：KR3020040012802
申请日：2004-05-04
Applicant: 도쿄엘렉트론가부시키가이샤
-
公开(公告)号：KR101274616B1
公开(公告)日：2013-06-13
申请号：KR1020100005232
申请日：2010-01-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: C23C16/345 , C23C16/4401 , C23C16/452 , H01J37/321 , H01J37/3244
Abstract: 복수매의 피(被)처리체에 대하여 함께 플라즈마 처리를 행하는 종형 플라즈마 처리 장치는, 처리 가스를 플라즈마화하는 활성화 기구를 구비한다. 활성화 기구는, 처리 영역에 대응하여 처리 용기에 부착되고 그리고 처리 영역으로 기밀하게 연이어 통하는 플라즈마 생성 영역을 가두는 세로로 긴 플라즈마 생성 박스와, 플라즈마 생성 박스의 외측에서 플라즈마 생성 박스의 길이 방향을 따라서 배치된 ICP 전극과, 전극에 접속된 고주파 전원을 구비한다. ICP 전극은, 플라즈마 생성 박스의 벽면으로부터 소정 거리만큼 떨어지는 이간(離間) 부분을 구비한다.
-
公开(公告)号：KR1020140118883A
公开(公告)日：2014-10-08
申请号：KR1020140035778
申请日：2014-03-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/67
CPC classification number: H01L21/67017 , Y10T137/0396 , Y10T137/87169 , H01L21/67253
Abstract: An objective of the present invention is to provide a processing method which enables a pressure within a processing container to reach a desired pressure value or a desired pressure range in a short time. A processing method is provided in which an object to be processed is processed within a processing container connected to a gas supply system, an exhaust system and an opening degree variable valve by using a processing gas in a plurality of sequential processing steps. The processing method includes: an acquisition process for acquiring an opening degree of the opening degree variable valve corresponding to a target pressure value within the processing container under a predetermined processing condition for at least one of the plurality of sequential processing steps; and an execution process for executing the one of the sequential processing steps for which the opening degree has been acquired by the acquisition process with the opening degree.
Abstract translation: 本发明的目的是提供一种使处理容器内的压力在短时间内达到所需压力值或期望压力范围的处理方法。 提供一种处理方法，其中通过在多个顺序处理步骤中使用处理气体，在连接到气体供应系统，排气系统和开度可变阀的处理容器内处理待处理物体。 处理方法包括：获取处理，用于在多个顺序处理步骤中的至少一个处理条件下，在预定处理条件下获取与处理容器内的目标压力值相对应的开度可变阀的开度; 以及执行处理，用于执行通过获取过程以开度获得了开放度的顺序处理步骤中的一个。
-
公开(公告)号：KR3003719360000S
公开(公告)日：2005-01-13
申请号：KR3020040012804
申请日：2004-05-04
Applicant: 도쿄엘렉트론가부시키가이샤
-
公开(公告)号：KR3003719350000S
公开(公告)日：2005-01-13
申请号：KR3020040012803
申请日：2004-05-04
Applicant: 도쿄엘렉트론가부시키가이샤
-
-
-
-
-
Search Results
6
records
(took 0.016 seconds)
