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公开(公告)号：KR101913676B1
公开(公告)日：2018-10-31
申请号：KR1020120017271
申请日：2012-02-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/32137
Abstract: 에칭레이트를저하시키지않고애스펙트비가높은홀 등을실리콘층에형성할수 있는기판처리방법을제공한다. 웨이퍼(W)의폴리실리콘층(38)이취화(臭化) 수소가스, 산소가스및 삼불화질소가스를포함하는처리가스로부터생성된플라즈마중의취소양이온(45a) 및취소라디칼(45b)로에칭되고, 산소가스및 질소가스를포함하는처리가스로부터생성된플라즈마중의산소라디칼(46) 및질소라디칼(47)로애싱되고, 아르곤가스및 삼불화질소가스를포함하는처리가스로부터생성된플라즈마중의불소양이온(48a) 및불소라디칼(48b)로에칭되고, 상기애싱시, 취소양이온(45a) 등에의한폴리실리콘층(38)의에칭으로생성된취화규소에산화처리가실시된다.
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公开(公告)号：KR1020150014434A
公开(公告)日：2015-02-06
申请号：KR1020147026698
申请日：2013-04-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/12
CPC classification number: H01L43/12 , H01J37/32009 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32807 , H01J37/32825 , H01J37/32834 , H01J37/32908 , H01J2237/18 , H01J2237/327 , H01J2237/3341
Abstract: 플라즈마 처리 방법은, 플라즈마가 생성되는 처리 공간(S)을 구획 형성하는 처리 용기(12)와, 처리 공간(S) 내로 처리 가스를 공급하는 가스 공급부(44)를 구비하는 플라즈마 처리 장치(10)를 이용하여, 제 1 자성층(105) 및 제 2 자성층(103)이 절연층(104)을 개재하여 적층된 적층 구조를 포함하는 다층막 재료를 에칭하는 플라즈마 처리 방법으로서, 처리 용기(12)로 제 1 처리 가스를 공급하고, 플라즈마를 발생시켜 제 1 자성층(105)을 에칭하고, 절연층(104)의 표면에서 에칭을 종료하는 제 1 에칭 공정과, 처리 용기(12)로 제 2 처리 가스를 공급하고, 플라즈마를 발생시켜 제 1 에칭 공정에서 생성된 잔류물(Z)을 제거하는 제 2 에칭 공정을 구비하고, 제 1 자성층(105) 및 제 2 자성층(103)은 CoFeB를 포함하고, 제 1 처리 가스는 Cl
2 를 포함하고, 제 2 처리 가스는 H
2 를 포함� �다.Abstract translation: 蚀刻具有第一磁性层105和第二磁性层103层叠有绝缘层104的结构的多层材料的等离子体处理方法通过包括处理室12的等离子体处理装置10进行，处理室12的处理空间S 形成了; 以及将处理气体供给到处理空间中的气体供给部44，其包括通过供给第一处理而产生等离子体来蚀刻第一磁性层的第一蚀刻工序，在第一蚀刻工序 绝缘层; 以及通过供给第二处理气体并产生等离子体来除去残渣Z的第二蚀刻工艺。 第一磁性层和第二磁性层含有CoFeB，第一处理气体含有Cl 2，第二处理气体含有H 2。
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公开(公告)号：KR1020140063453A
公开(公告)日：2014-05-27
申请号：KR1020130138483
申请日：2013-11-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H01L43/12 , H01J37/32449 , H01J37/32724
Abstract: Provided are a plasma processing method and a plasma processing device, capable of improving properties of an MRAM element by preventing a leak current. The plasma processing method comprises etching a multi-layered material by using a plasma processing device. The device of the present invention includes a processing container and a gas supply part. The multi-layered material includes a lamination structure laminated in order of a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material. The method includes a mask forming process and an etching process. In the mask forming process, a mask is formed on the second magnetic layer by etching the mask material. In the etching process, process gas is supplied to the processing container, plasma is generated, the second magnetic layer is etched by using the mask, and the etching is terminated on the insulating layer, wherein the second magnetic layer includes CoFeB. The insulating layer includes MgO. The processing gas includes H_2 and F or fluoric compound.
Abstract translation: 提供了能够通过防止泄漏电流来改善MRAM元件的特性的等离子体处理方法和等离子体处理装置。 等离子体处理方法包括通过使用等离子体处理装置来蚀刻多层材料。 本发明的装置包括处理容器和气体供给部。 多层材料包括按照第一磁性层，绝缘层，第二磁性层和掩模材料的顺序层叠的叠层结构。 该方法包括掩模形成工艺和蚀刻工艺。 在掩模形成工艺中，通过蚀刻掩模材料在第二磁性层上形成掩模。 在蚀刻工序中，将处理气体供给至处理容器，生成等离子体，利用掩模蚀刻第二磁性层，在绝缘层上终止蚀刻，其中第二磁性层包括CoFeB。 绝缘层包括MgO。 处理气体包括H_2和F或氟化合物。
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公开(公告)号：KR102056751B1
公开(公告)日：2019-12-17
申请号：KR1020147026698
申请日：2013-04-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/12
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公开(公告)号：KR1020140051090A
公开(公告)日：2014-04-30
申请号：KR1020130125252
申请日：2013-10-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32082 , C23F1/02 , C23F4/00 , H01J2237/334 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32139
Abstract: Provided is a method for etching the copper layer of an object. A mask having a pattern to be transferred is formed on the copper layer. The method of one embodiment includes a process (a) of etching the copper layer by using the plasma of a first gas including hydrogen gas, and a process (b) of processing the object by using the plasma of a second gas including a gas which has a deposition property to the object. The process (a) of etching the copper layer by using the plasma of the first gas and the process (b) of processing the object by using the plasma of the second gas are alternately carried out. [Reference numerals] (AA) Start; (BB) End; (S1a) Making a resist mask; (S1b) Etching a middle layer; (S1c) Etching a lower layer; (S2a) Etching a mask layer; (S2b) Ashing; (S3) Etching a copper layer by using the plasma of a first gas; (S4) Processing the object by using the plasma of a second gas; (S5) Was the cycle repeated a preset number of times?; (S6) Etching the copper layer by using the plasma of the first gas; (S7) Ashing
Abstract translation: 提供一种用于蚀刻物体的铜层的方法。 在铜层上形成具有待转印图案的掩模。 一个实施例的方法包括通过使用包括氢气的第一气体的等离子体来蚀刻铜层的工艺（a）和通过使用包括气体的第二气体的等离子体来处理物体的方法（b） 对物体具有沉积特性。 交替进行使用第一气体的等离子体蚀刻铜层的工序（a）和使用第二气体的等离子体来处理物体的工序（b）。 （附图标记）（AA）开始; （BB）结束; （S1a）制作抗蚀剂面膜; （S1b）蚀刻中间层; （S1c）蚀刻下层; （S2a）蚀刻掩模层; （S2b）灰化; （S3）使用第一气体的等离子体蚀刻铜层; （S4）通过使用第二气体的等离子体来处理物体; （S5）周期是否重复预设次数？ （S6）使用第一气体的等离子体蚀刻铜层; （S7）灰化
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Patent Agency Ranking
公开(公告)号：KR1020120107883A
公开(公告)日：2012-10-04
申请号：KR1020120029197
申请日：2012-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01L21/32136 , C23F4/00 , H01J37/32091 , H01L43/12
Abstract: PURPOSE: A substrate processing method and a storage medium are provided to etch a layer including platinum without the use of halogen gas using process gas including carbon monoxide gas, hydrogen gas, and inert gas. CONSTITUTION: A chamber(11) receives a wafer(W). A susceptor(12) mounting the wafer on an upper side thereof is arranged within the chamber. A lateral side exhaust duct(13) is formed with an inner wall of the chamber and a side of the susceptor. An exhaust plate(14) divides the inside of the chamber into top and lower portions. A first radio frequency power source(18) is connected to the susceptor by interposing a first adapter(19).
Abstract translation: 目的：提供基板处理方法和存储介质以使用包括一氧化碳气体，氢气和惰性气体的工艺气体在不使用卤素气体的情况下蚀刻包括铂的层。 构成：腔室（11）接收晶片（W）。 将晶片安装在其上侧的基座（12）布置在室内。 侧面排气管（13）形成有室的内壁和基座的一侧。 排气板（14）将腔室的内部分成上部和下部。 第一射频电源（18）通过插入第一适配器（19）连接到基座。
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公开(公告)号：KR1020100081916A
公开(公告)日：2010-07-15
申请号：KR1020090103383
申请日：2009-10-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/0273 , G03F7/0035 , G03F7/40 , G03F7/427 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/32139 , G03F7/2022 , G03F7/70466
Abstract: PURPOSE: A method for forming a fine pattern is provided to reduce the difference of the critical dimension values of a pattern on a layer to be etched with a first pattern and a pattern on a layer to be etched with a second pattern by reducing the difference of the critical dimension values of the first pattern and the second pattern. CONSTITUTION: A wafer table(23) is arranged in a chamber(22). A shower head(24) is arranged above the wafer table. A turbo molecular pump(25) exhausts gas in the chamber. An adaptive pressure control valve(26) controls the pressure in the chamber. A high frequency power unit(27) supplies high frequency power to the wafer table. The wafer table applies the high frequency power from the high frequency power unit to a processing space(S).
Abstract translation: 目的：提供一种用于形成精细图案的方法，以通过减小差异来减少待蚀刻层上的图案的临界尺寸值与第一图案和待蚀刻层上的图案之间的差异 的第一图案和第二图案的临界尺寸值。 构成：晶片台（23）布置在室（22）中。 淋浴头（24）布置在晶片台的上方。 涡轮分子泵（25）排出腔室中的气体。 自适应压力控制阀（26）控制腔室中的压力。 高频功率单元（27）向晶片台提供高频功率。 晶片台将高频功率单元的高频功率应用于处理空间（S）。
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公开(公告)号：KR101858162B1
公开(公告)日：2018-05-15
申请号：KR1020130138483
申请日：2013-11-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H01L43/12 , H01J37/32449 , H01J37/32724
Abstract: 리크전류를방지하여 MRAM 소자의특성을향상시킬수 있는플라즈마처리방법및 플라즈마처리장치를제공한다. 플라즈마처리방법은, 플라즈마처리장치를이용하여다층막재료를에칭한다. 이장치는처리용기및 가스공급부를구비한다. 다층막재료는제 1 자성층, 절연층, 제 2 자성층및 마스크재료의순으로적층된적층구조를포함한다. 이방법은마스크를형성하는공정및 에칭공정을구비한다. 마스크를형성하는공정에서는, 마스크재료를에칭하여제 2 자성층상에마스크를형성한다. 에칭공정에서는, 처리용기로처리가스를공급하고, 플라즈마를발생시키고, 마스크를이용하여제 2 자성층을에칭하고, 절연층의표면에서에칭을종료한다. 여기서, 제 2 자성층은 CoFeB를포함한다. 절연층은 MgO을포함한다. 처리가스는 H및 F 혹은불소화합물을포함한다.
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公开(公告)号：KR1020140056051A
公开(公告)日：2014-05-09
申请号：KR1020130129029
申请日：2013-10-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , G11C11/15
CPC classification number: H01L43/12 , G11C11/161 , H01J37/32091
Abstract: Gas which etches and treats a metal laminated layer is optimized by placing an insulating layer through a double-layered magnetic body. The present invention relates to an etching processing method which etches a multi-layer film material including the metal laminated layer which is layered by placing the insulating layer through first and second magnetic bodies. The present invention provides the etching processing method comprising; an etching process of producing plasma by supplying gas including C, O, and H in a processing container and etching the metal laminated layer by the plasma; and a treatment process of producing plasma by supplying gas including CF4 gas in the processing container and treating the metal laminated layer by the plasma.
Abstract translation: 通过将绝缘层穿过双层磁体来优化蚀刻和处理金属层压层的气体。 蚀刻处理方法技术领域本发明涉及一种腐蚀处理方法，该方法通过将绝缘层通过第一和第二磁性体放置而蚀刻包括金属层压层的多层膜材料。 本发明提供了一种蚀刻处理方法，包括： 通过在处理容器中供给包括C，O和H的气体并通过等离子体蚀刻金属层叠层来产生等离子体的蚀刻工艺; 以及通过在处理容器中供给包含CF 4气体的气体并通过等离子体处理金属层叠层来制造等离子体的处理工序。
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公开(公告)号：KR101080861B1
公开(公告)日：2011-11-07
申请号：KR1020090103383
申请日：2009-10-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/0273 , G03F7/0035 , G03F7/40 , G03F7/427 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/32139
Abstract: LLE에의해미세패턴을형성할때에공정수를삭감할수 있고, 제 1 패턴과제 2 패턴의 CD 값의차이를줄일수 있는미세패턴의형성방법을제공한다. 제 1 형상가공공정과, 제 2 형상가공공정과, 에칭공정을가지고, 제 1 형상가공공정은제 1 레지스트막으로이루어지는패턴을형성하는제 1 패턴형성단계(S13)와, 그패턴을트리밍처리하는제 1 트리밍단계(S14)과, 그패턴상에에칭가스의반응생성물로이루어지는보호막을퇴적하고제 1 패턴으로가공하는보호막퇴적단계(S15)를가지고, 제 2 형상가공공정은제 1 패턴과교호로배열되고제 2 레지스트막으로이루어지는패턴을형성하는제 2 패턴형성단계(S17)와, 그패턴을트리밍처리하여제 2 패턴으로가공하는제 2 트리밍단계(S18)를가진다.
Abstract translation: 提供一种精细图案的形成方法，其能够减少通过LLE形成精细图案时的步骤数量并减小第一图案任务2图案的CD值差异。 第一形状处理步骤，第二形状处理步骤和蚀刻步骤，第一形状处理步骤包括：形成由第一抗蚀剂膜构成的图案的第一图案形成步骤（S13） 以及保护膜沉积步骤（S15），其在所述图案上沉积由所述蚀刻气体的反应产物构成的保护膜并将所述图案处理成第一图案，其中所述第二形状处理步骤包括第一图案 第二图案形成步骤（S17），用于形成由交替布置的第二抗蚀剂膜构成的图案;以及第二修整步骤（S18），用于修整图案以形成第二图案。
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