公开(公告)号：KR101059314B1

公开(公告)日：2011-08-24

申请号：KR1020097004654

申请日：2007-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  미야시타히로유키 ,  요네다마사타케 ,  스즈키도모히로 ,  다나카스미 ,  노무라마사미치 ,  시미즈미와

IPC: H01L21/324 ,  H01L21/26

CPC classification number: H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

Abstract translation: 本发明提供一种退火装置，其不存在因发热引起的发光量减少而导致的光能量利用率降低，能够维持稳定的性能的问题。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b，其包括LED33并面向晶片W的表面以向晶片W上照射光; 透光构件18a和18b，其与加热源17a和17b对齐地布置以透射从LED 33发射的光; 在处理容器1的相反侧支撑透光部件18a和18b以便与加热源17a和17b直接接触并由高热导率材料制成的冷却部件4a和4b; 以及用冷却剂冷却冷却构件4a和4b的冷却机构。

公开(公告)号：KR1020110022740A

公开(公告)日：2011-03-07

申请号：KR1020117003539

申请日：2007-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  미야시타히로유키 ,  요네다마사타케 ,  스즈키도모히로 ,  다나카스미 ,  노무라마사미치 ,  시미즈미와

IPC: H01L21/324 ,  H01L21/26

CPC classification number: H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: 열의 영향에 의한 발광량의 저하에 기인하는 광에너지 효율이 낮다고 하는 문제가 발생하지 않고 안정된 성능을 유지할 수 있는 어닐 장치를 제공 한다.
웨이퍼(W)가 수용되는 처리실(1)과, 웨이퍼(W)의 면에 면하도록 마련되어, 웨이퍼(W)에 대하여 광을 조사하는 복수의 LED(33)를 가지는 가열원(17a, 17b)과, 가열원(17a, 17b)에 대응해서 마련되어, 발광 소자(33)로부터의 광을 투과하는 광투과 부재(18a, 18b)와, 광투과 부재(18a, 18b)의 처리실(1)과 반대측을 지지하고, 가열원(17a, 17b)에 직접 접촉하도록 마련된 고열전도성 재료로 이루어지는 냉각 부재(4a, 4b)와, 냉각 부재(4a, 4b)를 냉각 매체로 냉각하는 냉각 기구를 가진다.

公开(公告)号：KR1020090045314A

公开(公告)日：2009-05-07

申请号：KR1020097004654

申请日：2007-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  미야시타히로유키 ,  요네다마사타케 ,  스즈키도모히로 ,  다나카스미 ,  노무라마사미치 ,  시미즈미와

IPC: H01L21/324 ,  H01L21/26

CPC classification number: H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.