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公开(公告)号：KR101377776B1
公开(公告)日：2014-03-25
申请号：KR1020090035752
申请日：2009-04-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: G03F7/38 , H01L21/67225 , H01L21/67248
Abstract: 검사용웨이퍼상에레지스트패턴을형성하고(스텝 S1), 당해레지스트패턴의제1 선폭을측정한다(스텝 S2). 제1 선폭의측정결과를기초로하여 PEB 처리의가열온도가각 열판영역마다보정된다(스텝 S3, 스텝 S4). 보정된가열온도에서 PEB 처리를행하여검사용웨이퍼상에레지스트패턴을형성하고(스텝 S5), 당해레지스트패턴의제2 선폭을측정한다(스텝 S6). 제2 선폭의웨이퍼면내분포로부터선형성분을산출하고(스텝 S7), 당해선형성분을기초로하여노광량이각 노광영역마다보정된다(스텝 S8, 스텝 S9). 이후, 보정된가열온도에서 PEB 처리를행하는동시에, 보정된노광량으로노광처리를행하고, 웨이퍼상에소정의레지스트패턴을형성한다(스텝 S10).
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公开(公告)号：KR1020090113209A
公开(公告)日：2009-10-29
申请号：KR1020090035752
申请日：2009-04-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: G03F7/38 , H01L21/67225 , H01L21/67248 , G03F7/7055 , G03F7/70558 , G03F7/70625 , G03F7/70875 , G03F7/70891 , H01L21/67098
Abstract: PURPOSE: A substrate treating method, a program, a computer storage medium, and a substrate treating system are provided to uniformly form a resist pattern of a fixed size on a substrate. CONSTITUTION: A substrate treating system performs a photolithography process on a substrate, forms a resist pattern on the substrate, and includes a heat treating device, an exposure device(A), a pattern size measuring device(20), and a control device(200). The heat treating device performs a heat process on the substrate. The exposure device performs an exposure process on the substrate. The pattern size measuring device measures a size of the resist pattern on the substrate. The control device corrects a process temperature of the heat treating device and an exposure process condition of the exposure device.
Abstract translation: 目的：提供基板处理方法，程序，计算机存储介质和基板处理系统，以在基板上均匀地形成固定尺寸的抗蚀剂图案。 构成：基板处理系统在基板上进行光刻工序，在基板上形成抗蚀剂图案，并且包括热处理装置，曝光装置（A），图案尺寸测量装置（20）和控制装置（ 200）。 热处理装置对基板进行热处理。 曝光装置对基板进行曝光处理。 图案尺寸测量装置测量衬底上的抗蚀剂图案的尺寸。 控制装置校正热处理装置的处理温度和曝光装置的曝光处理条件。
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公开(公告)号：KR101070520B1
公开(公告)日：2011-10-05
申请号：KR1020070061944
申请日：2007-06-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/67742 , G03F7/168 , G03F7/26 , G03F7/40 , H01L21/31058 , H01L21/67109 , H01L21/67178 , H01L21/67748
Abstract: 기판처리방법은, 도포막이형성된기판에대해, 상기도포막을가열경화시키는열 처리를행한다. 우선, 상기도포막의소정성분의분포를조정하기위해상기도포막이형성된상기기판을상기도포막이가열경화되는하한온도보다도낮은예비온도로유지한다. 다음에, 상기소정성분의분포를조정한후의상기기판을, 상기하한온도이상의온도로열 처리한다.
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公开(公告)号：KR1020070122390A
公开(公告)日：2007-12-31
申请号：KR1020070061944
申请日：2007-06-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/67742 , G03F7/168 , G03F7/26 , G03F7/40 , H01L21/31058 , H01L21/67109 , H01L21/67178 , H01L21/67748 , H01L21/0274 , G03F1/60 , G03F7/202
Abstract: A substrate process method is provided to control a variation in a line width in a substrate after a coating layer is heated and hardened by including a computer readable memory medium. A substrate(W) having a coating layer(150) is maintained at a preliminary temperature lower than a lowest limit temperature at which the coating layer is heated and hardened so as to adjust the distribution of a predetermined component(151) of the coating layer. A heat treatment is performed on the substrate at a temperature higher than the lowest limit temperature. The temperature higher than the lowest limit temperature can be a temperature at which the coating layer is hardened or crosslinked.
Abstract translation: 提供了一种基板处理方法，用于通过包括计算机可读存储介质来加热和硬化涂层之后，控制基板中线宽的变化。 将具有被覆层（150）的基板（W）保持在比被覆层被加热硬化的最低极限温度以下的预备温度，调整涂布层的规定成分（151）的分布 。 在高于最低极限温度的温度下对基板进行热处理。 高于最低温度的温度可以是涂层硬化或交联的温度。
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