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    처리 장치 부품의 조립 기구 및 그 조립 방법
    1.
    发明授权
    처리 장치 부품의 조립 기구 및 그 조립 방법 有权
    装配加工装置部分的机构和方法

    公开(公告)号：KR100638917B1

    公开(公告)日：2006-10-25

    申请号：KR1020057005918

    申请日：2001-05-16

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 센자키시게루 ,  사사키도시키 ,  아오토다다시 ,  나가야마노부유키 ,  미츠하시고우지

    IPC: H01L21/3065

    CPC classification number: H01J37/32458

    Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.

    처리 장치 및 그 유지 보수 방법
    2.
    发明授权
    처리 장치 및 그 유지 보수 방법 有权
    处理装置和维护装置的方法，用于组装加工装置部件的机构和方法以及用于锁定锁定机构的锁定机构和方法

    公开(公告)号：KR100638916B1

    公开(公告)日：2006-10-25

    申请号：KR1020027015433

    申请日：2001-05-16

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 센자키시게루 ,  사사키도시키 ,  아오토다다시 ,  나가야마노부유키 ,  미츠하시고우지

    IPC: H01L21/3065

    CPC classification number: H01J37/32458

    Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.

    탑재대 및 플라즈마 처리 장치
    3.
    发明公开
    탑재대 및 플라즈마 처리 장치 审中-实审
    安装台和等离子体加工设备

    公开(公告)号：KR1020140107279A

    公开(公告)日：2014-09-04

    申请号：KR1020147016724

    申请日：2012-12-17

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 사사키야스하루 ,  스가마타다케시 ,  아오토다다시

    IPC: H01L21/683 ,  H01L21/3065 ,  C09J201/00

    CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01L2221/683

    Abstract: 본 발명은 정전 척의 접착 결합에 이용되는 접착제의 열화를 방지할 수 있는 탑재대(70), 및 그러한 탑재대(70)를 구비하는 플라즈마 처리 장치(10)를 제공하는 것을 목적으로 한다. 탑재대(70)는 정전 척(50), 베이스(14) 및 통형상의 슬리브(80)를 구비한다. 정전 척(50)은 플라즈마에 노출되는 표면 및 이 표면과 대향하는 이면을 갖고, 제 1 관통 구멍이 형성된다. 베이스(14)는 정전 척(50)의 이면에 제 1 접착제(71)에 의해서 접합되고, 제 1 관통 구멍에 연통되어 상기 제 1 관통 구멍의 구경(R1)보다 큰 구경(R2)의 제 2 관통 구멍이 형성된다. 슬리브(80)는, 제 2 접착제(72)에 의해서, 제 1 관통 구멍과 연통한 상태로 정전 척(50)의 이면에 접합된다.

    탑재대의 표면 처리 방법
    6.
    发明公开
    탑재대의 표면 처리 방법 有权
    安装阶段的表面处理方法

    公开(公告)号：KR1020080089256A

    公开(公告)日：2008-10-06

    申请号：KR1020080028971

    申请日：2008-03-28

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 아오토다다시 ,  기쿠치에이이치로 ,  히구마마사카즈 ,  히구치기미히로

    IPC: H01L21/687 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: H01L21/67103 ,  H01L21/6875

    Abstract: A surface processing method for mounting a stage is provided to form a mounting surface corresponding to a substrate by planarizing the mounting surface. A wafer(W) is transferred into a chamber and is mounted on a mounting surface of the ESC(ElectroStatic Chuck)(S31). A high DC voltage is applied to the electrostatic electrode plate so that the wafer is electrostatically attracted to the mounting surface(S32). A processing gas is turned into plasma in a processing space(S33). The remaining processing gas is exhausted out of the chamber and the wafer is transferred out from the chamber(S34). The integrated time period of the radio frequency electrical power is compared with a predetermined time period(S35).

    Abstract translation: 提供了一种用于安装台架的表面处理方法，以通过平坦化安装表面形成与基板相对应的安装表面。 将晶片（W）转移到室中并安装在ESC（静电卡盘）的安装表面上（S31）。 向静电极板施加高的直流电压，使得晶片被静电吸引到安装面（S32）。 在处理空间中处理气体变成等离子体（S33）。 剩余的处理气体从室中排出，并且将晶片从室转出（S34）。 将射频电力的积分时间与预定时间段进行比较（S35）。

    기판 탑재대 및 그 표면 처리 방법
    10.
    发明公开
    기판 탑재대 및 그 표면 처리 방법 有权
    基板安装阶段及其表面处理方法

    公开(公告)号：KR1020080076802A

    公开(公告)日：2008-08-20

    申请号：KR1020080013475

    申请日：2008-02-14

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 히구마마사카즈 ,  사사키야스하루 ,  아오토다다시 ,  기쿠치에이이치로

    IPC: H01L21/02 ,  H01L21/00

    CPC classification number: H01L21/68757 ,  C23C16/4581 ,  H01J37/20 ,  H01L21/67366 ,  H01L21/6875

    Abstract: A substrate mounting stage and a method for treating a surface thereof are provided to prevent particles due to contact between a wafer and a surface of an electrostatic chuck. A substrate mounting stage(12) having a substrate mounting plane for mounting substrates is implemented in a substrate treatment unit for processing a treatment on the substrates. An arithmetic average roughness of the substrate mounting plane is more than a first predetermined value. An initial wear height of the substrate mounting plane is less than a second predetermined value. The first predetermined value is 0.45. The second predetermined value is 0.35. A roughness curve skewness of the substrate mounting plane is less than -1.5.

    Abstract translation: 提供了基板安装台及其表面处理方法，以防止晶片与静电卡盘的表面之间的接触造成的颗粒。 在基板处理单元中实现具有用于安装基板的基板安装面的基板安装台（12），用于对基板进行处理。 基板安装面的算术平均粗糙度大于第一预定值。 基板安装面的初始磨损高度小于第二预定值。 第一预定值为0.45。 第二预定值为0.35。 基板安装面的粗糙度曲线偏度小于-1.5。

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