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Patent Agency Ranking
公开(公告)号：KR1020100022535A
公开(公告)日：2010-03-02
申请号：KR1020107001702
申请日：2008-07-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/314 , H01L21/768
CPC classification number: H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
Abstract: The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.
Abstract translation: 本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮的密度从氟化绝缘膜和SiCN膜之间的界面减小。 在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。
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公开(公告)号：KR101198107B1
公开(公告)日：2012-11-12
申请号：KR1020097011467
申请日：2007-11-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/26 , H01L21/31 , H01L21/768 , H01L23/522
CPC classification number: H01L23/5329 , C23C16/26 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
Abstract: 본 발명은 비유전율을 낮게 억제하면서도 탄성율이 높고, 또한 열수축률이 작은 비결정 탄소막 및 그 막을 구비한 반도체 장치, 그리고 비결정 탄소막을 성막하는 기술을 제공한다. 성막 시에 Si(실리콘)의 첨가량을 제어하면서 비결정 탄소막을 성막한다. 이 때문에, 비유전율을 3.3 이하의 낮은 값으로 억제하면서도 탄성율이 높고, 또한 열수축률이 작은 비결정 탄소막을 얻을 수 있다. 따라서 이 비결정 탄소막을 반도체 장치를 구성하는 막으로서 이용한 경우에 막 박리 등의 결함을 억제할 수 있다.
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公开(公告)号：KR1020100003353A
公开(公告)日：2010-01-08
申请号：KR1020097023404
申请日：2008-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/768 , H01L21/28
CPC classification number: H01L21/31144 , C23C16/26 , H01L21/02074 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76808 , H01L21/76883 , Y10S438/951
Abstract: A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.
Abstract translation: 一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。
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公开(公告)号：KR101139546B1
公开(公告)日：2012-04-27
申请号：KR1020107001702
申请日：2008-07-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/314 , H01L21/768
CPC classification number: H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
Abstract: 본 발명에 따르면, 불화 절연막 및 상기 불화 절연막 상에 형성된 SiCN막을 포함하는 반도체 소자가 제공되고, 상기 SiCN막 내의 질소 밀도는 불화 절연막과 SiCN막 사이의 계면에서 멀어질수록 감소한다.
본 발명에 있어서, CF
x 막과의 계면 근처에서는 높은 내불소성(fluorine-resistance)을 갖고, 전체적으로는 낮은 유전율을 갖는 SiCN막이 하드 마스크로서 형성될 수 있다.-
公开(公告)号：KR1020090087466A
公开(公告)日：2009-08-17
申请号：KR1020097011467
申请日：2007-11-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/26 , H01L21/31 , H01L21/768 , H01L23/522
CPC classification number: H01L23/5329 , C23C16/26 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
Abstract: Provided are an amorphous carbon film having a high elasticity and a low thermal contraction ratio with a suppressed specific dielectric constant, a semiconductor device provided with the film and a technology for forming the amorphous carbon film. The amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation. Thus, the amorphous carbon film having a high elasticity and a low thermal contraction ratio with a suppressed specific dielectric constant of 3.3 or less is obtained. Therefore, troubles such as film peeling can be suppressed when the amorphous carbon film is used as a film that configures a semiconductor device. ® KIPO & WIPO 2009
Abstract translation: 提供具有高弹性和具有抑制的介电常数的低热收缩率的非晶碳膜，设置有该膜的半导体器件和用于形成无定形碳膜的技术。 无定形碳膜通过在成膜期间控制Si（硅）的添加量而形成。 因此，具有高的弹性和低的热收缩率，具有抑制的比介电常数为3.3以下的无定形碳膜。 因此，当将非晶碳膜用作构成半导体器件的膜时，可以抑制诸如膜剥离的问题。 ®KIPO＆WIPO 2009
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